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Jisoo Moon

Jisoo Moon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-elcond-mat.supr-conphysics.app-phphysics.optics

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Published work

10 published item(s)

preprint2023arXiv

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions provide a path to new properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi2Se3/WS2 heterostructures, where the Bi2Se3 A1(3) surface phonon, a mode particularly susceptible to electron-phonon coupling, is imprinted onto the excitonic emission of the WS2. The exciton-phonon bound state (or exciton-phonon quasiparticle) presents itself as evenly separated peaks superposed on the WS2 excitonic photoluminescence spectrum, whose periodic spacing corresponds to the A1(3) surface phonon energy. Low-temperature polarized Raman spectroscopy of Bi2Se3 reveals intense surface phonons and local symmetry breaking that allows the A1(3) surface phonon to manifest in otherwise forbidden scattering geometries. Our work advances knowledge of the complex interlayer van der Waals interactions, and facilitates technologies that combine the distinctive transport and optical properties from separate materials into one device for possible spintronics, valleytronics, and quantum computing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase, and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion at room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling submicron features (e.g. pixels), and are long-term stable for more than 221 days. Our work suggests few nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and submicron spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ambipolar magneto-optical response of ultra-low carrier density topological insulators

We have investigated the THz range magneto-optical response of ultralow carrier density films of Sb$_2$Te$_3$ using time-domain THz polarimetry. Undoped Sb$_2$Te$_3$ has a chemical potential that lies inside the bulk valence band. Thus its topological response is masked by bulk carriers. However, with appropriate buffer layer engineering and chemical doping, Sb$_2$Te$_3$ thin films can be grown with extremely low electron or hole densities. The ultralow carrier density samples show unusual optical properties and quantized response in the presence of magnetic fields. Consistent with the expectations for Dirac fermions, a quantized Hall response is seen even in samples where the zero field conductivity falls below detectable levels. The discontinuity in the Faraday angle with small changes in the filling fraction across zero is manifestation of the parity anomaly in 2D Dirac systems with broken time reversal symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pb-doped p-type Bi$_2$Se$_3$ thin films via interfacial engineering

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi$_2$Se$_3$. However, Pb-doping has so far failed to achieve p-type Bi$_2$Se$_3$ not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi$_2$Se$_3$ thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca. With this SOC-preserving counter-doping scheme, it is now possible to fabricate Bi$_2$Se$_3$ samples with tunable Fermi levels without compromising their topological properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Finite-size and composition-driven topological phase transition in (Bi$_{1-x}$In$_x$)$_2$Se$_3$ thin films

In a topological insulator (TI), if its spin-orbit coupling (SOC) strength is gradually reduced, the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which point the bulk gap closes: this is the standard description of the topological phase transition (TPT). However, this description of TPT, driven solely by the SOC (or something equivalent) and followed by closing and reopening of the bulk band gap, is valid only for infinite-size samples, and little is known how TPT occurs for finite-size samples. Here, using both systematic transport measurements on interface-engineered(Bi$_{1-x}$In$_x$)$_2$Se$_3$ thin films and theoretical simulations (with animations in Supporting Information) we show that description of TPT in finite-size samples needs to be substantially modified from the conventional picture of TPT due to surface-state hybridization and bulk confinement effects. We also show that the finite-size TPT is composed of two separate transitions, topological-normal transition (TNT) and metal-insulator transition (MIT) by providing a detailed phase diagram in the two-dimensional phase space of sample size and SOC strength.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light

Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Stability of low-carrier-density topological-insulator Bi$_2$Se$_3$ thin films and effect of capping layers

Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi$_2$Se$_3$ thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi$_2$Se$_3$ thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ~150% over a week and by ~280% over 9 months. In situ-deposited Se and ex situ-deposited Poly(methyl methacrylate) (PMMA) suppresses the aging effect to ~27% and ~88% respectively over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Brief review on iron-based superconductors: are there clues for unconventional superconductivity?

Study of superconductivity in layered iron-based materials was initiated in 2006 by Hosono's group, and boosted in 2008 by the superconducting transition temperature, Tc, of 26 K in LaFeAsO1-xFx. Since then, enormous researches have been done on the materials, with Tc reaching as high as 55 K. Here, we review briefly experimental and theoretical results on atomic and electronic structures and magnetic and superconducting properties of FeAs-based superconductors and related compounds. We seek for clues for unconventional superconductivity in the materials.

0 citations0 reviewsNo code linkedOpen access