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Yukiharu Takeda

Yukiharu Takeda appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

17 published item(s)

preprint2022arXiv

Electronic Structure of ThPd$_2$Al$_3$: an impact of the U $5f$ states in the electronic structure of UPd$_2$Al$_3$

The electronic structure of ThPd$_2$Al$_3$, which is isostructural to the heavy fermion superconductor UPd$_2$Al$_3$, was investigated by photoelectron spectroscopy. The band structure and Fermi surfaces of ThPd$_2$Al$_3$ were obtained by angle-resolved photoelectron spectroscopy (ARPES), and the results were well-explained by the band-structure calculation based on the local density approximation. The comparison between the ARPES spectra and the band-structure calculation suggests that the Fermi surface of ThPd$_2$Al$_3$ mainly consists of the Al $3p$ and Th $6d$ states with a minor contribution from the Pd $4d$ states. The comparison of the band structures between ThPd$_2$Al$_3$ and UPd$_2$Al$_3$ argues that the U $5f$ states form Fermi surfaces in UPd$_2$Al$_3$ through hybridization with the Al $3p$ state in the Al layer, suggesting that the Fermi surface of UPd$_2$Al$_3$ has a strong three-dimensional nature.

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preprint2022arXiv

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too.

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preprint2022arXiv

Magnetoelastic anisotropy in Heusler-type Mn$_{2-δ}$CoGa$_{1+δ}$ films

Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-δ}$CoGa$_{1+δ}$ (MCG) with a small off-stoichiometry ($δ$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy constant ($K_\mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_\mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_\mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($Δm_\mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $K_\mathrm{u}$. Our first principles calculation reasonably explained the small $Δm_\mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_\mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin--orbit coupling, claiming that the mixing of the occupied $\uparrow$- and the unoccupied $\downarrow$-spin states is responsible for the PMA of the MCG films.

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preprint2021arXiv

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.

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preprint2020arXiv

Evolution of the Fe-3$d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the Fe-3$d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$d$ partial density of states and the first-principles calculations suggests that the Fe-3$d$ IB originates from the minority-spin ($\downarrow$) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb.

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preprint2020arXiv

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.

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preprint2019arXiv

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

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preprint2019arXiv

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.

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preprint2016arXiv

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.

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preprint2015arXiv

Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy

The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.

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preprint2015arXiv

Gradual localization of 5f states in orthorhombic UTX ferromagnets - polarized neutron diffraction study of Ru substituted UCoGe

We report on a microscopic study of the evolution of ferromagnetism in the Ru substituted ferromagnetic superconductor (FM SC) UCoGe crystallizing in the orthorhombic TiNiSi-type structure. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge have been prepared and characterized by magnetization, AC susceptibility, specific heat and electrical resistivity measurements. Both compounds have been found to order ferromagnetically below TC = 6.5 K and 7.5 K, respectively, which is considerably higher than the TC = 3 K of the parent compound UCoGe. The higher values of TC are accompanied by enhanced values of the spontaneous moment mspont. = 0.11 mB/f.u. and mspont. = 0.21 mB/f.u., respectively in comparison to the tiny spontaneous moment of UCoGe (about 0.07mB/f.u.). No sign of superconductivity was detected in either compound. The magnetic moments of the samples were investigated on the microscopic scale using polarized neutron diffraction (PND) and for UCo0.88Ru0.12Ge also by soft X-ray magnetic circular dichroism (XMCD). The analysis of the PND results indicates that the observed enhancement of ferromagnetism is mainly due to the growth of the orbital part of the uranium 5f moment mL(U), reflecting a gradual localization of the 5f electrons with Ru substitution. In addition, the parallel orientation of the U and Co moments has been established in both substituted compounds. The results are discussed and compared with related isostructural ferromagnetic UTX compounds (T - transition metals, X - Si, Ge) in the context of a varying degree of the 5f-ligand hybridization.

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preprint2015arXiv

Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-blende-type InAs lattice. The magnetization curves of Fe measured by XMCD were well reproduced by the superposition of a Langevin function representing superparamagnetic (SPM) behavior of nano-scale ferromagnetic domains and a T-linear function representing Curie-Weiss paramagnetism even much above the Curie temperatures. The data at 20 K showed a deviation from the Langevin behavior, suggesting a gradual establishment of macroscopic ferromagnetism on lowering temperature. The existence of nano-scale ferromagnetic domains indicated by the SPM behavior suggests spatial fluctuations of Fe concentration on the nano-scale.

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preprint2015arXiv

Polarized neutron diffraction and X-ray magnetic circular dichroism study of Ru doped UCoGe

We report on microscopic study of the ferromagnetism enhancement in the Ru doped ferromagnetic superconductor (FM SC) UCoGe. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge were prepared. Both single crystals were investigated by polarized neutron diffraction (PND) at low temperatures in magnetic fields and the latter one also by the soft X-ray magnetic circular dichroism (XMCD) method. UCo0.96Ru0.03Ge and UCo0.88Ru0.12Ge have been found ordering ferromagnetically below the Curie temperature TC = 6 K and 8.5 K, respectively, which are considerable higher than TC = 3 K of UCoGe. The increase of TC is accompanied by enhancement of the spontaneous moment to ms = 0.11 mB/f.u. and ms = 0.21 mB/f.u., respectively. The analysis of the PND results assigns the ferromagnetism enhancement mainly to the growth of the orbital part of uranium 5 f moment. In contrast to the published results of PND study of the parent UCoGe, we have found parallel orientation of the U and Co moments in both doped compounds. Evolution of magnetic characteristics with Ru concentration is discussed within a scenario considering the varying 5 f-ligand hybridization as the key mechanism.

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preprint2014arXiv

Itinerant magnetism in URhGe revealed by angle resolved photoelectron spectroscopy

The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure calculation treating all U 5f electrons as being itinerant, suggesting that an itinerant description of U 5f states is a good starting point for this compound. On the other hand, there are qualitative disagreements especially in the band structure near the Fermi level (E_B < 0.5 eV). The experimentally observed bands are less dispersive than the calculation, and the shape of the Fermi surface is different from the calculation. The changes in spectral functions due to the ferromagnetic transition were observed in bands near the Fermi level, suggesting that the ferromagnetism in this compound has an itinerant origin.

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preprint2014arXiv

Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films studied by x-ray magnetic circular dichroism

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn valence abruptly decreased towards Mn$^{3+}$. These observations suggest that the ferromagnetic phase gradually and most likely inhomogeneously turns into the paramagnetic phase and both phases abruptly become insulating at the critical thickness.

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preprint2013arXiv

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.

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preprint2011arXiv

Electronic Structure of Heavy Fermion Uranium Compounds Studied by Core-Level Photoelectron Spectroscopy

High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and high-binding energy satellite structure recognized in the core-level spectra of uranium compounds, a shoulder structure on the lower binding energy side of the main lines of localized and nearly localized uranium compounds was also found. The spectral line shapes show a systematic variation depending on the U 5f electronic structure. The core-level spectra of UGe2, UCoGe, URhGe, URu2Si2, and UNi2Al3 are rather similar to those of itinerant compounds, suggesting that U 5f electrons in these compounds are well hybridized with ligand states. On the other hand, the core-level spectra of UPd2Al3 and UPt3 show considerably different spectral line shapes from those of the itinerant compounds, suggesting that U 5f electrons in UPd2Al3 and UPt3 are less hybridized with ligand states, leading to the correlated nature of U 5f electrons in these compounds. The dominant final state characters in their core-level spectra suggest that the numbers of 5f electrons in UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, and UPd2Al3 are close to but less than three, while that of UPt3 is close to two rather than to three.

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