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Researcher profile

Jisoo Moon

Jisoo Moon contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.app-phphysics.optics

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Published work

5 published item(s)

preprint2023arXiv

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions provide a path to new properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi2Se3/WS2 heterostructures, where the Bi2Se3 A1(3) surface phonon, a mode particularly susceptible to electron-phonon coupling, is imprinted onto the excitonic emission of the WS2. The exciton-phonon bound state (or exciton-phonon quasiparticle) presents itself as evenly separated peaks superposed on the WS2 excitonic photoluminescence spectrum, whose periodic spacing corresponds to the A1(3) surface phonon energy. Low-temperature polarized Raman spectroscopy of Bi2Se3 reveals intense surface phonons and local symmetry breaking that allows the A1(3) surface phonon to manifest in otherwise forbidden scattering geometries. Our work advances knowledge of the complex interlayer van der Waals interactions, and facilitates technologies that combine the distinctive transport and optical properties from separate materials into one device for possible spintronics, valleytronics, and quantum computing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase, and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion at room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling submicron features (e.g. pixels), and are long-term stable for more than 221 days. Our work suggests few nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and submicron spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ambipolar magneto-optical response of ultra-low carrier density topological insulators

We have investigated the THz range magneto-optical response of ultralow carrier density films of Sb$_2$Te$_3$ using time-domain THz polarimetry. Undoped Sb$_2$Te$_3$ has a chemical potential that lies inside the bulk valence band. Thus its topological response is masked by bulk carriers. However, with appropriate buffer layer engineering and chemical doping, Sb$_2$Te$_3$ thin films can be grown with extremely low electron or hole densities. The ultralow carrier density samples show unusual optical properties and quantized response in the presence of magnetic fields. Consistent with the expectations for Dirac fermions, a quantized Hall response is seen even in samples where the zero field conductivity falls below detectable levels. The discontinuity in the Faraday angle with small changes in the filling fraction across zero is manifestation of the parity anomaly in 2D Dirac systems with broken time reversal symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pb-doped p-type Bi$_2$Se$_3$ thin films via interfacial engineering

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi$_2$Se$_3$. However, Pb-doping has so far failed to achieve p-type Bi$_2$Se$_3$ not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi$_2$Se$_3$ thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca. With this SOC-preserving counter-doping scheme, it is now possible to fabricate Bi$_2$Se$_3$ samples with tunable Fermi levels without compromising their topological properties.

0 citations0 reviewsNo code linkedOpen access