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Kai Chang

Kai Chang contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2026arXiv

A Generalizable Framework for Building Executable Domain-Specific LLMs under Data Scarcity: Demonstration on Semiconductor TCAD Simulation

Scientific and engineering verticals often suffer from data scarcity and strict executability requirements: models must generate not only fluent text, but also syntactically valid, tool-compilable scripts. We present a schema-first alignment framework for building compact, executable domain-specific LLMs in low-resource settings. The framework integrates three core components: (i) large-scale synthetic QA data generation from expert documentation to instill foundational domain knowledge; (ii) a code-centric IR->DPO workflow that converts verified tool decks into interpretable intermediate representations (IR), performs equivalence-preserving diversification, and constructs preference pairs to directly optimize instruction compliance and code executability; and (iii) a controlled evaluation of Retrieval-Augmented Generation (RAG), showing that while RAG benefits general LLMs, it can marginally degrade the performance of already domain-aligned models. We demonstrate the framework by instantiating TcadGPT for semiconductor Technology Computer-Aided Design (TCAD). Using 1.5M synthetic QA pairs and an IR-driven DPO dataset, TcadGPT attains 85.6% semantic accuracy and an 80.0% syntax pass rate on SDE executability tests, substantially outperforming state-of-the-art general LLMs such as GPT-4o. To probe portability beyond TCAD, we apply the same recipe to the open-source FEM solver Elmer, observing consistent improvements in script-level success rates over general-purpose baselines. All datasets, benchmarks, and code (including P1, P2, and IR->DPO) are released for reproducibility. Together, these results suggest that the proposed framework provides a robust and reproducible path toward executable LLMs in specialized, data-scarce professional domains.

preprint2022arXiv

Higher-order Topological Phases of Magnons in van der Waals Honeycomb Ferromagnets

We theoretically propose a second-order topological magnon insulator by stacking the van der Waals honeycomb ferromagnets with antiferromagnetic interlayer coupling. The system exhibits Z$_{2}$ topological phase, protected by pseudo-time-reversal symmetry (PTRS). An easy-plane anisotropy term breaks PTRS and destroys the topological phase. Nevertheless, it respects a magnetic two-fold rotational symmetry which protects a second-order topological phase with corner modes in bilayer and hinge modes along stacking direction. Moreover, an introduced staggered interlayer coupling establishes a Z$_{2}$$\times$Z topology, giving rise to gapped topological surface modes carrying non-zero Chern numbers. Consequently, chiral hinge modes propagate along the horizontal hinges in a cuboid geometry and are robust against disorders. Our work bridges the higher-order topology and magnons in van der Waals platforms, and could be used for constructing topological magnonic devices.

preprint2022arXiv

Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic theory, we find out the exact geometric transformation in this model that determines the positions of diffraction spots. The program can deal with many forms of surface structures, including surface reconstructions or domains. The simulations exhibit great agreement with the experimental results in various cases. This program will benefit the structure analysis in thin film growth and surface science studies.

preprint2020arXiv

Direct observation of handedness-dependent quasiparticle interference in the two enantiomers of topological chiral semimetal PdGa

It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.

preprint2020arXiv

Experimental formation of monolayer group-IV monochalcogenides

Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-developing field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.

preprint2020arXiv

Giant Flexoelectricity in Bent Silicon Thinfilms

We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained flexoelectric coefficients compare well with the typical experimental values as reported in various ceramics. Our results shed light on elucidating the discrepancy between theory and experiment,and pave a new way to discover excellent flexoelectric performance in conventional materials.

preprint2020arXiv

Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene, and the demonstration of controlled room temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.

preprint2020arXiv

Spin-Triplet Excitonic Insulator: The Case of Graphone

While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detecting excitonic insulators is still a daunting challenge, the condensation of triplet excitons will result in spin superfluidity, which can be directly measured by a transport experiment. Nonlocal dielectric screening also leads to an unexpected phenomenon, namely, an indirect-to-direct transition crossover between single-particle band and exciton dispersion in graphone, which offers yet another test by experiment.

preprint2019arXiv

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.