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Zhenhua Ni

Zhenhua Ni appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.opticscond-mat.str-elnlin.PSphysics.chem-phphysics.ins-det

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Published work

20 published item(s)

preprint2016arXiv

High-performance graphene photodetector by interfacial gating

Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for achieving ultra-high sensitivity is sacrificing the response time. Detecting weak signal within short response time is crucial especially in applications such as optical positioning, remote sensing, and biomedical imaging. In this work, we bridge the gap between ultra-fast response and ultra-high sensitivity by employing a graphene/SiO2/lightly-doped-Si architecture with revolutionary interfacial gating mechanism. Such device is capable to detect < 1 nW signal (with responsivity of ~1000 A W-1) and the spectral response extends from visible to near-infrared. More importantly, the photoresponse time of our device has been pushed to ~400 ns. The current device structure does not need complicated fabrication process and is fully compatible with the silicon technology. This work will not only open up a route to graphene-based high performance optoelectronic devices, but also have great potential in ultra-fast weak signal detection.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spectroscopic investigation of defects in two dimensional materials

Two-dimensional (2D) materials have been extensively studied in recent years due to their unique properties and great potential for applications. Different types of structural defects could present in 2D materials and have strong influence on their properties. Optical spectroscopic techniques, e.g. Raman and photoluminescence (PL) spectroscopy, have been widely used for defect characterization in 2D materials. In this review, we briefly introduce different types of defects and discuss their effects on the mechanical, electrical, optical, thermal, and magnetic properties of 2D materials. Then, we review the recent progress on Raman and PL spectroscopic investigation of defects in 2D materials, i.e. identifying of the nature of defects and also quantifying the numbers of defects. Finally, we highlight perspectives on defect characterization and engineering in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Synthesis, Optical, and Magnetic Properties of Ba$_2$Ni$_3$F$_{10}$ Nanowires

A low temperature hydrothermal route has been developed, and pure phase Ba$_2$Ni$_3$F$_{10}$ nanowires have been successfully prepared under the optimized conditions. Under the 325 nm excitation, the Ba$_2$Ni$_3$F$_{10}$ nanowires exhibit three emission bands with peak positions locating at 360 nm, 530 nm, and 700 nm, respectively. Combined with the first-principles calculations, the photoluminescence property can be explained by the electron transitions between the t2g and eg orbitals. Clear hysteresis loops observed below the temperature of 60 K demonstrates the weak ferromagnetism in Ba$_2$Ni$_3$F$_{10}$ nanowires, which has been attributed to the surface strain of nanowires. Exchange bias with blocking temperature of 55 K has been observed, which originates from the magnetization pinning under the cooling field due to antiferromagnetic core/weak ferromagnetic shell structure of Ba2Ni3F10 nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A van der Waals pn heterojunction with organic/inorganic semiconductors

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

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preprint2015arXiv

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry.

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preprint2015arXiv

Strong room-temperature blue-violet photoluminescence of multiferroic BaMnF$_4$

BaMnF$_4$ microsheets have been prepared by hydrothermal method. Strong room-temperature blue-violet photoluminescence has been observed (absolute luminescence quantum yield 67%), with two peaks located at 385 nm and 410 nm, respectively. More interestingly, photon self-absorption phenomenon has been observed, leading to unusual abrupt drop of luminescence intensity at wavelength of 400 nm. To understand the underlying mechanism of such emitting, the electronic structure of BaMnF$_4$ has been studied by first principles calculations. The observed two peaks are attributed to electrons' transitions between the upper-Hubbard bands of Mn's $t_{2g}$ orbitals and the lower-Hubbard bands of Mn's $e_g$ orbitals. Those Mott gap mediated d-d orbital transitions may provide additional degrees of freedom to tune the photon generation and absorption in ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

There have been continuous efforts to seek for novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and the following Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast combined with atomic force microscope (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows monotonic discrete increase with the decrease of phosphorene thickness down to monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor efficiently. This work for monolayer phosphorene fabrication and thickness determination will facilitates the research of phosphorene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high temperature vacuum annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors

Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10cm2V-1s-1 and aggressively scaled saturation voltage around 1V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Plasmons in graphene: Recent progress and applications

Owing to its excellent electrical, mechanical, thermal and optical properties, graphene has attracted great interests since it was successfully exfoliated in 2004. Its two dimensional nature and superior properties meet the need of surface plasmons and greatly enrich the field of plasmonics. Recent progress and applications of graphene plasmonics will be reviewed, including the theoretical mechanisms, experimental observations, and meaningful applications. With relatively low loss, high confinement, flexible feature, and good tunability, graphene can be a promising plasmonic material alternative to the noble metals. Optics transformation, plasmonic metamaterials, light harvesting etc. are realized in graphene based devices, which are useful for applications in electronics, optics, energy storage, THz technology and so on. Moreover, the fine biocompatibility of graphene makes it a very well candidate for applications in biotechnology and medical science.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electronic Structure and Structural Evolutions of Hydrogenated Graphene Probed by Raman Spectroscopy

The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G modes (ID/IG) is revealed and further developed as a quick method for estimation of inter-defect distance and defect density in hydrogenated graphene. At low hydrogen coverage, the chemisorbed H atoms behave like defects in sp2 C=C matrix; while for a high hydrogen coverage, the sp3 C-H bonds become coalescent clusters, resulting in confinement effect on the sp2 C domains. Electronic structure changes caused by varying hydrogen coverage are evidenced by excitation energy dependent red shift of D and 2D bands. Our results provide a useful guide for developing applications of hydrogenated graphene, as well as using Raman spectroscopy as quick metrology of the defect density in further exploring other kinds of graphene derivatives.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

FeCl3 based Few-Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping

Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient method to modify the electronic properties of few layer graphene (FLG). FeCl3 intercalated FLG were successfully prepared by two-zone vapor transport method. This is the first report on full intercalation for graphene samples. The features of the Raman G peak of such few-layer graphene intercalation compounds (FLGIC) are in good agreement with their full intercalation structures. The FLGIC presents single Lorentzian 2D peak, similar to that of single layer graphene, indicating the loss of electronic coupling between adjacent graphene layers. First principle calculations further reveal that the band structure of FLGIC is similar to single layer graphene but with strong doping effect due to the charge transfer from graphene to FeCl3. The successful fabrication of FLGIC opens a new way to modify properties of FLG for fundamental studies and future applications.

