Researcher profile

Junjie Zeng

Junjie Zeng contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

PACE: Parameter Change for Unsupervised Environment Design

Unsupervised Environment Design (UED) offers a promising paradigm for improving reinforcement learning generalization by adaptively shaping training environments, but it requires reliable environment evaluation to remain effective. However, existing UED methods evaluate environments using indirect proxy signals such as regret, value-based errors, or Monte Carlo, which suffer from bias, high variance, or substantial computational overhead and fail to reflect agent realized learning progress. To address these limitations, we propose Parameter Change Environment Design (PACE), which evaluates an environment through the policy parameter change induced by training on that environment, directly grounding environment selection in realized learning progress. Specifically, PACE assigns environment value using a first-order approximation of the policy optimization objective, where the improvement induced by an environment is proportional to the squared L2 norm of the corresponding parameter update, enabling low-variance and computation-efficient evaluation without additional rollouts. Experiments on MiniGrid and Craftax show that PACE consistently outperforms established UED baselines, achieving higher IQM and smaller Optimality Gap on OOD evaluations, including an IQM of 96.4% and an Optimality Gap of 17.2% on MiniGrid.

preprint2020arXiv

Berry-Curvature Exchange Induced Anderson Localization in Large-Chern-Number Quantum Anomalous Hall Effect

We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $\mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $\mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${\mathcal{C}}={\mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${\mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.

preprint2019arXiv

Mesoscopic Electronic Transport in Twisted Bilayer Graphene

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene leads to upper and lower graphene layers separately, we explore systematically the dependence of electronic transport on the twist angle, Fermi energy, system size, layer stacking order and twist axis. When choose different twist axes for either AA- or AB-stacked bilayer graphene, we find that the dependence of conductance on twist angle displays qualitatively distinction, i.e., the systems with "top" axis exhibit finite conductance oscillating as a function of the twist angle, while the ones with "hollow" axis exhibit nearly vanishing conductance for different twist angles or Fermi energies near the charge neutrality point. These findings suggest that the choice of twist axis can effectively tune the interlayer conductance, making it a crucial factor in designing of nanodevices with the twisted van der Waals multilayers.