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Yunhao Lu

Yunhao Lu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-ph

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Published work

8 published item(s)

preprint2022arXiv

Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree

Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials.

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preprint2020arXiv

Highly anisotropic two-dimensional metal in monolayer MoOCl$_2$

Anisotropy is a general feature in materials. Strong anisotropy could lead to interesting physical properties and useful applications. Here, based on first-principles calculations and theoretical analysis, we predict a stable two-dimensional (2D) material---the monolayer MoOCl$_2$, and show that it possesses intriguing properties related to its high anisotropy. Monolayer MoOCl$_2$ can be readily exfoliated from the van der Waals layered bulk, which has already been synthesized. We show that a high in-plane anisotropy manifests in the structural, phononic, mechanical, electronic, and optical properties of monolayer MoOCl$_2$. The material is a metal with highly anisotropic Fermi surfaces, giving rise to open orbits at the Fermi level, which can be probed in magneto-transport. Remarkably, the combination of high anisotropy and metallic character makes monolayer MoOCl$_2$ an almost ideal hyperbolic material. It has two very wide hyperbolic frequency windows from 0.41 eV (99 THz) to 2.90 eV (701 THz), and from 3.63 eV (878 THz) to 5.54 eV (1340 THz). The former window has a large overlap with the visible spectrum, and the dissipation for most part of this window is very small. The window can be further tuned by the applied strain, such that at a chosen frequency, a transition between elliptic and hyperbolic character can be induced by strain. Our work discovers a highly anisotropic 2D metal with extraordinary properties, which holds great potential for electronic and optical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and negative capacitors, making ultralow energy consumption electronic devises possible. With the recent development in low dimensional ferroelectric materials, emerging 2D out-of-plane ferroelectric materials like MoTe2 have great potential for future development. Despite previous phenomenological studies, the underlying microscopic origin of ferroelectricity is still missing. Here, using density functional theory and Wannier function methods, we reveal that the origin of ferroelectricity of these transition metal dichalcogenides comes from the Jahn taller effect and followed by a covalent bonding between transition metal atoms. Moreover, the atypical electronic behavior of these monolayer AB2 (A=Cr, Mo, W; B=S, Se, Te) TMDs compare to traditional improper ferroelectrics hints a strong electronic origin of the polarization, suitable for future industrial applications.

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preprint2020arXiv

Tunable Topological Energy Bands in 2D Dialkali-Metal Monoxides

2D materials with nontrivial energy bands are highly desirable for exploring various topological phases of matter, as low dimensionality opens unprecedented opportunities for manipulating the quantum states. Here, it is reported that monolayer (ML) dialkali-metal monoxides, in the well-known 2H-MoS$_2$ type lattice, host multiple symmetry-protected topological phases with emergent fermions, which can be effectively tuned by strain engineering. Based on first-principles calculations, it is found that in the equilibrium state, ML Na$_2$O is a 2D double Weyl semimetal, while ML K$_2$O is a 2D pseudospin-1 metal. These exotic topological states exhibit a range of fascinating effects, including universal optical absorbance, super Klein tunneling, and super collimation effect. By introducing biaxial or uniaxial strain, a series of quantum phase transitions between 2D double Weyl semimetal, 2D Dirac semimetal, 2D pseudospin-1 metal, and semiconductor phases can be realized. The results suggest monolayer dialkali-metal monoxides as a promising platform to explore fascinating physical phenomena associated with novel 2D emergent fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices

Negative magnetoresistance (NMR) induced by the Adler-Bell-Jackiw anomaly is regarded as the most prominent quantum signature of Weyl semimetals when electrical field $E$ is collinear with the external magnetic field $B$. In this article, we report universal NMR in nonmagnetic, centrosymmetric transition metal dipnictides MPn$_{2}$ (M=Nb and Ta; Pn=As and Sb), in which the existence of Weyl fermions can be explicitly excluded. Using temperature-dependent magnetoresistance, Hall and thermoelectric coefficients of Nernst and Seebeck effects, we determine that the emergence of the NMR phenomena in MPn$_{2}$ is coincident with a Lifshitz transition, corresponding to the formation of unique electron-hole-electron ($e$-$h$-$e$) pockets along the $I-L-I'$ direction. First-principles calculations reveal that, along the $I-L-I'$ line, the $d_{xy}$ and $d_{x^{2}-y^{2}}$ orbitals of the transition metal form tilted nodal rings of band crossing well below the Fermi level. Strong spin-orbital coupling gaps all the crossing points and creates the characteristic $e$-$h$-$e$ structure, making MPn$_{2}$ a topological semimetal with $\mathbb{Z}_2$ indices of [0;(111)]. By excluding the weak localization contribution of the bulk states, we conclude that the universal NMR in MPn$_{2}$ may have an exotic origin in topological surface states, which appears in pairs with opposite spin-momentum locking on nontrivial surfaces.

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preprint2016arXiv

Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$

We report extremely large positive magnetoresistance of 1.72 million percent in single crystal TaSb$_{2}$ at moderate conditions of 1.5 K and 15 T. The quadratic growth of magnetoresistance (MR $\propto\,B^{1.96}$) is not saturating up to 15 T, a manifestation of nearly perfect compensation with $<0.1\%$ mismatch between electron and hole pockets in this semimetal. The compensation mechanism is confirmed by temperature-dependent MR, Hall and thermoelectric coefficients of Nernst and Seebeck, revealing two pronounced Fermi surface reconstruction processes without spontaneous symmetry breaking, \textit{i.e.} Lifshitz transitions, at around 20 K and 60 K, respectively. Using quantum oscillations of magnetoresistance and magnetic susceptibility, supported by density-functional theory calculations, we determined that the main hole Fermi surface of TaSb$_{2}$ forms a unique shoulder structure along the $F-L$ line. The flat band top of this shoulder pocket is just a few meV above the Fermi level, leading to the observed topological phase transition at 20 K when the shoulder pocket disappears. Further increase in temperature pushes the Fermi level to the band top of the main hole pocket, induced the second Lifshitz transition at 60 K when hole pocket vanishes completely.

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preprint2015arXiv

Strain effects on electronic and optic properties of monolayer C$_2$N holey two-dimensional crystals

A new two-dimensional material, the C$_2$N holey 2D (C$_2$N-$h$2D) crystal, has recently been synthesized. Here we investigate the strain effects on the properties of this new material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains $\geq 12\%$. It remains a direct gap semiconductor under strain and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8\% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient $\sim10^6$ cm$^{-1}$ covering a wide spectrum. Our findings suggest the great potential of strain-engineered C$_2$N-$h$2D in electronic and optoelectronic device applications.

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preprint2013arXiv

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon

A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we demonstrate here simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (53-85 meV), while the Fermi level (EF) remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by the surface state. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive topological surface states.

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