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Zhen-Gang Zhu

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Published work

19 published item(s)

preprint2021arXiv

Fundamental Distinction between Intrinsic and Extrinsic Nonlinear Thermal Hall Effects

We theoretically investigated the fundamental distinction between intrinsic and extrinsic nonlinear thermal Hall effect in the presence of disorder at the second-order response to the temperature gradient in terms of the semi-classical Boltzmann equation. We found that, at low temperatures, the intrinsic contribution of the nonlinear thermal Hall conductivity is proportional to the square of temperature, whereas the extrinsic contributions (side-jump and skew-scattering) are independent of temperature. This distinct dependency on temperature provide a new approach to readily distinguish the intrinsic and extrinsic contributions. Specifically, we analysed the nonlinear thermal Hall effect for a tilted two-dimensional massive Dirac material. In particular, we showed that when the Fermi energy is located at the Dirac point, the signal is solely from the intrinsic mechanism; when the Fermi energy is higher, the extrinsic contributions are dominant, which are uncovered to be two to three orders of magnitude larger than the intrinsic contribution.

preprint2020arXiv

Hexagonal Warping Induced Nonlinear Planar Nernst Effect in Nonmagnetic Topological Insulators

We propose theoretically a new effect, i.e. nonlinear planar Nernst effect (NPNE), in nonmagnetic topological insulator (TI) Bi2Te3 in the presence of an in-plane magnetic field. We find that the Nernst current scales quadratically with temperature gradient but linearly with magnetic field and exhibits a cosine dependence of the orientation of the magnetic field with respect to the direction of the temperature gradient. The NPNE has a quantum origin arising from the conversion of a nonlinear transverse spin current to a charge current due to a joint result of hexagonal warping effect, spin-momentum locking, and the time-reversal symmetry breaking induced by the magnetic field.

preprint2015arXiv

Highly efficient light management for perovskite solar cells

Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

preprint2015arXiv

Redefinition of spin Hall magnetoresistance

Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces of the film sample, which corresponds to different resistance states of polarized electron flow with various spin directions relative to the applied magnetic field ($\mathbf{H}$), and brings about the SMR effect finally. The magnetic insulator layer, such as yttrium iron garnet (YIG), is not a requisite for the observation of SMR. Instead, the SMR effect is perfectly realized, with an order of magnitude increase, in the sample with a discontinuous layer of isolated-Co$_2$FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgO substrate. The model intuitively gives the typical relationship of SMR effect, i.e. $ρ_{\parallel}\approxρ_{\bot}>ρ_{T}$, where $ρ_{\bot}$, $ρ_{\parallel}$ and $ρ_{T}$ are longitudinal reisitivities with applied magnetic field ($\mathbf{H}$) direction perpendicular to the current direction out of plane (as Z direction), parallel with and perpendicular to it in plane (as X and Y direction), respectively. Our research reveals that the scattering between polarized and nonpolarized conduction electrons is the origin of SMR, and the intrinsic SMR is not constant when $\mathbf{H}$ direction rotates in XZ plane, which is distinct from that in the reported SMR mechanism.

preprint2014arXiv

Laser-assisted spin-polarized transport in graphene tunnel junctions

Keldysh nonequilibrium Green's function method is utilized to study theoretically the spin polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discussed the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependencies of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene, and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance (TMR), and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency.

preprint2013arXiv

Electronic and magnetic properties of twisted graphene nanoribbon and Möbius strips: first-principles calculations

The geometrical, electronic, and magnetic properties of twisted zigzag-edged graphene nanoribbons (ZGNRs) and novel graphene Möbius strips (GMS) are systematically investigated using first-principles density functional calculations. The structures of ZGNRs and GMS are optimized, and their stabilities are examined. The molecular energy levels and the spin polarized density of states are calculated. It is found that for twisted ZGNRs, the atomic bonding energy decreases quadratically with the increase of the twisted angle, and the HOMO-LUMO gap are varying in a sine-like behavior with the twisted angle. The calculated spin densities reveal that the ZGNRs and GMS have antiferromagnetic ground states, which persist during the twisting. The spin flips on the zigzag edges of GMS are observed at some positions.

preprint2013arXiv

Proximity effect of spin orbit coupling in Pt/Co2FeAl and Pt/Permalloy bilayers_810571

