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Researcher profile

Yulei Han

Yulei Han contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

8 published item(s)

preprint2024arXiv

Tunning the number of chiral edge channels in a fixed quantum anomalous Hall system

Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C >1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This newfound tunability offers extra dimension for the implementation of the QAH-based multi-channel dissipationless transport.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating Magnetization Orientation

Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$, monolayer transitional metal oxides, can realize QAHE with tunable Chern numbers via manipulating their magnetization orientations. When the magnetization lies in the \textit{x-y} plane and all mirror symmetries are broken, the low-Chern-number (i.e., $\mathcal{C}=\pm1$) phase emerges. When the magnetization exhibits non-zero \textit{z}-direction component, the system enters the high-Chern-number (i.e., $\mathcal{C}=\pm3$) phase, even in the presence of canted magnetization. The global band gap can approach the room-temperature energy scale in monolayer PdSbO$_3$ (23.4 meV), when the magnetization is aligned to \textit{z}-direction. By using Wannier-based tight-binding model, we establish the phase diagram of magnetization induced topological phase transition. Our work provides a high-temperature QAHE system with tunable Chern number for the practical electronic application.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pressure-induced dimensional crossover in a kagome superconductor

The recently discovered kagome superconductors AV3Sb5 exhibit tantalizing high-pressure phase diagrams, in which a new dome-like superconducting phase emerges under moderate pressure. However, its origin is as yet unknown. Here, we carried out the high-pressure electrical measurements up to 150 GPa, together with the high-pressure X-ray diffraction measurements and first-principles calculations on CsV3Sb5. We find the new superconducting phase to be rather robust and inherently linked to the interlayer Sb2-Sb2 interactions. The formation of Sb2-Sb2 bonds at high pressure tunes the system from two-dimensional to three-dimensional and pushes the Pz orbital of Sb2 upward across the Fermi level, resulting in enhanced density of states and increase of TC. Our work demonstrates that the dimensional crossover at high pressure can induce a topological phase transition and is related to the abnormal high-pressure TC evolution. Our findings should apply for other layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Realizing Kagome Band Structure in Two-Dimensional Kagome Surface States of $RV_{6}Sn_{6}$ ($R$=Gd,Ho)

We report angle resolved photoemission experiments on a newly discovered family of kagome metals $RV_{6}Sn_{6}$ ($R$=Gd, Ho). Intrinsic bulk states and surface states of the vanadium kagome layer are differentiated from those of other atomic sublattices by the real-space resolution of the measurements with a small beam spot. Characteristic Dirac cone, saddle point and flat bands of the kagome lattice are observed. Our results establish the two-dimensional (2D) kagome surface states as a new platform to investigate the intrinsic kagome physics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Berry-Curvature Exchange Induced Anderson Localization in Large-Chern-Number Quantum Anomalous Hall Effect

We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $\mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $\mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${\mathcal{C}}={\mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${\mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mesoscopic Electronic Transport in Twisted Bilayer Graphene

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene leads to upper and lower graphene layers separately, we explore systematically the dependence of electronic transport on the twist angle, Fermi energy, system size, layer stacking order and twist axis. When choose different twist axes for either AA- or AB-stacked bilayer graphene, we find that the dependence of conductance on twist angle displays qualitatively distinction, i.e., the systems with "top" axis exhibit finite conductance oscillating as a function of the twist angle, while the ones with "hollow" axis exhibit nearly vanishing conductance for different twist angles or Fermi energies near the charge neutrality point. These findings suggest that the choice of twist axis can effectively tune the interlayer conductance, making it a crucial factor in designing of nanodevices with the twisted van der Waals multilayers.

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preprint2019arXiv

Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators

Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3$ exhibits long-range ferromagnetism and preserve large bulk band gap. We further show that its corresponding thin-film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than the typical temperatures in similar systems. Our proposed \textit{nonmagnetic} doping scheme may shed new light in experimental realization of high-temperature QAHE in topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at $T_{\rm C}=42~\rm K$ when a five-quintuple-layer Sb$_2$Te$_3$ topological insulator is inserted into two septuple-layer MnBi$_2$Te$_4$ with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that MnBi$_2$Te$_4$/Sb$_2$Te$_3$/MnBi$_2$Te$_4$ heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of $\mathcal{C}=1$. In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge-compensation, originating from the intrinsic n-type defects in MnBi$_2$Te$_4$ and p-type defects in Sb$_2$Te$_3$.

0 citations0 reviewsNo code linkedOpen access