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Zengle Huang

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cond-mat.mtrl-sci

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preprint2020arXiv

Native Defects in Antiferromagnetic Topological Insulator MnBi $_2$ Te $_4$

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$ . Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$ ~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$ .

preprint2019arXiv

Pb-doped p-type Bi $_2$ Se $_3$ thin films via interfacial engineering

Due to high density of native defects, the prototypical topological insulator (TI), Bi $_2$ Se $_3$ , is naturally n-type. Although Bi $_2$ Se $_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi $_2$ Se $_3$ . However, Pb-doping has so far failed to achieve p-type Bi $_2$ Se $_3$ not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi $_2$ Se $_3$ thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca. With this SOC-preserving counter-doping scheme, it is now possible to fabricate Bi $_2$ Se $_3$ samples with tunable Fermi levels without compromising their topological properties.

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Zengle Huang

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2 publications

Native Defects in Antiferromagnetic Topological Insulator MnBi $_2$ Te $_4$

Pb-doped p-type Bi $_2$ Se $_3$ thin films via interfacial engineering

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Zengle Huang

Research overview

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2 publications

Native Defects in Antiferromagnetic Topological Insulator MnBi2_22​Te4_44​

Pb-doped p-type Bi2_22​Se3_33​ thin films via interfacial engineering

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Native Defects in Antiferromagnetic Topological Insulator MnBi $_2$ Te $_4$

Pb-doped p-type Bi $_2$ Se $_3$ thin films via interfacial engineering