Proximity effect of spin orbit coupling is investigated through anomalous Hall effect in Pt/Co2FeAl and Pt/Permalloy bilayers. A series of nontrivial magnetotransport behaviors, resulting from a strong impact of phonons on skew scattering, is observed in these films with ultrathin ferromagnetic layers. The parameters representing skew scattering, side jump and intrinsic contributions are dramatically enhanced when the ferromagnetic layer is very thin, and they have clear linear dependences on the reciprocal of ferromagnetic layer thickness, indicating a powerful influence of Pt/Ferromagnet interface. Further study on Cu/Co2FeAl and Ta/Co2FeAl bilayers reveals that a simple interface scattering without intense spin orbit coupling is not sufficient to trigger such a phenomenon. The proximity effect of spin orbit coupling is thus suggested to occur at the Pt/Ferromagnet interface, and as a result quite large anomalous Hall angle (0.036) and Nernst angle (0.23) are confirmed in the Pt/CFA films at room temperature.

preprint2012arXiv

Comment on "Single-parameter quantum charge and spin pumping in armchair graphene nanoribbons" (arXiv:1206.3435v1, by Zhou and Wu)

In their recent submission arXiv:1206.3435v1 Zhou and Wu addressed the charge and spin pumping in an armchair graphene nanoribbon connected to magnetic and/or nonmagnetic leads at zero bias. They used thereby a pumping current formula based on time-reversal symmetry. In their appendix they made, based on their formulas, a number of claims concerning our recent works [K. -H. Ding, Z. -G. Zhu, and J. Berakdar, Phys. Rev. B 84, 115433 (2011)] on the laser modification of the spin-dependent current in an extended graphene monolayer contacted to two magnetic leads under a finite bias. Below we show in detail that the physical system considered by us is conceptually different from that of Zhou and Wu (arXiv:1206.3435v1) and cannot be treated with their theory for fundamental reasons (e.g., the time-reversal symmetry is inherently broken in our case due to the presence of the magnetic leads and the dc current generated by the finite bias). Hence, the statements of Zhou and Wu based on a comparison of their results with ours are scientifically groundless.

preprint2011arXiv

Berry curvature mediated valley Hall and charge Hall effects in graphene via strain engineering

We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced gap and the strain is discussed. We show that the substrate-induced gap itself does not break the symmetry that maps one valley onto the other, and hence does not yield a net charge Hall effect. The net charge Hall conductivity is found to be sizable and should be observable in the presence of both the gap and the strain. The sign of the Hall conductivity can be tuned by varying the strain parameters. The valley Hall conductivity is studied as well. The valley and the orbital magnetic moment accumulations on the sample edges may be detected in a Hall conductivity experiment.

preprint2011arXiv

Fast optical control of spin dynamics in a quantum wire

The spin dynamics in a quantum wire with a Rashba spin orbit interaction (SOI) is shown to be controllable via sub-picosecond electromagnetic pulses shaped appropriately. If the light polarization vector is along the wire's direction, the carriers experience a momentum boost while the phase coherence in different spin channels is maintained, a fact exploitable to control the speed of a photo-driven spin field effect transistor. A photon pulse with a polarization vector perpendicular to the wire results in a spin precession which is comparable to that due to the Rashba SOI and is tunable by the pulse field parameters, an effect utilizable in optically controlled spintronics devices.

preprint2011arXiv

Magnetic adatoms on graphene in the Kondo regime: an Anderson model treatment

We study theoretically the Kondo effect for a magnetic adatom on graphene using the Anderson model.Upon obtaining the Green's function of the impurity to higher order contributions in the hybridization, we calculated analytically the selfenergy in the presence of strong correlations.It is found that the Kondo resonance takes place in a narrow energy range of the impurity level around the Fermi energy which can be tuned by a gate voltage.We show that this range is linear in the Fermi energy $|μ|$ and is significantly narrower than in the case for a normal metal.The origin of this behavior is traced back to the inherent properties of graphene, especially its linear dispersion.The singularity in the full Green's function is also analyzed with the help of a transparent geometrical method.The relations between the various selfenergies and the implications for the experimental observations are discussed .

preprint2011arXiv

Time-dependent magneto-transport in a driven graphene spin valve

Based on the time-dependent nonequilibrium Green's function method we investigate theoretically the time and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a time-alternating gate voltage to graphene. The electrodes are magnetic with arbitrary mutual orientations of their magnetizations. We find features in the current that are governed by an interplay of the strength of the alternating field and the Dirac point in graphene: The influence of a weak alternating field on the zero bias conductance is strongly suppressed by the zero density of state at the Dirac point. In contrast, for a strong amplitude of the alternating field the current is dominated by several resonant peaks, in particular a marked peak appears at zero bias. This subtle competition results in a transition of the tunnel magnetoresistance from a broad peak to a sharp dip at a zero bias voltage applied to the electrodes. The dip amplitude can be manipulated by tuning the ac field frequency.

