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Zhengguang Lu

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.optics

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11 publications

preprint2026arXiv

Magnetic Field-Enhanced Graphene Superconductivity with Record Pauli-Limit Violation

Spin-polarized superconductors offer a rare platform for studying electronic correlations, but few candidate systems have been experimentally confirmed to date. Here, we report the observation of a spin-polarized superconducting state, denoted SC5, in WSe2-proximitized rhombohedral trilayer graphene. At in-plane magnetic field B|| = 0 T, SC5 has a critical temperature of 68 mK and an out-of-plane critical magnetic field of only 12 mT. Surprisingly, these values are significantly enhanced as B|| increases, and the superconductivity persists to B|| = 8.8 T. This value corresponds to a record-high Pauli-limit violation ratio of at least 80 among all superconductors, while the true critical field is beyond the limit of our instrument. We conclude that SC5 experiences a canting crossover from Ising-type to spin-polarized superconductor with increased B||.

Open access
preprint2022arXiv

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

Open access
preprint2022arXiv

Magnetic field tuning of crystal field levels and vibronic states in Spin-ice Ho2_2Ti2_2O7_7 observed in far-infrared reflectometry

Low temperature optical spectroscopy in applied magnetic fields provides clear evidence of magnetoelastic coupling in the spin ice material Ho2_2Ti2_2O7_7. In far-IR reflectometry measurements, we observe field dependent features around 30, 61, 72 and 78~meV, energies corresponding to crystal electronic field (CEF) doublets. The calculations of the crystal-field Hamiltonian model confirm that the observed features in IR spectra are consistent with magnetic-dipole-allowed excitations from the ground state to higher 5^5I8_8 CEF levels. We present the CEF parameters that best describe our field-dependent IR reflectivity measurements. Additionally, we identify a weak field-dependent shoulder near one of the CEF doublets. This indicates that this level is split even in zero-field, which we associate with a vibronic bound state. Modeling of the observed splitting shows that the phonon resides at slightly lower energy compared to the CEF level that it couples to, which is in contrast with previously published inelastic neutron measurements. The magnetic field dependence of the vibronic state shows a gradual decoupling of the phonon with the CEF level as it shifts. This approach should work in pyrochlores and other systems that have magnetic dipole transitions in the IR spectroscopic range, which can elucidate the presence and the ability to tune the nature of vibronic states in a wide variety of materials.

Open access
preprint2020arXiv

Gate-tunable exciton-polaron Rydberg series with strong roton effect

The electronic exciton polaron is a hypothetical many-body quasiparticle formed by an exciton dressed with a polarized electron-hole cloud in the Fermi sea (FS). It is predicted to display rich many-body physics and unusual roton-like dispersion. Exciton polarons were recently evoked to explain the excitonic spectra of doped monolayer transition metal dichalcogenides (TMDs), but these studies are limited to the ground state. Excited-state exciton polarons can exhibit richer many-body physics due to their larger spatial extent, but detection is challenging due to their inherently weak signals. Here we observe gate-tunable exciton polarons for the 1s - 3s excitonic Rydberg series in ultraclean monolayer MoSe2_2 devices by optical spectroscopy. When the FS expands, we observe increasingly severe suppression and steep energy shift from low to high Rydberg states. Their gate-dependent energy shifts go beyond the trion description but match our exciton-polaron theory. Notably, the exciton-polaron absorption and emission bands are separated with an energy gap, which increases from ground to excited state. Such peculiar characteristics are attributed to the roton-like exciton-polaron dispersion, where energy minima occur at finite momenta. The roton effect increases from ground to excited state. Such exciton-polaron Rydberg series with progressively significant many-body and roton effect shall provide a new platform to explore complex many-body phenomena.

Open access
preprint2020arXiv

Symmetry-resolved two-magnon excitations in a strong spin-orbit-coupled bilayer antiferromagnet

We used a combination of polarized Raman spectroscopy and spin wave calculations to study magnetic excitations in the strong spin-orbit-coupled (SOC) bilayer perovskite antiferromagnet Sr3Ir2O7Sr_3Ir_2O_7. We observed two broad Raman features at ~ 800 cm−1cm^{-1} and ~ 1400 cm−1cm^{-1} arising from magnetic excitations. Unconventionally, the ~ 800 cm−1cm^{-1} feature is fully symmetric (A1gA_{1g}) with respect to the underlying tetragonal (D4hD_{4h}) crystal lattice which, together with its broad line shape, definitively rules out the possibility of a single magnon excitation as its origin. In contrast, the ~ 1400 cm−1cm^{-1} feature shows up in both the A1gA_{1g} and B2gB_{2g} channels. From spin wave and two-magnon scattering cross-section calculations of a tetragonal bilayer antiferromagnet, we identified the ~ 800 cm−1cm^{-1} (~ 1400 cm−1cm^{-1}) feature as two-magnon excitations with pairs of magnons from the zone-center ΓΓ point (zone-boundary van Hove singularity X point). We further found that this zone-center two-magnon scattering is unique to bilayer perovskite magnets which host an optical branch in addition to the acoustic branch, as compared to their single layer counterparts. This zone-center two-magnon mode is distinct in symmetry from the time-reversal symmetry broken spin wave gap and phase mode proposed to explain the ~ 92 meV (742 cm−1cm^{-1}) gap in RIXS magnetic excitation spectra of Sr3Ir2O7Sr_3Ir_2O_7.

