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Zhichao Chen

Zhichao Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.opticsArtificial Intelligencecond-mat.stat-mechcond-mat.dis-nnInformation RetrievalMachine Learningphysics.class-ph

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Published work

11 published item(s)

preprint2026arXiv

DeepFilter: A Transformer-style Framework for Accurate and Efficient Process Monitoring

The process monitoring task is characterized by stringent demands for accuracy and efficiency. Current transformer-based methods, characterized by self-attention for temporal fusion, exhibit limitations in accurately understanding the semantic context and efficiently processing monitoring logs, rendering them inadequate for process monitoring. To address these limitations, we introduce DeepFilter, which revises the self-attention mechanism to improve both accuracy and efficiency. As a straightforward yet versatile approach, DeepFilter provides an instrumental baseline for practitioners in process monitoring, whether initiating new projects or enhancing existing capabilities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

ESCM$^2$: Entire Space Counterfactual Multi-Task Model for Post-Click Conversion Rate Estimation

Accurate estimation of post-click conversion rate is critical for building recommender systems, which has long been confronted with sample selection bias and data sparsity issues. Methods in the Entire Space Multi-task Model (ESMM) family leverage the sequential pattern of user actions, i.e. $impression\rightarrow click \rightarrow conversion$ to address data sparsity issue. However, they still fail to ensure the unbiasedness of CVR estimates. In this paper, we theoretically demonstrate that ESMM suffers from the following two problems: (1) Inherent Estimation Bias (IEB), where the estimated CVR of ESMM is inherently higher than the ground truth; (2) Potential Independence Priority (PIP) for CTCVR estimation, where there is a risk that the ESMM overlooks the causality from click to conversion. To this end, we devise a principled approach named Entire Space Counterfactual Multi-task Modelling (ESCM$^2$), which employs a counterfactual risk miminizer as a regularizer in ESMM to address both IEB and PIP issues simultaneously. Extensive experiments on offline datasets and online environments demonstrate that our proposed ESCM$^2$ can largely mitigate the inherent IEB and PIP issues and achieve better performance than baseline models.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Circular Polarization of Periodic Leaky-Wave Antennas with Axial Asymmetry: Theoretical Proof and Experimental Demonstration

The paper includes two contributions. First, it proves that the series and shunt radiation components, corresponding to longitudinal and transversal electric fields, respectively, are always in phase quadrature in axially asymmetric periodic leaky-wave antennas (LWAs), so that these antennas are inherently elliptically polarized. This fact is theoretically proven and experimentally illustrated by two case-study examples, a composite right/left-handed (CRLH) LWA and a series-fed patch (SFP) LWA. Second, it shows (for the case of the SFP LWA) that the axial ratio is controlled and minimized by the degree of axial asymmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP

The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kinetics than the conventional methods used with the reflection or transmission geometry of photoluminescence. Our method provides a tool for studying the effects of non-equilibrium distribution of minority carriers in doped direct-band semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP

We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization of the "Lévy flight" random walk of holes, in which the Lévy distribution index gamma is controlled by the temperature. We show that the variation γ(T) is close to that predicted earlier on the basis of the assumed quasi-equilibrium (van Roosbroek-Shockley) intrinsic emission spectrum, γ=1-Δ/kT, where Δ(T) is the Urbach tailing parameter of the absorption spectra. The decreasing γat lower temperatures results in a giant enhancement in the spread of holes -- over distances exceeding 1 cm from the region of photo-excitation.

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preprint2012arXiv

Direct observation of Levy flight of holes in bulk n-InP

We study the photoluminescence spectra excited at an edge side of n-InP slabs and observed from the broadside. In a moderately doped sample the intensity drops off as a power-law function of the distance from the excitation - up to several millimeters - with no change in the spectral shape.The hole distribution is described by a stationary Levy-flight process over more than two orders of magnitude in both the distance and hole concentration. For heavily-doped samples, the power law is truncated by free-carrier absorption. Our experiments are near-perfectly described by the Biberman-Holstein transport equation with parameters found from independent optical experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Photon assisted Levy flights of minority carriers in n-InP

We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to re-absorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off with distance from the excitation region. Such a behavior evidences an anomalous photon-assisted transport of minority carriers enhanced owing to the high quantum efficiency of emission. It is shown that the transport conforms very well to the so-called Levy-flights process corresponding to a peculiar random walk that does not reduce to diffusion. The index gamma of the Levy flights distribution is found to be in the range gamma = 0.64 to 0.79, depending on the doping. Thus, we propose the high-efficiency direct-gap semiconductors as a remarkable laboratory system for studying the anomalous transport.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing

We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is accompanied by increasing transmission. The spectral position of a minimum (almost zero) of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in the spectral range between 0.5 and 6 eV. The effect is explained by the formation of a uniform oxide layer, whose parameters (thicknesses and average index) are estimated by detailed modeling.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

Operation of semiconductor scintillators requires optically-tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown upon the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current, about 1 nA/cm2 at the reverse bias of 2 V. The low leakage makes possible a sensitive readout circuitry even though the diode has a large area (1 mm/times1 mm) and therefore large capacitance (50 pF). Results of electrical, optical and radiation testing of the diodes are presented. Detection of individual α-particles and γ-photons is demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Radiation efficiency of heavily doped bulk n-InP semiconductor

Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss-Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination but is strongly influenced by photon recycling. Temperature dependence of the decay time suggests Auger recombination as the dominant non-radiative process at room temperature. Radiative quantum efficiency has been evaluated at different doping levels and at 2x1018 cm-3 it is found to be as high as 97%, which makes n-InP suitable for scintillator application.

0 citations0 reviewsNo code linkedOpen access