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Yun Ling

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Published work

2 published item(s)

preprint2019arXiv

High Dynamic Range Externally Time-gated Photon Counting Optical Time-domain Reflectometry

Single photon detector (SPD) has a maximum count rate due to its dead time, which results in that the dynamic range of photon counting optical time-domain reflectometry (PC-OTDR) de-creases with the length of monitored fiber. To further improve the dynamic range of PC-OTDR, we propose and demonstrate an externally time-gated scheme. The externally time-gated scheme is realized by using a high-speed optical switch, i.e. a Mach-Zehnder interferometer, to modulate the back-propagation optical signal, and to allow that only a certain segment of the fiber is monitored by the SPD. The feasibility of proposed scheme is first examined with theoretical analysis and simulation; then we experimentally demonstrate it with our experimental PC-OTDR testbed operating at 800 nm wavelength band. In our studies, a dynamic range of 30.0 dB is achieved in a 70 meters long PC-OTDR system with 50 ns external gates, corresponding to an improvement of 11.0 dB in dynamic range comparing with no gating operation. Furthermore, with the improved dynamic range, a successful identification of a 0.37 dB loss event is detected with 30-seconds accumulation, which could not be identified without gating operation. Our scheme paves an avenue for developing PC-OTDR systems with high dynamic range.

preprint2014arXiv

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical devices with acceptable performance still remains as a challenge. Employing tungsten disulfide multilayer thin crystals, we demonstrate that using gold as the only contact metal and choosing appropriate thickness of the crystal, high performance transistor with on/off ratio of $10^{8}$ and mobility up to $234\:cm^{2}V^{-1}s^{-1}$ at room temperature can be realized in a simple device structure. Further low temperature study revealed that the high performance of our device is caused by the minimized Schottky barrier at the contact and the existence of a shallow impurity level around 80 meV right below the conduction band edge. From the analysis on temperature dependence of field-effect mobility, we conclude that strongly suppressed phonon scattering and relatively low charge impurity density are the key factors leading to the high mobility of our tungsten disulfide devices.