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Researcher profile

Z. F. Ren

Z. F. Ren contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2013arXiv

Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring

We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of Sb site by Te atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of 62% over the ZT value for the optimized Te-doped single crystal sample. Hall coefficient and electrical resistivity measurements reveal a decreased mobility and increased concentration of the carriers in the doped sample.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements

An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also explained for Cu0.01Bi2Te2.7Se0.3 while a second measurement is made on Yb0.35Co4Sb12 as a function of time at 400 C. Both measurements confirm that the materials are thermally stable for the temperature range and time period measured. Measurements made during temperature cycling show an irreversible decrease in the electrical resistivity of Cu0.01Bi2Te2.7Se0.3 when the measuring temperature exceeds the pressing temperature. Several other possible uses of such a system include but are not limited to studying the effects of annealing and/or oxidation as a function of both temperature and time.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermoelectric Properties of Ho-doped Bi1-xSbx

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.

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