preprint2011arXiv

Topological view on magnetic adatoms in graphene

We study theoretically the physical properties of a magnetic impurity in graphene. Within the Anderson model for a very strong Coulomb interaction on the impurity, we start from the Slave-Boson method and introduce a topological picture consisting of a degree of a map and a winding number (WN) to analyze the phase shift and the occupation on the impurity. The occupation is linked to WN. For a generic normal metal we find a fractional WN. In contrast, the winding is accelerated by the relativistic dispersion of graphene at half-filling leading to an integer occupation. We show that the renormalization parameter that shifts the impurity level is insufficient to invert the sign of the energy level. Consequently, the state at half-filling is stable unless a gate voltage is tuned such that the Fermi level touches the edge of the broadened impurity level. Only in this case the zero field susceptibility is finite and shows a pronounced peak structure with the gate voltage.

preprint2010arXiv

Kondo effect in graphene: single vs. two-channel character

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, $d_{z^{2}}$, ($d_{xz}$,$d_{yz}$), and ($d_{x^{2}-y^{2}}$,$d_{xy}$) couple respectively with the $Γ_{1}$, $Γ_{5} (E_{1})$, and $Γ_{6} (E_{2})$ representations (reps) of $C_{6v}$ group in ADC case. The basses for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

preprint2010arXiv

Magneto-transport in impurity-doped few-layer graphene spin valve

Using Keldysh nonequilibrium Green's function method we study the spin-dependent transport through impurity-doped few layer graphene sandwiched between two magnetic leads with an arbitrary mutual orientations of the magnetizations. We find for parallel electrodes magnetizations that the differential conductance possesses two resonant peaks as the applied bias increases. These peaks are traced back to a buildup of a magnetic moment on the impurity due to the electrodes spin polarization. For a large mutual angle of the electrodes magnetization directions, the two resonant peaks approach each others and merge into a single peak for antiparallel orientation of the electrodes magnetizations. We point out that the tunneling magnetoresistance (TMR) may change sign for relatively small changes in the values of the polarization parameters. Furthermore, we inspect the behaviour of the differential conductance and TMR upon varying the temperature.

preprint2010arXiv

Photoinduced dynamics in quantum rings

We investigate the spin-dependent dynamical response of a semiconductor quantum ring with a spin orbit interaction (SOI) upon the application of a single and two linearly polarized, picosecond, asymmetric electromagnetic pulses in the presence of a static magnetic flux. We find that the pulse-generated electric dipole moment is spin dependent. It is also shown that the SOI induces an extra SU(2) effective flux in addition to the static external magnetic flux which is reflected in an additional periodicity of the spin-dependent dipole moment. Furthermore, the pulses may induce a net dynamical charge currents (CC) and dynamical spin currents (SC) when the clockwise and anti-clockwise symmetry of the carrier is broken upon the pulse application.

preprint2010arXiv

Single or multi-flavor Kondo effect in graphene

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, $d_{z^{2}}$, ($d_{xz}$,$d_{yz}$), and ($d_{x^{2}-y^{2}}$,$d_{xy}$) couple respectively with the $Γ_{1}$, $Γ_{5} (E_{1})$, and $Γ_{6} (E_{2})$ representations (reps) of $C_{6v}$ group in ADC case. The basses for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

preprint2009arXiv

Charge and spin Hall effect in graphene with magnetic impurities

We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.

preprint2002arXiv

Effect of Spin-Flip Scattering on Electrical Transport in Magnetic Tunnel Junctions

By means of the nonequilibrium Green function technique, the effect of spin-flip scatterings on the spin-dependent electrical transport in ferromagnet-insulator-ferromagnet (FM-I-FM) tunnel junctions is investigated. It is shown that Julliere's formula for the tunnel conductance must be modified when including the contribution from the spin-flip scatterings. It is found that the spin-flip scatterings could lead to an angular shift of the tunnel conductance, giving rise to the junction resistance not being the largest when the orientations of magnetizations in the two FM electrodes are antiparallel, which may offer an alternative explanation for such a phenomenon observed previously in experiments in some FM-I-FM junctions. The spin-flip assisted tunneling is also observed.