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C. P. Opeil

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.other cond-mat.supr-con

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preprint2012arXiv

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials.

preprint2012arXiv

Spin ordering and electronic texture in the bilayer iridate Sr $_3$ Ir $_2$ O $_7$

Through a neutron scattering, charge transport, and magnetization study, the correlated ground state in the bilayer iridium oxide Sr $_3$ Ir $_2$ O $_7$ is explored. Our combined results resolve scattering consistent with a high temperature magnetic phase that persists above 600 K, reorients at the previously defined $T_{AF}=280$ K, and coexists with an electronic ground state whose phase behavior suggests the formation of a fluctuating charge or orbital phase that freezes below $T^{*}\approx70$ K. Our study provides a window into the emergence of multiple electronic order parameters near the boundary of the metal to insulator phase transition of the 5d $J_{eff}=1/2$ Mott phase.

preprint2012arXiv

Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements

An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also explained for Cu0.01Bi2Te2.7Se0.3 while a second measurement is made on Yb0.35Co4Sb12 as a function of time at 400 C. Both measurements confirm that the materials are thermally stable for the temperature range and time period measured. Measurements made during temperature cycling show an irreversible decrease in the electrical resistivity of Cu0.01Bi2Te2.7Se0.3 when the measuring temperature exceeds the pressing temperature. Several other possible uses of such a system include but are not limited to studying the effects of annealing and/or oxidation as a function of both temperature and time.

preprint2012arXiv

Thermoelectric Properties of Ho-doped Bi1-xSbx

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.

preprint2010arXiv

Band structure of SnTe studied by Photoemission Spectroscopy

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our study reveals the conjectured complex Fermi surface structure near the L-points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5eV below the gap, corresponding to a carrier density of p =1.14x10^{21} cm^{-3} or 7.2x10^{-2} holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.

preprint2010arXiv

Tin telluride: a weakly co-elastic metal

We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport, magnetization, specific heat, and $^{119}$ Sn Mössbauer spectroscopy measurements on SnTe and Sn $_{0.995}$ Cr $_{0.005}$ Te. Hall measurements at $T=77$ K indicate that our Bridgman-grown single crystals have a $p$ -type carrier concentration of $3.4 \times 10^{19}$ cm $^{-3}$ and that our Cr-doped crystals have an $n$ -type concentration of $5.8 \times 10^{22}$ cm $^{-3}$ . Although our SnTe crystals are diamagnetic over the temperature range $2\, \text{K} \leq T \leq 1100\, \text{K}$ , the Cr-doped crystals are room temperature ferromagnets with a Curie temperature of 294 K. For each sample type, three-terminal capacitive dilatometry measurements detect a subtle 0.5 micron distortion at $T_c \approx 85$ K. Whereas our RUS measurements on SnTe show elastic hardening near the structural transition, pointing to co-elastic behavior, similar measurements on Sn $_{0.995}$ Cr $_{0.005}$ Te show a pronounced softening, pointing to ferroelastic behavior. Effective Debye temperature, $θ_D$ , values of SnTe obtained from $^{119}$ Sn Mössbauer studies show a hardening of phonons in the range 60--115K ( $θ_D$ = 162K) as compared with the 100--300K range ( $θ_D$ = 150K). In addition, a precursor softening extending over approximately 100 K anticipates this collapse at the critical temperature, and quantitative analysis over three decades of its reduced modulus finds $ΔC_{44}/C_{44}=A|(T-T_0)/T_0|^{-κ}$ with $κ= 0.50 \pm 0.02$ , a value indicating a three-dimensional softening of phonon branches at a temperature $T_0 \sim 75$ K, considerably below $T_c$ . We suggest that the differences in these two types of elastic behaviors lie in the absence of elastic domain wall motion in the one case and their nucleation in the other.

preprint2006arXiv

Valence-Band UPS, 6 $p$ Core-Level XPS Photoemission Spectroscopy, and Low-Energy Electron Diffraction of a Uranium (001) Single Crystal

Valence-band ultraviolet photoemission spectroscopy (UPS) at 173K and 6p core-level X-ray photoemission spectroscopy (XPS) at room temperature were performed on a high quality uranium single crystal. Significant agreement is found with first-principles electronic band-structure calculations, using a generalized gradient approximation (GGA). In addition, using Low Energy Electron Diffraction (LEED) for the (001) surface, we find a well-ordered orthorhombic crystallographic structure representative of the bulk material.

preprint2003arXiv

Onset of antiferromagnetism in UPt_{3} via Th-substitution studied by muon spin spectroscopy

Muon spin spectroscopy has been used to study in detail the onset of large-moment antiferromagnetism (LMAF) in UPt_{3} as induced by Th substitution. Zero-field experiments have been carried out on a series of polycrystalline U_{1-x}Th_{x}Pt_{3} (0 <= x <= 0.05) samples in the temperature range 0.04 - 10 K. At low Th content (x <= 0.002) magnetic ordering on the time scale of the uSR experiment (10^{-8} s) is not detected. For x = 0.005 a weak magnetic signal appears below T = 2 K, while for 0.006 <= x <= 0.05, spontaneous oscillations in the uSR spectra signal the presence of the LMAF phase. The data are well described by a two-component depolarization function, combining the contribution of a polycrystalline antiferromagnet and a Kubo-Lorentzian response. However, the transition into the antiferromagnetic phase is quite broad. For x = 0.01 and 0.02, a weak magnetic signal appears below about 7 K, which is well above the mean-field transition temperatures. The broadening may be a result of the effects of disorder on the time fluctuations associated with anomalous small-moment antiferromagnetism.

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C. P. Opeil

Research overview

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8 publications

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Spin ordering and electronic texture in the bilayer iridate Sr $_3$ Ir $_2$ O $_7$

Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements

Thermoelectric Properties of Ho-doped Bi1-xSbx

Band structure of SnTe studied by Photoemission Spectroscopy

Tin telluride: a weakly co-elastic metal

Valence-Band UPS, 6 $p$ Core-Level XPS Photoemission Spectroscopy, and Low-Energy Electron Diffraction of a Uranium (001) Single Crystal

Onset of antiferromagnetism in UPt_{3} via Th-substitution studied by muon spin spectroscopy

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C. P. Opeil

Research overview

Is this your work?

8 publications

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Spin ordering and electronic texture in the bilayer iridate Sr3_33​Ir2_22​O7_77​

Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements

Thermoelectric Properties of Ho-doped Bi1-xSbx

Band structure of SnTe studied by Photoemission Spectroscopy

Tin telluride: a weakly co-elastic metal

Valence-Band UPS, 6ppp Core-Level XPS Photoemission Spectroscopy, and Low-Energy Electron Diffraction of a Uranium (001) Single Crystal

Onset of antiferromagnetism in UPt_{3} via Th-substitution studied by muon spin spectroscopy

See the researcher in context

Building this map preview

Spin ordering and electronic texture in the bilayer iridate Sr $_3$ Ir $_2$ O $_7$

Valence-Band UPS, 6 $p$ Core-Level XPS Photoemission Spectroscopy, and Low-Energy Electron Diffraction of a Uranium (001) Single Crystal