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preprint2010arXiv

Gold on graphene as a substrate for surface enhanced Raman scattering study

In this paper, we report our study on gold (Au) films with different thicknesses deposited on single layer graphene (SLG) as surface enhanced Raman scattering (SERS) substrates for the characterization of rhodamine (R6G) molecules. We find that an Au film with a thickness of ~7 nm deposited on SLG is an ideal substrate for SERS, giving the strongest Raman signals for the molecules and the weakest photoluminescence (PL) background. While Au films effectively enhance both the Raman and PL signals of molecules, SLG effectively quenches the PL signals from the Au film and molecules. The former is due to the electromagnetic mechanism involved while the latter is due to the strong resonance energy transfer from Au to SLG. Hence, the combination of Au films and SLG can be widely used in the characterization of low concentration molecules with relatively weak Raman signals.

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preprint2010arXiv

Monolayer Graphene as Saturable Absorber in Mode-locked Laser

We demonstrate that the intrinsic properties of monolayer graphene allow it to act as a more effective saturable absorber for mode-locking fiber lasers compared to multilayer graphene. The absorption of monolayer graphene can be saturated at lower excitation intensity compared to multilayer graphene, graphene with wrinkle-like defects, and functionalized graphene. Monolayer graphene has a remarkable large modulation depth of 95.3%, whereas the modulation depth of multilayer graphene is greatly reduced due to nonsaturable absorption and scattering loss. Picoseconds ultrafast laser pulse (1.23 ps) can be generated using monolayer graphene as saturable absorber. Due to the ultrafast relaxation time, larger modulation depth and lower scattering loss of monolayer graphene, it performs better than multilayer graphene in terms of pulse shaping ability, pulse stability and output energy.

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preprint2010arXiv

Stacking Dependent Optical Conductivity of Bilayer Graphene

The optical conductivities of graphene layers are strongly dependent on their stacking orders. Our first-principle calculations show that while the optical conductivities of single layer graphene (SLG) and bilayer graphene (BLG) with Bernal stacking are almost frequency independent in the visible region, the optical conductivity of twisted bilayer graphene (TBG) is frequency dependent, giving rise to additional absorption features due to the band folding effect. Experimentally, we obtain from contrast spectra the optical conductivity profiles of BLG with different stacking geometries. Some TBG samples show additional features in their conductivity spectra in full agreement with our calculation results, while a few samples give universal conductivity values similar to that of SLG. We propose those variations of optical conductivity spectra of TBG samples originate from the difference between the commensurate and incommensurate stackings. Our results reveal that the optical conductivity measurements of graphene layers indeed provide an efficient way to select graphene films with desirable electronic and optical properties, which would great help the future application of those large scale misoriented graphene films in photonic devices.

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preprint2010arXiv

Ultrafast carrier dynamics in pristine and FeCl3-intercalated bilayer graphene

Ultrafast carrier dynamics of pristine bilayer graphene (BLG) and bilayer graphene intercalated with FeCl3 (FeCl3-G), were studied using time-resolved transient differential reflection (delta R/R). Compared to BLG, the FeCl3-G data showed an opposite sign of delta R/R, a slower rise time, and a single (instead of double) exponential relaxation. We attribute these differences in dynamics to the down-shifting of the Fermi level in FeCl3-G, as well as the formation of numerous horizontal bands arising from the d-orbitals of Fe. Our work shows that intercalation can dramatically change the electronic structure of graphene, and its associated carrier dynamics.

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preprint2009arXiv

Comment on "Raman spectra of misoriented bilayer graphene"

In a recent paper [Phys. Rev. B 78, 113407 (2008)], Poncharal et al. studied the Raman spectra of misoriented bilayer graphene. They found that the blueshift of 2D band of misoriented graphene relative to that of single layer graphene shows a strong dependence on the excitation laser energy. The blueshift increases with decreasing excitation energy. This finding contradicts our explanation of reduction of Fermi velocity of folded/misoriented graphene [Ni et al. Phys. Rev. B 77, 235403 (2008)]. In this comment, we present more experimental results from our group as well as from others to show that the blueshift is indeed only weakly dependent on excitation energy. We therefore suggest that our explanation of 2D blushift of folded graphene due to reduction of Fermi velocity is still valid.

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preprint2009arXiv

G band Raman double resonance in twisted bilayer graphene: an evidence of band splitting and folding

The stacking faults (deviates from Bernal) will break the translational symmetry of multilayer graphenes and modify their electronic and optical behaviors to the extent depending on the interlayer coupling strength. This paper addresses the stacking-induced band splitting and folding effect on the electronic band structure of twisted bilayer graphene. Based on the first-principles density functional theory study, we predict that the band folding effect of graphene layers may enable the G band Raman double resonance in the visible excitation range. Such prediction is confirmed experimentally with our Raman observation that the resonant energies of the resonant G mode are strongly dependent on the stacking geometry of graphene layers.

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