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Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of $R$ against $B$ is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann's equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling.
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting channel. Recently, our group found giant proximity magnetoresistance (PMR), which is caused by MPE at an interface between a non-magnetic semiconductor InAs quantum well (QW) layer and a ferromagnetic semiconductor (Ga,Fe)Sb layer. The MPE in the non-magnetic semiconductor can be modulated by applying a gate voltage and controlling the penetration of the electron wavefunction in the InAs QW into the neighboring insulating ferromagnetic (Ga,Fe)Sb layer. However, optimal conditions to obtain strong MPE at the InAs/(Ga,Fe)Sb interface have not been clarified. In this paper, we systematically investigate the PMR properties of In1-xGaxAs (x = 0%, 5%, 7.5%, and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide range of gate voltage. The inclusion of Ga alters the electronic structures of the InAs thin film, in particular changing the effective mass and the QW potential of electron carriers. Our experimental results and theoretical analysis of the PMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE depends not only on the degree of penetration of the electron wavefunction into (Ga,Fe)Sb but also on the electron density. These findings help us to unveil the microscopic mechanism of MPE in semiconductor-based non-magnetic/ferromagnetic heterojunctions.
The two-dimensional electron gas formed at interfaces between SrTiO$_3$ and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has been attributed to their complicated quantized multi-orbital structures with a topological feature. However, there are few reports quantitatively comparing the conversion efficiency values between experiments and theoretical calculations at these interfaces. In this study, we theoretically explain the experimental temperature dependence of the spin-to-charge current conversion efficiency using an 8x8 effective tight-binding model considering the second $d_{xy}$ subband, revealing the vital role of the quantization of the multi-band structure.
(Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the Fe-3$d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$d$ partial density of states and the first-principles calculations suggests that the Fe-3$d$ IB originates from the minority-spin ($\downarrow$) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb.
(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The magnetoresistance ratio of the spin MOSFET with a channel length of 0.4$μ$m was increased by a factor of 6 from that in our previous paper [Phys. Rev. B 99, 165301 (2019)] by lowering the parasitic resistances at the source/drain junctions with highly-phosphorus-doped n+-Si regions and by increasing the lateral electric field in the channel along the electron transport, called "spin drift". Clear Hanle signals with some oscillation peaks were observed for the spin MOSFET with a channel length of 10 $μ$ m under the lateral electric field, indicating that the effective spin diffusion length is dramatically enhanced by the spin drift. By taking into account the n+-Si regions and the spin drift in the channel, one-dimensional analytic functions were derived for analyzing the effect of the spin drift on the spin transport through the channel and these functions were found to explain almost all the experimental results. From the calculated spin current and spin distribution, it was revealed that almost all the spins are unflipped during the spin-drift-assisted transport through the 0.4-$μ$m-long inversion channel, but the most part of the injected spins from the source electrode are relaxed in the n+-Si regions of both the source and drain junctions. This means that the spin drift is useful and precise design of the device structure is essential to obtain a higher magnetoresistance ratio. Furthermore, we showed that the effective spin resistances that are introduced in this study are very helpful to understand how to improve the magnetoresistance ratio of spin MOSFETs for practical use.
We demonstrate efficient intrinsic spin-to-charge current conversion in a two-dimensional electron gas using an all-epitaxial single-crystal heterostructure of LaSrMnO3/ LaAlO3 (LAO)/ SrTiO3 (STO), which can suppress spin scattering and give us an ideal environment to investigate intrinsic spin-charge conversion. With decreasing temperature to 20 K, the spin-to-charge conversion efficiency is drastically enhanced to +3.9 nm, which is the largest positive value ever reported for LAO/STO. Our band-structure calculation well reproduces this behavior and predicts further enhancement by controlling the density and relaxation time of the carriers.
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed clear magnetoresistance (MR) ratio up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lateral ferromagnetic metal / semiconductor / ferromagnetic metal spin-valve devices reported so far.
We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR) (~80% at 14 T). This PMR is two orders of magnitude larger than the MR observed in NM/FM bilayers reported to date, and its magnitude can be controlled by a gate voltage. These results are explained by the penetration of the InAs two-dimensional-electron wavefunction into (Ga,Fe)Sb. The ability to strongly modulate the NM channel current by both electrical and magnetic gating represents a new concept of magnetic-gating spin transistors.
Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.
Large spin splitting in the conduction band (CB) and valence band (VB) of ferromagnetic semiconductors (FMSs), predicted by the influential mean-field Zener model[1,2] and assumed in many spintronic device proposals[3-8], has never been observed in the mainstream p-type Mn-doped FMSs[9-15]. Here using tunnelling spectroscopy in Esaki-diode structures, we report the observation of such a large spontaneous spin-splitting energy (ΔE = 31.7 - 50 meV) in the CB bottom of n-type FMS (In,Fe)As, which is surprising considering the very weak s-d exchange interaction reported in several zinc-blende (ZB) type semiconductors[16,17]. The mean-field Zener model also fails to explain consistently the ferromagnetism and the spin splitting energy ΔE of (In,Fe)As, because we found that the Curie temperature (TC) values calculated using the observed ΔE are much lower than the experimental TC by a factor of 400. These results urge the need for a more sophisticated theory of FMSs. Furthermore, bias-dependent tunnelling anisotropic magnetoresistance (TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As band structure [CB, VB, and impurity band (IB)]. The results suggest that the energy range of IB overlaps with the CB bottom or VB top, which may be important to understand the strong s-d exchange interaction in (In,Fe)As[18,19].
