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Yuze Meng

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Published work

4 published item(s)

preprint2019arXiv

Giant Valley-Zeeman Splitting from Spin-Singlet and Spin-Triplet Interlayer Excitons in WSe2/MoSe2 Heterostructure

Transition metal dichalcogenides (TMDCs) heterostructure with a type II alignment hosts unique interlayer excitons with the possibility of spin-triplet and spin-singlet states. However, the associated spectroscopy signatures remain elusive, strongly hindering the understanding of the Moire potential modulation of the interlayer exciton. In this work, we unambiguously identify the spin-singlet and spin-triplet interlayer excitons in the WSe2/MoSe2 hetero-bilayer with a 60-degree twist angle through the gate- and magnetic field-dependent photoluminescence spectroscopy. Both the singlet and triplet interlayer excitons show giant valley-Zeeman splitting between the K and K' valleys, a result of the large Lande g-factor of the singlet interlayer exciton and triplet interlayer exciton, which are experimentally determined to be ~ 10.7 and ~ 15.2, respectively, in good agreement with theoretical expectation. The PL from the singlet and triplet interlayer excitons show opposite helicities, determined by the atomic registry. Helicity-resolved photoluminescence excitation (PLE) spectroscopy study shows that both singlet and triplet interlayer excitons are highly valley-polarized at the resonant excitation, with the valley polarization of the singlet interlayer exciton approaches unity at ~ 20 K. The highly valley-polarized singlet and triplet interlayer excitons with giant valley-Zeeman splitting inspire future applications in spintronics and valleytronics.

preprint2016arXiv

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

preprint2014arXiv

Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons

Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of these experiments is made difficult by the presence of residual bulk carriers and their coupling to surface states, which is not yet well understood. In this work, we present the first evidence for the existence and control of bulk-surface coupling in Bi2Te2Se nanoribbons, which are promising platforms for future TI-based devices. Our magnetoresistance measurements reveal that the number of coherent channels contributing to quantum interference in the nanoribbons changes abruptly when the film thickness exceeds the bulk phase relaxation length. We interpret this observation as an evidence for bulk-mediated coupling between metallic states located on opposite surfaces. This hypothesis is supported by additional magnetoresistance measurements conducted under a set of gate voltages and in a parallel magnetic field, the latter of which alters the intersurface coupling in a controllable way.

preprint2014arXiv

Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes

Universal conductance fluctuations (UCFs) are extracted in the magnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes. Its two-dimensional character is demonstrated by the field-tilting magnetoresistance measurements. Its origin from the surface electrons is determined by the fact that the UCF amplitudes keep unchanged while applying an in-plane field to suppress the coherence of bulk electrons. After considering the ensemble average in a batch of micrometer-sized samples, the intrinsic UCF magnitudes of over 0.37 e2/h is obtained. This agrees with the theoretical prediction on topological surface states. All the evidence point to the successful observation of the UCF of topological surface states.