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Zhenhua Wu

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Published work

11 published item(s)

preprint2026arXiv

A Generalizable Framework for Building Executable Domain-Specific LLMs under Data Scarcity: Demonstration on Semiconductor TCAD Simulation

Scientific and engineering verticals often suffer from data scarcity and strict executability requirements: models must generate not only fluent text, but also syntactically valid, tool-compilable scripts. We present a schema-first alignment framework for building compact, executable domain-specific LLMs in low-resource settings. The framework integrates three core components: (i) large-scale synthetic QA data generation from expert documentation to instill foundational domain knowledge; (ii) a code-centric IR->DPO workflow that converts verified tool decks into interpretable intermediate representations (IR), performs equivalence-preserving diversification, and constructs preference pairs to directly optimize instruction compliance and code executability; and (iii) a controlled evaluation of Retrieval-Augmented Generation (RAG), showing that while RAG benefits general LLMs, it can marginally degrade the performance of already domain-aligned models. We demonstrate the framework by instantiating TcadGPT for semiconductor Technology Computer-Aided Design (TCAD). Using 1.5M synthetic QA pairs and an IR-driven DPO dataset, TcadGPT attains 85.6% semantic accuracy and an 80.0% syntax pass rate on SDE executability tests, substantially outperforming state-of-the-art general LLMs such as GPT-4o. To probe portability beyond TCAD, we apply the same recipe to the open-source FEM solver Elmer, observing consistent improvements in script-level success rates over general-purpose baselines. All datasets, benchmarks, and code (including P1, P2, and IR->DPO) are released for reproducibility. Together, these results suggest that the proposed framework provides a robust and reproducible path toward executable LLMs in specialized, data-scarce professional domains.

preprint2024arXiv

Nanofabrication beyond optical diffraction limit: Optical driven assembly enabled by superlubricity

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm$^2$, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis.

preprint2022arXiv

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.

preprint2020arXiv

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

In this study, a SPICE model for negative capacitance vertical nanowire field-effect-transistor (NC VNW-FET) based on BSIM-CMG model and Landau-Khalatnikov (LK) equation was presented. Suffering from the limitation of short gate length there is lack of controllable and integrative structures for high performance NC VNW-FETs. A new kind of structure was proposed for NC VNW-FETs at sub-3nm node. Moreover, in order to understand and improve NC VNW-FETs, the S-shaped polarization-voltage curve (S-curve) was divided into four regions and some new design rules were proposed. By using the SPICE model, device-circuit co-optimization was implemented. The co-design of gate work function (WF) and NC was investigated. A ring oscillator was simulated to analyze the circuit energy-delay, and it shown that significant energy reduction, up to 88%, at iso-delay for NC VNW-FETs at low supply voltage can be achieved. This study gives a credible method to analysis the performance of NC based devices and circuits and reveals the potential of NC VNW-FETs in low-power applications.

preprint2016arXiv

Electron tunneling through a single magnetic barrier in HgTe topological insulator

Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current can be transmitted from unpolarized states to totally spin polarized states. These features offer us and efficient way to control the topological edge state transport, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

preprint2016arXiv

Spin polarized Charge Trapping and Transfer at a HgTe Topological Insulator Quantum Dot

This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a Hall bar device and a topological quantum dot is created by adding split gate electrodes closely on the QW. In sharp contrast to conventional semiconductor quantum dots, the presence or absence of topological edge states in the proposed quantum hall bar system leads to distinct propagating/insulating state of the TICs with large on/off ratio. This topological quantum dot functions as a carrier trap memory element with near perfect program/erase efficiency by proper adjusting the voltages applied to the split gates. For completeness, we also demonstrate that the Rashba spin orbit interaction in the quantum dot does not destroy the topological edge states and have negligible impact on the conductance of the quantum hall bar. The rapid oscillations in conductance can be suppressed when applying a perpendicular magnetic field in the quantum dot.

preprint2012arXiv

Charge pumping in monolayer graphene driven by a series of time-periodic potentials

We applied the Floquet scattering-matrix formalism to studying the electronic transport properties in a mesoscopic Dirac system. Using the method, we investigate theoretically quantum pumping driven by a series of time-periodic potentials in graphene monolayer both in the adiabatic and non-adiabatic regimes. Our numerical results demonstrate that adding harmonic modulated potentials can break the time reversal symmetry when no voltage bias is applied to the graphene monolayer. Thus, when the system is pumped with proper dynamic parameters, these scatterers can produce a nonzero dc pumped current. We also find that the transmission is anisotropic as the incident angle is changed.

preprint2011arXiv

Electronic fibre in graphene

We investigate theoretically the transmission properties through a p-n-p junction on graphene. Here we show that the electronic transport property presents deep analogies with light propagation. It originates from the similarity between the linear spectrum of the Dirac fermions and photons that obey the Maxwell's equations. We demonstrate the p-n-p channel acts as a electronic fiber in which electrons propagate along the channel without dissipation.

preprint2011arXiv

Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene

We demonstrate theoretically how local strains in graphene can be tailored to generate a valley polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different Brewster-like angles and Goos-Hänchen shifts, exhibiting a close analogy with light propagating behavior. In a strain-induced waveguide, electrons in K and K' valleys have different group velocities, which can be used to construct a valley filter in graphene without the need for any external fields.

preprint2006arXiv

Transport of multiple users in complex networks

We study the transport properties of model networks such as scale-free and Erdős-Rényi networks as well as a real network. We consider the conductance $G$ between two arbitrarily chosen nodes where each link has the same unit resistance. Our theoretical analysis for scale-free networks predicts a broad range of values of $G$, with a power-law tail distribution $Φ_{\rm SF}(G)\sim G^{-g_G}$, where $g_G=2λ-1$, and $λ$ is the decay exponent for the scale-free network degree distribution. We confirm our predictions by large scale simulations. The power-law tail in $Φ_{\rm SF}(G)$ leads to large values of $G$, thereby significantly improving the transport in scale-free networks, compared to Erdős-Rényi networks where the tail of the conductivity distribution decays exponentially. We develop a simple physical picture of the transport to account for the results. We study another model for transport, the \emph{max-flow} model, where conductance is defined as the number of link-independent paths between the two nodes, and find that a similar picture holds. The effects of distance on the value of conductance are considered for both models, and some differences emerge. We then extend our study to the case of multiple sources, where the transport is define between two \emph{groups} of nodes. We find a fundamental difference between the two forms of flow when considering the quality of the transport with respect to the number of sources, and find an optimal number of sources, or users, for the max-flow case. A qualitative (and partially quantitative) explanation is also given.

preprint2005arXiv

Current Flow in Random Resistor Networks: The Role of Percolation in Weak and Strong Disorder

We study the current flow paths between two edges in a random resistor network on a $L\times L$ square lattice. Each resistor has resistance $e^{ax}$, where $x$ is a uniformly-distributed random variable and $a$ controls the broadness of the distribution. We find (a) the scaled variable $u\equiv L/a^ν$, where $ν$ is the percolation connectedness exponent, fully determines the distribution of the current path length $\ell$ for all values of $u$. For $u\gg 1$, the behavior corresponds to the weak disorder limit and $\ell$ scales as $\ell\sim L$, while for $u\ll 1$, the behavior corresponds to the strong disorder limit with $\ell\sim L^{d_{\scriptsize opt}}$, where $d_{\scriptsize opt} = 1.22\pm0.01$ is the optimal path exponent. (b) In the weak disorder regime, there is a length scale $ξ\sim a^ν$, below which strong disorder and critical percolation characterize the current path.