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Chunlei Yue

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Published work

3 published item(s)

preprint2020arXiv

Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals

In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies, produces an unusual floating surface band with trivial topology. Here, we report quantum transport probing to ZrSiSe thin flakes and reveal transport signatures of this new surface state. Remarkably, though topologically trivial, such a surface band exhibit substantial two dimensional Shubnikov de Haas quantum oscillations with high mobility, which signifies a new protection mechanism and may open applications for surface-related devices.

preprint2016arXiv

Nano-scale Inhomogeneous Superconductivity in Fe(Te1-xSex) Probed by Nanostructure-transport

Among iron based superconductors, the layered iron chalcogenide Fe(Te1-xSex) is structurally the simplest and has attracted considerable attentions. It has been speculated from bulk studies that nanoscale inhomogeneous superconductivity may inherently exist in this system. However, this has not been directly observed from nanoscale transport measurements. In this work, through simple micromechanical exfoliation and high precision low-energy ion milling thinning, we prepared Fe(Te0.5Se0.5) nano-flake with various thickness and systematically studied the correlation between the thickness and superconducting phase transition. Our result revealed a systematic evolution of superconducting transition with thickness. When the thickness of Fe(Te0.5Se0.5) flake is reduced down to 12nm, i.e. the characteristic length of Te/Se fluctuation, the superconducting current path and the metallicity of normal state in Fe(Te0.5Se0.5) atomic sheets is suppressed. This observation provides the first direct transport evidence for the nano-scale inhomogeneous nature of superconductivity in Fe(Te1-xSex).

preprint2014arXiv

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical devices with acceptable performance still remains as a challenge. Employing tungsten disulfide multilayer thin crystals, we demonstrate that using gold as the only contact metal and choosing appropriate thickness of the crystal, high performance transistor with on/off ratio of $10^{8}$ and mobility up to $234\:cm^{2}V^{-1}s^{-1}$ at room temperature can be realized in a simple device structure. Further low temperature study revealed that the high performance of our device is caused by the minimized Schottky barrier at the contact and the existence of a shallow impurity level around 80 meV right below the conduction band edge. From the analysis on temperature dependence of field-effect mobility, we conclude that strongly suppressed phonon scattering and relatively low charge impurity density are the key factors leading to the high mobility of our tungsten disulfide devices.