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the Fermi level is located in two overlapping largely spin-polarized bands formed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t2) band. Thus, it is important to clarify how these bands contribute to spin injection and detection. In this study, we show the first successful observation of the tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed of epitaxially grown Fe/MgO/Ge0.935Fe0.065. We find that the p-d(t2) band in GeFe is mainly responsible for the tunneling transport. Although the obtained TMR ratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressing leak current through amorphous-like crystal domains observed in MgO.
We investigate the crystal structure, transport and magnetic properties of Fe-doped ferromagnetic semiconductor (Al1-x,Fex)Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al1-x,Fex)Sb thin films with x lower or equal to 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al1-x,Fex)Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (TC) of 40 K. In the (Al1-x,Fex)Sb thin film with x = 14%, a sudden drop of mobility and TC was observed, which may be due to microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices.
In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-blende-type InAs lattice. The magnetization curves of Fe measured by XMCD were well reproduced by the superposition of a Langevin function representing superparamagnetic (SPM) behavior of nano-scale ferromagnetic domains and a T-linear function representing Curie-Weiss paramagnetism even much above the Curie temperatures. The data at 20 K showed a deviation from the Langevin behavior, suggesting a gradual establishment of macroscopic ferromagnetism on lowering temperature. The existence of nano-scale ferromagnetic domains indicated by the SPM behavior suggests spatial fluctuations of Fe concentration on the nano-scale.
We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the electron wavefunctions ϕi in the QW, such that the overlap of ϕi and the (In,Fe)As layer is modified. The Curie temperature is largely changed by 42%, whereas the change in sheet carrier concentration is 2 - 3 orders of magnitude smaller than that of previous gating experiments. This result provides a new approach for versatile, low power, and ultrafast manipulation of magnetization.
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current IDS by ~+ or -0.5 % with a gate-source voltage of + or -10.8 V and also modulate IDS by up to 60 % with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.
We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie temperature of the Ge0.895Fe0.105 film up to ~220 K while keeping a single ferromagnetic phase when the annealing temperature is lower than 500°C. In contrast, when annealed at 600°C, single-crystal GeFe nano-particles with stacking faults and twins, which have a high Curie temperature nearly up to room temperature, are formed in the film. Our results show that annealing is quite effective to improve the magnetic properties of GeFe for high-temperature-operating spin-injection devices based on Si or Ge.
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (~5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge1-xFex films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge1-xFex from ~1018 cm-3 to ~1020 cm-3 (x = 1.0%) and to ~1019 cm-3 (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.
We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant, Curie temperature (TC), and Fe-atom locations. While TC strongly depends on the growth temperature, we find a universal relationship between TC and the lattice constant, which does not depend on the Fe content x. By using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, it is clarified that about 15% of the Fe atoms exist in the tetrahedral interstitial sites in the Ge0.935Fe0.065 lattice and that the substitutional Fe concentration is not correlated with TC. Considering these results, we suggest that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe.
We demonstrated the control of ferromagnetism in a surface quantum well containing a 5-nm-thick n-type ferromagnetic semiconductor (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie temperature (Tc) of the (In,Fe)As layer was effectively changed by up to 12 K (ΔTc/Tc = 55%). Our calculation using the mean-field Zener theory reveals an unexpectedly large s-d exchange interaction in (In,Fe)As. Our results establish an effective way to control the ferromagnetism in quantum heterostructures of n-type FMSs, as well as require reconsideration on the current understanding of the s-d exchange interaction in narrow gap FMSs.
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.
(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.
We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)As ferromagnetic semiconductor (FMS) layers grown on semi-insulating GaAs substrates. In a 10 nm-thick (In,Fe)As layer which is insulating at low temperature, we observed crystalline AMR with two-fold and eight-fold symmetries. In a metallic 100 nm-thick (In,Fe)As layer with higher electron concentration, only two-fold symmetric crystalline AMR was observed. Our results demonstrate the macroscopic ferromagnetism in (In,Fe)As with magnetic anisotropy that depends on the electron concentration. Non-crystalline AMR is also observed in the 100 nm-thick layer, but its magnitude is as small as 10^-5, suggesting that there is no s-d scattering near the Fermi level of (In,Fe)As. We propose the origin of the eight-fold symmetric crystalline anisotropy in (In,Fe)As.
Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-equilibrium conditions allows engineering of new materials with their atomically-flat interfaces in the heterostructures exhibiting novel physical properties. From a fundamental point of view, knowledge of the electronic structures of thin films and their interfaces is indispensable to understand the origins of their functionality which further evolves into realistic device application. In view of extreme surface sensitivity of the conventional vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES), with a probing depth of several angstroms, experiments on thin films have to use sophisticated in-situ sample transfer systems to avoid surface contamination. In this Letter, we put forward a method to circumvent these difficulties using soft X-ray (SX) ARPES. A GaAs:Be thin film in our samples was protected by an amorphous As layer with an thickness of $\sim 1$ nm exceeding the probing depth of the VUV photoemission with photon energy $hν$ around 100 eV. The increase of the probing depth with increasing $hν$ towards the SX region has clearly exposed the bulk band dispersion without any surface treatment. Any contributions from potential interface states between the thin film and the amorphous capping layer has been below the detection limit. Our results demonstrate that SX-ARPES enables the observation of coherent three-dimensional band dispersion of buried heterostructure layers through an amorphous capping layer, breaking through the necessity of surface cleaning of thin film samples. Thereby, this opens new frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn)As (III: In and Ga), we perform systematic experiments of the resonant tunneling spectroscopy on [(In_0.53Ga_0.47)_1-x Mn_x]As (x=0.06-0.15) and In_0.87Mn_0.13As grown on AlAs/ In_0.53Ga_0.47As:Be/ p+InP(001). We show that the valence band of InGaMnAs almost remains unchanged from that of the host semiconductor InGaAs, that the Fermi level exists in the band gap, and that the p-d exchange splitting in the valence band is negligibly small in (InGaMn)As. In the In0.87Mn0.13As sample, although the resonant peaks are very weak due to the large strain induced by the lattice mismatch between InP and InMnAs, our results also indicate that the Fermi level exists in the band gap and that the p-d exchange splitting in the valence band is negligibly small. These results are quite similar to those of GaMnAs obtained by the same method, meaning that there are no holes in the valence band, and that the impurity-band holes dominate the transport and magnetism both in the InGaMnAs and In_0.87Mn_0.13As films. This band picture of (III,Mn)As is remarkably different from that of II-VI-based diluted magnetic semiconductors.
We comment on the recent paper "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in the d2I/dV2-V characteristics in our studies on the resonant tunneling spectroscopy on GaMnAs, are not attributed to the resonant levels in the GaMnAs layer but to the two-dimensional interfacial subbands in the GaAs:Be layer. Here, we show that this interpretation is not able to explain our experimental results and our conclusions remain unchanged.
We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on nonlocal signals when the in-plane device structure is not optimized. Moreover, realization of a pure spin current by spin diffusion was found to be virtually impossible because of the electric potential distribution in the depth direction in the Si channel. Although apparent signals indicating the spin-valve effect were not detected, we mainly present structural influence on the electric potential distribution which is indispensable for the analyses of spin-dependent transport.
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by electrical gating or light irradiation, while fully inheriting the advantages of semiconductor materials such as band engineering. Prototype FMSs such as (In,Mn)As or (Ga,Mn)As, however, are always p-type, making it difficult to be used in real spin devices. This is because manganese (Mn) atoms in those materials work as local magnetic moments and acceptors that provide holes for carrier-mediated ferromagnetism. Here we show that by introducing iron (Fe) into InAs, it is possible to fabricate a new FMS with the ability to control ferromagnetism by both Fe and independent carrier doping. Despite the general belief that the tetrahedral Fe-As bonding is antiferromagnetic, we demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS, a missing piece of semiconductor spintronics for decades. This achievement opens the way to realise novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with the magnetization-related resistance change resulting from the MnAs contacts, we conclude that the spin-polarized electrons are injected from the MnAs source into the Si MOS inversion channel, and detected by the MnAs drain.
The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is still controversial due to the insufficient understanding of its band structure and Fermi level position. Here, we show the universal valence-band (VB) picture of GaMnAs obtained by resonant tunneling spectroscopy for a variety of surface GaMnAs layers with the Mn concentrations from 6 to 15% and the Curie temperatures from 71 to 154 K. We find that the Fermi level exists in the bandgap, and that the VB structure of GaAs is almost perfectly maintained in all the GaMnAs samples, i.e. VB is not merged with the impurity band. Furthermore, the p-d exchange splitting of VB is found to be quite small (only several meV) even in GaMnAs with a high Curie temperature (154 K). These results indicate that the VB structure of GaMnAs is quite insensitive to the Mn doping.
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 meV. We observe tunneling magnetoresistance (TMR) ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-based MTJs with other barrier materials in the same temperature region. These high TMR ratios can be mainly attributed to the relatively high crystal quality of AlMnAs and the suppression of the tunneling probability near at the in-plane wave-vector k||=0.
We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels and modulate the spin-dependent current with varying the voltage of the electrode connected to the GaMnAs QW. Our results will open up a new possibility for realizing three-terminal spin resonant-tunneling devices.
We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150-190 degree C and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism (MCD) and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170 K.