BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Daniel Rhodes

Daniel Rhodes appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

Catalog footprint

What is connected

14works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

14 published item(s)

preprint2022arXiv

A new flavor of correlation and superconductivity in small twist-angle trilayer graphene

When layers of graphene are rotationally misaligned by the magic angle, the moiré superlattice features extremely flat bands. Due to the enhanced density of states, the Coulomb interaction induces a variety of instabilities. The most prominent occur at integer filling and are therefore commonly attributed to spontaneous polarization of the moiré unit cell's `flavor' degrees of freedom -- spin, valley, and the flat-band degeneracy. As the dominant member of the hierarchy, these correlated states are thought to crucially determine further instabilities at lower energy scales, such as superconductivity and weaker incompressible states at fractional filling. In this work, we examine the behavior of twisted trilayer graphene in a window of twist angle around $1.3^{\circ}$, well below the expected magic angle of $1.55^{\circ}$. In this small twist angle regime, we find surprisingly narrow bands, which are populated with both an abundance of correlation-driven states at fractional filling as well as robust superconductivity. The absence of linear-in-$T$ resistivity without significant reduction of the superconducting transition temperature, provides insights into the origin of both phenomena. Most remarkably, the hierarchy between integer and fractional filling is absent, indicating that flavor polarization does not play a governing role. The prominence of fractional filling in the small twist angle regime also points towards a longer-range effective Coulomb interaction. Combined, our results shed new light on outstanding questions in the field, while establishing the small twist angle regime as a new paradigm for exploring novel flavors of moiré physics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene

In a strongly correlated system, collective excitations contain key information regarding the electronic order of the underlying ground state. An abundance of collective modes in the spin and valley isospin channels of magic-angle graphene moiré bands has been alluded to by a series of recent experiments. However, direct observation of collective excitations has remained elusive due to the lack of a spin probe. In this work, we use a resistively-detected electron spin resonance technique to look for low-energy collective excitations in magic-angle twisted bilayer graphene. We report direct observation of collective modes in the form of microwave-induced resonance near half filling of the moiré flatbands. The frequency-magnetic field dependence of these resonance modes sheds light onto the nature of intervalley spin coupling, allowing us to extract parameters such as intervalley exchange interaction and spin stiffness. Two independent observations testify that the generation and detection of the microwave resonance relies on the strong correlation within the flat moiré energy band. First, the onset of robust resonance response coincides with the spontaneous flavor polarization at half moiré filling, and remains absent in the density range where the underlying Fermi surface is isospin unpolarized. Second, we performed the same resonance measurement on graphene monolayer and bilayer samples, including twisted bilayer with a large twist angle, where flatband physics is absent. We observe no indication of resonance response in these samples across a large range of carrier density, microwave frequency and power. A natural explanation is that the resonance response near the magic angle originates from "Dirac revivals" and the resulting isospin order.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Bilayer WSe$_2$ as a natural platform for interlayer exciton condensates in the strong coupling limit

Exciton condensates (EC) are macroscopic coherent states arising from condensation of electron-hole pairs. Bilayer heterostructures, consisting of two-dimensional electron and hole layers separated by a tunnel barrier, provide a versatile platform to realize and study EC. The tunnel barrier suppresses recombination yielding long-lived excitons. However, this separation also reduces interlayer Coulomb interactions, limiting the exciton binding strength. Here, we report the observation of EC in naturally occurring 2H-stacked bilayer WSe$_2$. In this system, the intrinsic spin-valley structure suppresses interlayer tunneling even when the separation is reduced to the atomic limit, providing access to a previously unattainable regime of strong interlayer coupling. Using capacitance spectroscopy, we investigate magneto-EC, formed when partially filled Landau levels (LL) couple between the layers. We find that the strong-coupling EC show dramatically different behaviour compared with previous reports, including an unanticipated variation of the EC robustness with the orbital number, and find evidence for a transition between two types of low-energy charged excitations. Our results provide a demonstration of tuning EC properties by varying the constituent single-particle wavefunctions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture

Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer $T_d$-WTe$_2$, have been reported to show superconductivity at temperatures near 1 K. Here we report superconductivity in semimetallic monolayer $T_d$-MoTe$_2$. The critical temperature $T_\textrm{c}$ reaches 8 K, a sixty-fold enhancement as compared to the bulk. This anomalous increase in $T_\textrm{c}$ is only observed in monolayers, and may be indicative of electronically mediated pairing. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage, revealing a superconducting dome that extends across both hole and electron pockets. The temperature dependence of the in-plane upper critical field is distinct from that of $2H$ transition metal dichalcogenides (TMDs), consistent with a tilted spin texture as predicted by \textit{ab initio} theory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Moiré metrology of energy landscapes in van der Waals heterostructures

The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical Measurement of Pseudo-Spin Texture of the Exciton Fine-Structure in Monolayer WSe2 within the Light Cone

