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Arsen V. Subashiev

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cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.stat-mech physics.optics

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preprint2013arXiv

Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP

We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization of the "Lévy flight" random walk of holes, in which the Lévy distribution index gamma is controlled by the temperature. We show that the variation γ(T) is close to that predicted earlier on the basis of the assumed quasi-equilibrium (van Roosbroek-Shockley) intrinsic emission spectrum, γ=1-Δ/kT, where Δ(T) is the Urbach tailing parameter of the absorption spectra. The decreasing γat lower temperatures results in a giant enhancement in the spread of holes -- over distances exceeding 1 cm from the region of photo-excitation.

preprint2011arXiv

Photon assisted Levy flights of minority carriers in n-InP

We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to re-absorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off with distance from the excitation region. Such a behavior evidences an anomalous photon-assisted transport of minority carriers enhanced owing to the high quantum efficiency of emission. It is shown that the transport conforms very well to the so-called Levy-flights process corresponding to a peculiar random walk that does not reduce to diffusion. The index gamma of the Levy flights distribution is found to be in the range gamma = 0.64 to 0.79, depending on the doping. Thus, we propose the high-efficiency direct-gap semiconductors as a remarkable laboratory system for studying the anomalous transport.

preprint2011arXiv

Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing

We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is accompanied by increasing transmission. The spectral position of a minimum (almost zero) of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in the spectral range between 0.5 and 6 eV. The effect is explained by the formation of a uniform oxide layer, whose parameters (thicknesses and average index) are estimated by detailed modeling.

preprint2010arXiv

Urbach tail studies by luminescence filtering in moderately doped bulk InP

The shape of the photoluminescence line registered from a side edge of InP wafer is studied as function of the distance from the excitation spot. The observed red shift in the luminescence maximum is well described by radiation filtering and is consistent with the absorption spectra. Our method provides an independent and accurate determination of the Urbach tails in moderately doped semiconductors.