Open access
preprint2019arXiv

Exciton valley depolarization in monolayer transition-metal dichalcogenides

The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin) quantum number of photoexcited electrons and holes. Also similar to the quantum-mechanical spin, the valley quantum number is not a conserved quantity. Valley depolarization of excitons in monolayer transition-metal dichalcogenides due to long-range electron-hole exchange typically takes a few ps at low temperatures. Exceptions to this behavior are monolayers MoSe2_2 and MoTe2_2 wherein the depolarization is much faster. We elucidate the enigmatic anomaly of these materials, finding that it originates from Rashba-induced coupling of the dark and bright exciton branches next to their degeneracy point. When photoexcited excitons scatter during their energy relaxation between states next to the degeneracy region, they reach the light cone after losing the initial helicity. The valley depolarization is not as fast in monolayers WSe2_2, WS2_2 and likely MoS2_2 wherein the Rashba-induced coupling is negligible.

Open access
preprint2019arXiv

Giant Valley-Zeeman Splitting from Spin-Singlet and Spin-Triplet Interlayer Excitons in WSe2/MoSe2 Heterostructure

Transition metal dichalcogenides (TMDCs) heterostructure with a type II alignment hosts unique interlayer excitons with the possibility of spin-triplet and spin-singlet states. However, the associated spectroscopy signatures remain elusive, strongly hindering the understanding of the Moire potential modulation of the interlayer exciton. In this work, we unambiguously identify the spin-singlet and spin-triplet interlayer excitons in the WSe2/MoSe2 hetero-bilayer with a 60-degree twist angle through the gate- and magnetic field-dependent photoluminescence spectroscopy. Both the singlet and triplet interlayer excitons show giant valley-Zeeman splitting between the K and K' valleys, a result of the large Lande g-factor of the singlet interlayer exciton and triplet interlayer exciton, which are experimentally determined to be ~ 10.7 and ~ 15.2, respectively, in good agreement with theoretical expectation. The PL from the singlet and triplet interlayer excitons show opposite helicities, determined by the atomic registry. Helicity-resolved photoluminescence excitation (PLE) spectroscopy study shows that both singlet and triplet interlayer excitons are highly valley-polarized at the resonant excitation, with the valley polarization of the singlet interlayer exciton approaches unity at ~ 20 K. The highly valley-polarized singlet and triplet interlayer excitons with giant valley-Zeeman splitting inspire future applications in spintronics and valleytronics.

Open access
preprint2019arXiv

Melting of charge order in the low-temperature state of an electronic ferroelectric

Strong electronic interactions can drive a system into a state with a symmetry breaking. Lattice frustration or competing interactions tend to prevent a symmetry breaking, leading to quantum disordered phases. In spin systems frustration can produce a spin liquid state. Frustration of a charge degree of freedom also can result in various exotic states, however, experimental data on these effects is scarce. In this work we demonstrate how a charge ordered ferroelectric looses the order on cooling to low temperatures using an example of a Mott insulator on a weakly anisotropic triangular lattice κκ-(BEDT-TTF)2_2Hg(SCN)2_2Cl. Typically, a low temperature ordered state is a ground state of a system, and the demonstrated re-entrant behavior is unique. Raman scattering spectroscopy finds that this material enters an insulating ferroelectric `dipole solid' state at T=30 KT=30~K, but below T=15 KT=15~K the order melts, while preserving the insulating energy gap. The resulting phase diagram is relevant to other quantum paraelectric materials.

Open access
preprint2015arXiv

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe2_2 Transistors

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe2_2 crystals mechanically exfoliated onto SiO2_2. We find that tri-layered WSe2_2 field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm2^2/Vs at room temperature (saturating at a value of ~500 cm2^2/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 102^2 W/m2^2. Under a fixed wavelength of λλ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe2_2 photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.

Open access
preprint2015arXiv

Metal to insulator quantum-phase transition in few-layered ReS2_2

In ReS2_2 a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2_2 crystallizes in the 1T′^{\prime}-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2_2 field-effect transistors. We find that ReS2_2 exfoliated on SiO2_2 behaves as an nn-type semiconductor with an intrinsic carrier mobility surpassing μiμ_i ~30 cm2^2/Vs at T=300T = 300 K which increases up to ~350 cm2^2/Vs at 2 K. Semiconducting behavior is observed at low electron densities nn, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic T2T^2-dependence. This indicates that the band structure of 1T′^{\prime}-ReS2_2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of TT and nn, we find that the metallic state of ReS2_2 results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

Open access
preprint2015arXiv

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe2_2 field-effect transistors

Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe2_2 field-effect transistors whose sense of current rectification is controllable through a gate voltage. We argue, through numerical simulations, that this behavior results from the difference in the size of the Schottky barriers between drain and source metal contacts. Each barrier can be modeled as a Schottky diode but with opposite senses of current rectification between them, with the diode response resulting from the light induced promotion of photo-generated carriers across the smaller barrier. The back gate voltage controls the sense of current rectification by modulating the relative amplitude between them. This effect, which gives rise to a novel type of optoelectronic switch, also yields a photovoltaic response. Hence, it could provide an alternative to PN-junctions when harvesting photovoltaic currents from transition metal dichalcogenides. We argue that the photovoltaic efficiency associated to this effect could be increased by just increasing the relative asymmetry between both Schottky barriers. We also suggest that this new electro-optical effect has potential for technological applications.

Open access

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