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Researcher profile

Mao-Hua Du

Mao-Hua Du contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallquant-ph

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Published work

7 published item(s)

preprint2022arXiv

Correlative nanoscale imaging of strained hBN spin defects

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films

Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fantastic flat bands and where to find them: The CoSn-type compounds

Quantum interference on the kagome lattice generates electronic bands with narrow bandwidth, called flat bands. Crystal structures incorporating this lattice can host strong electron correlations with non-standard ingredients, but only if these bands lie at the Fermi level. In the six compounds with the CoSn structure type (FeGe, FeSn, CoSn, NiIn, RhPb, and PtTl) the transition metals form a kagome lattice. The two iron variants are robust antiferromagnets so we focus on the latter four and investigate their thermodynamic and transport properties. We consider these results and calculated band structures to locate and characterize the flat bands in these materials. We propose that CoSn and RhPb deserve the community's attention for exploring flat band physics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$.

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preprint2020arXiv

Robust ferromagnetism in highly strained SrCoO3 thin films

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

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preprint2020arXiv

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4; such strain is further enhanced in MnBi4Te7, giving rise to even higher BiMn density. The abundance of intrinsic BiMn donors results in degenerate n-type conductivity under the Te-poor growth condition. Our calculations suggest that growths in a Te-rich condition can lower the Fermi level, which is supported by our transport measurements. We further show that the internal strain can also enable efficient doping by large-size-mismatched substitutional NaMn acceptors, which can compensate BiMn donors and lower the Fermi level. Na doping may pin the Fermi level inside the bulk band gap even at the Te-poor limit in MnBi2Te4. Furthermore, facile defect formation in MnSb2Te4 and its implication in Sb doping in MnBi2Te4 as well as the defect segregation in MnBi4Te7 are discussed. The defect engineering and doping strategies proposed in this paper will stimulate further studies for improving synthesis and for manipulating magnetic and topological properties in MnBi2Te4, MnBi4Te7, and related compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning Magnetic Order in the van der Waals Metal Fe5GeTe2 by Cobalt Substitution

Fe5-xGeTe2 is a van der Waals material with one of the highest reported bulk Curie temperatures, $T_C$ ~ 310K. In this study, theoretical calculations and experiments are utilized to demonstrate that the magnetic ground state is highly sensitive to local atomic arrangements and the interlayer stacking. Cobalt substitution is found to be an effective way to manipulate the magnetic properties while also increasing the ordering temperature. In particular, cobalt substitution up to 30% enhances $T_C$ and changes the magnetic anisotropy, while approximately 50% cobalt substitution yields an antiferromagnetic state. Single crystal x-ray diffraction evidences a structural change upon increasing the cobalt concentration, with a rhombohedral cell observed in the parent material and a primitive cell observed for ~46% cobalt content relative to iron. First principles calculations demonstrate that it is a combination of high cobalt content and the concomitant change to primitive layer stacking that produces antiferromagnetic order. These results illustrate the sensitivity of magnetism in Fe5-xGeTe2 to composition and structure, and emphasize the important role of structural order/disorder and layer stacking in cleavable magnetic materials.

0 citations0 reviewsNo code linkedOpen access