Several theoretical predictions have claimed that the neutral exciton of TMDCs splits into a transversal and longitudinal exciton branch, with the longitudinal one, which is the upper branch, exhibiting an extraordinary strong dispersion in the meV range within the light cone. Historically, this was linked for semiconductor quantum wells to strong far-field optical dipole coupling, or strong electronic long-range exchange interactions, describing two sides of the same coin. Recently, experiments utilizing Fourier-space spectroscopy have shown that the exciton (exciton-polariton) dispersion can indeed be measured for high-quality hexagonal-BN-encapsulated WSe2 monolayer samples and can confirm the energy scale. Here, the exciton fine-structure's pseudo-spin and the valley polarization are investigated as a function of the centre-of-mass-momentum and excitation-laser detuning. For quasi-resonant excitation, a strong dispersion featuring a pronounced momentum-dependent helicity is observed. By increasing the excitation energy step-wise towards and then above the electronic band gap, the dispersion and the helicity systematically decrease due to contributions of incoherent excitons and emission from plasma. The decline of the helicity with centre-of-mass momentum can be phenomenologically modelled by the Maialle-Silva-Sham mechanism using the exciton splitting as the source of an effective magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhanced nonlinear interaction of polaritons via excitonic Rydberg states in monolayer WSe2

Strong optical nonlinearities play a central role in realizing quantum photonic technologies. In solid state systems, exciton-polaritons, which result from the hybridization of material excitations and cavity photons, are an attractive candidate to realize such nonlinearities. Here, the interaction between excitons forms the basis of the polaritonic nonlinearity. While the interaction between ground state excitons generates a notable optical nonlinearity, the strength of such ground state interactions is generally not sufficient to reach the regime of quantum nonlinear optics and strong single-polariton interactions. Excited states, however, feature enhanced interactions and therefore hold promise for accessing the quantum domain of single-photon nonlinearities, as demonstrated with high-lying Rydberg states of cold atomic systems. Excitons in excited states have recently been observed in monolayer transition metal dichalcogenides. Here we demonstrate the formation of exciton-polaritons using the first excited excitonic state in monolayer tungsten diselenide (WSe2) embedded in a microcavity. Owing to the larger exciton size compared to their ground state counterpart, the realized polaritons exhibit an enhanced nonlinear response by more than an order of magnitude, as evidenced through a modification of the cavity Rabi splitting. The demonstration of excited exciton-polaritons in two-dimensional semiconductors and their enhanced nonlinear response presents the first step towards the generation of strong photon interactions in solid state systems, a necessary building block for quantum photonic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ~85 A/W and ~20000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1-2x10^13 /cm^2/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $λ$ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe$_2$ photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Metal to insulator quantum-phase transition in few-layered ReS$_2$

In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS$_2$ field-effect transistors. We find that ReS$_2$ exfoliated on SiO$_2$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $μ_i$ ~30 cm$^2$/Vs at $T = 300$ K which increases up to ~350 cm$^2$/Vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic $T^2$-dependence. This indicates that the band structure of 1T$^{\prime}$-ReS$_2$ is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T$ and $n$, we find that the metallic state of ReS$_2$ results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Non-stoichiometry and Defects in the Weyl Semimetals TaAs, TaP, NbP, and NbAs

We report a structural study of the Weyl semimetals TaAs, TaP, NbP, and NbAs, utilizing diffraction techniques (single crystal x-ray diffraction and energy dispersive spectroscopy) and imaging techniques (transmission electron microscopy/scanning transmission electron microscopy). We observe defects of various degrees, leading to non-stoichiometric single crystals of all four semimetals. While TaP displays a large pnictide deficiency with composition TaP$_{0.83(3)}$, and stacking faults accompanied by anti-site disorder and site vacancies, TaAs displays transition metal deficiency with composition Ta$_{0.92(2)}$As and a high density of stacking faults. NbP also displays pnictide deficiency, yielding composition NbP$_{0.95(2)}$, and lastly, NbAs display very little deviation from a 1:1 composition, NbAs$_{1.00(3)}$, and is therefore recommended to serve as the model compound for these semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe$_2$ field-effect transistors

Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a gate voltage. We argue, through numerical simulations, that this behavior results from the difference in the size of the Schottky barriers between drain and source metal contacts. Each barrier can be modeled as a Schottky diode but with opposite senses of current rectification between them, with the diode response resulting from the light induced promotion of photo-generated carriers across the smaller barrier. The back gate voltage controls the sense of current rectification by modulating the relative amplitude between them. This effect, which gives rise to a novel type of optoelectronic switch, also yields a photovoltaic response. Hence, it could provide an alternative to PN-junctions when harvesting photovoltaic currents from transition metal dichalcogenides. We argue that the photovoltaic efficiency associated to this effect could be increased by just increasing the relative asymmetry between both Schottky barriers. We also suggest that this new electro-optical effect has potential for technological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-doped, displaying on/off ratios surpassing 106 and typical sub-threshold swings of ~ 140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm^2/Vs which are comparable to figures previously reported for single or bi-layered MoS_2 and/or for MoSe_2 exfoliated onto SiO_2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that both MoS_2 is electron doped, the stacking of MoTe_2 onto MoS_2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe_2 is comparable to those of MoS_2 and MoSe_2, the heavier element Te should lead to a stronger spin orbit-coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.

0 citations0 reviewsNo code linkedOpen access