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Kai-He Ding

Kai-He Ding appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.dis-nn

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Published work

7 published item(s)

preprint2014arXiv

Laser-assisted spin-polarized transport in graphene tunnel junctions

Keldysh nonequilibrium Green's function method is utilized to study theoretically the spin polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discussed the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependencies of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene, and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance (TMR), and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads

We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Green's function (NGF) technique, it is demonstrated that, the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresistance (TMR) around zero bias voltage possesses a pronounced plateau structure for system with semiconducting 7-AGNR or metallic 8-AGNR in the absence of exchange splitting, but this plateau structure for 8-AGNR system is remarkably broader than that for 7-AGNR one. Interestingly, the increase of exchange splitting $Δ$ suppresses the amplitude of the structure for 7-AGNR system. However, the TMR is enhanced much for 8-AGNR system under the bias amplitude comparable to splitting strength. Further, the current-induced spin transfer torque (STT) for 7-AGNR system is systematically larger than that for 8-AGNR one. The findings here suggest the design of GNR-based spintronic devices by using a metallic AGNR, but it is more favorable to fabricate a current-controlled magnetic memory element by using a semiconducting AGNR.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Time-dependent magneto-transport in a driven graphene spin valve

Based on the time-dependent nonequilibrium Green's function method we investigate theoretically the time and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a time-alternating gate voltage to graphene. The electrodes are magnetic with arbitrary mutual orientations of their magnetizations. We find features in the current that are governed by an interplay of the strength of the alternating field and the Dirac point in graphene: The influence of a weak alternating field on the zero bias conductance is strongly suppressed by the zero density of state at the Dirac point. In contrast, for a strong amplitude of the alternating field the current is dominated by several resonant peaks, in particular a marked peak appears at zero bias. This subtle competition results in a transition of the tunnel magnetoresistance from a broad peak to a sharp dip at a zero bias voltage applied to the electrodes. The dip amplitude can be manipulated by tuning the ac field frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Kondo effect in graphene: single vs. two-channel character

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, $d_{z^{2}}$, ($d_{xz}$,$d_{yz}$), and ($d_{x^{2}-y^{2}}$,$d_{xy}$) couple respectively with the $Γ_{1}$, $Γ_{5} (E_{1})$, and $Γ_{6} (E_{2})$ representations (reps) of $C_{6v}$ group in ADC case. The basses for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magneto-transport in impurity-doped few-layer graphene spin valve

Using Keldysh nonequilibrium Green's function method we study the spin-dependent transport through impurity-doped few layer graphene sandwiched between two magnetic leads with an arbitrary mutual orientations of the magnetizations. We find for parallel electrodes magnetizations that the differential conductance possesses two resonant peaks as the applied bias increases. These peaks are traced back to a buildup of a magnetic moment on the impurity due to the electrodes spin polarization. For a large mutual angle of the electrodes magnetization directions, the two resonant peaks approach each others and merge into a single peak for antiparallel orientation of the electrodes magnetizations. We point out that the tunneling magnetoresistance (TMR) may change sign for relatively small changes in the values of the polarization parameters. Furthermore, we inspect the behaviour of the differential conductance and TMR upon varying the temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Single or multi-flavor Kondo effect in graphene

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, $d_{z^{2}}$, ($d_{xz}$,$d_{yz}$), and ($d_{x^{2}-y^{2}}$,$d_{xy}$) couple respectively with the $Γ_{1}$, $Γ_{5} (E_{1})$, and $Γ_{6} (E_{2})$ representations (reps) of $C_{6v}$ group in ADC case. The basses for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Charge and spin Hall effect in graphene with magnetic impurities

We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.

0 citations0 reviewsNo code linkedOpen access