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Atsushi Fujimori

Atsushi Fujimori appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hall

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Published work

22 published item(s)

preprint2021arXiv

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.

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preprint2021arXiv

Selective observation of surface and bulk bands in polar WTe2 by laser-based spin- and angle-resolved photoemission spectroscopy

The electronic state of WTe2, a candidate of type-II Weyl semimetal, is investigated by using laser-based spin- and angle-resolved photoemission spectroscopy (SARPES). We prepare the pair of WTe2 samples, one with (001) surface and the other with (00-1) surface, by "sandwich method", and measure the band structures of each surface separately. The Fermi arcs are observed on both surfaces. We identify that the Fermi arcs on the two surfaces are both originating from surface states. We further find a surface resonance band, which connects with the Fermi-arc band, forming a Dirac-cone-like band dispersion. Our results indicate that the bulk electron and hole bands are much closer in momentum space than band calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic spin distribution and perpendicular magnetic anisotropy in the layered ferromagnetic semiconductor (Ba,K)(Zn,Mn)$_{2}$As$_{2}$

Perpendicular magnetic anisotropy of the new ferromagnetic semiconductor (Ba,K)(Zn,Mn)$_{2}$As$_{2}$ is studied by angle-dependent x-ray magnetic circular dichroism measurements. The large magnetic anisotropy with the anisotropy field of 0.85 T is deduced by fitting the Stoner-Wohlfarth model to the magnetic-field-angle dependence of the projected magnetic moment. Transverse XMCD spectra highlights the anisotropic distribution of Mn 3$d$ electrons, where the $d_{xz}$ and $d_{yz}$ orbitals are less populated than the $d_{xy}$ state because of the $D_{2d}$ splitting arising from the elongated MnAs$_{4}$ tetrahedra. It is suggested that the magnetic anisotropy originates from the degeneracy lifting of $p$-$d_{xz}$, $d_{yz}$ hybridized states at the Fermi level and resulting energy gain due to spin-orbit coupling when spins are aligned along the $z$ direction.

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preprint2020arXiv

Evolution of the Fe-3$d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the Fe-3$d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$d$ partial density of states and the first-principles calculations suggests that the Fe-3$d$ IB originates from the minority-spin ($\downarrow$) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb.

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preprint2020arXiv

Hard and soft x-ray photoemission spectroscopy study of the new Kondo system SmO thin film

SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed valence. The valence-band photoemission spectra exhibit a clear Fermi edge originating from the Sm 5$d$-derived band. The present finding is consistent with the theory suggesting a possible topological state in SmO and show that rare-earth monoxides or their heterostructures can be a new playground for the interplay of strong electron correlation and spin-orbit coupling.

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preprint2020arXiv

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.

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preprint2020arXiv

Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD

Perovskite-type manganites, which are well-known for their intriguing physical properties such as colossal magnetoresistance (CMR) and half metalicity, have been considered as candidate materials for spintronics. However, their ferromagnetic (FM) properties are often suppressed in thin films when the thickness is reduced down to several monolayers (MLs). In order to investigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM phase transition boundary, we have performed temperature-dependent x-ray magnetic circular dichroism (XMCD) experiments on a La$_{1-x}$Sr$_{x}$MnO$_3$ (LSMO, $x=0.4$) thin film, whose thickness (8 ML) is close to the boundary between the FM-metallic and the PM-insulating phases. By utilizing the element-selectiveness of XMCD, we have quantitatively estimated the fractions of the PM and superparamagnetic (SPM) phases as well as the FM one as a function of temperature. The results can be reasonably described based on a microscopic phase-separation model.

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preprint2019arXiv

Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers

We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir multilayers and asymmetric Pt/Co/Ir, Ir/Co/Pt multilayers. First, the interface contribution to the PMA is studied using the Co layer thickness dependence of the effective PMA energy. Comparison of the interfacial PMA between the Ir/Co/Pt, Pt/Co/Ir asymmetric structures and Pt/Co/Pt, Ir/Co/Ir symmetric structures indicate that the broken structural inversion symmetry induced PMA is small compared to the overall interfacial PMA. Second, we find the magnetic anisotropy field is significantly increased in multilayers when the ferromagnetic layers are antiferromagnetically coupled via interlayer exchange coupling (IEC). Macrospin model calculations can qualitatively account for the relation between the anisotropy field and the IEC. Among the structures studied, IEC is the largest for the asymmetric Ir/Co/Pt multilayers: the exchange coupling field exceeds 3 T and consequently, the anisotropy field approaches 10 T. Third, comparing the asymmetric Ir/Co/Pt and Pt/Co/Ir structures, we find the IEC and, to some extent, the interface PMA are stronger for the former than the latter. X-ray magnetic circular dichroism studies suggest that the proximity induced magnetization in Pt is larger for the Ir/Co/Pt multilayers than the inverted structure, which may partly account for the difference in the magnetic properties. These results show the intricate relation between PMA, IEC and the proximity induced magnetization that can be exploited to design artificial structures with unique magnetic characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.

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preprint2016arXiv

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.

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preprint2016arXiv

Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning

Metal-to-insulator transitions (MITs) are a dramatic manifestation of strong electron correlations in solids1. The insulating phase can often be suppressed by quantum tuning, i.e. varying a nonthermal parameter such as chemical composi- tion or pressure, resulting in a zero-temperature quantum phase transition (QPT) to a metallic state driven by quantum fluctuations, in contrast to conventional phase transitions driven by thermal fluctuations. Theories of exotic phenomena known to occur near the Mott QPT such as quantum criticality and high-temperature superconductivity often assume a second-order QPT, but direct experimental evidence for either first- or second-order behavior at the magnetic QPT associated with the Mott transition has been scarce and further masked by the superconducting phase in unconventional superconductors. Most measurements of QPTs have been performed by volume-integrated probes, such as neutron scattering, magnetization, and transport, in which discontinuous behavior, phase separation, and spatially inhomogeneous responses are averaged and smeared out, leading at times to misidentification as continuous second-order transitions. Here, we demonstrate through muon spin relaxation/rotation (MuSR) experiments on two archetypal Mott insulating systems, composition-tuned RENiO3 (RE=rare earth element) and pressured-tuned V2O3, that the QPT from antiferromagnetic insulator to paramagnetic metal is first-order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value across the phase diagram until it is suddenly destroyed at the QPT. These findings call for further investigation into the role of inelastic soft modes and the nature of dynamic spin and charge fluctuations underlying the transition.

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preprint2015arXiv

Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy

The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.

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preprint2015arXiv

Isotropic Kink and Quasiparticle Excitations in the Three-Dimensional Perovskite Manganite La$_{0.6}$Sr$_{0.4}$MnO$_3$

In order to reveal many-body interactions in the three-dimensional (3D) perovskite manganite, we have performed an $in$ $situ$ angle-resolved photoemission spectroscopy (ARPES) on La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO) and investigated the behaviors of quasiparticles. We observe quasiparticle peaks around the Fermi momentum, both in the electron and the hole bands, and clear kinks throughout the hole Fermi surface in the ARPES band dispersion. The isotropic behavior sharply contrasts to the strong anisotropic quasiparticle excitation observed in layered manganites. These results suggest that polaronic quasiparticles by coupling of the electrons with Jahn-Teller phonons play an important role in the physical properties of the ferromagnetic metallic phase in 3D manganite LSMO.

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preprint2015arXiv

Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-blende-type InAs lattice. The magnetization curves of Fe measured by XMCD were well reproduced by the superposition of a Langevin function representing superparamagnetic (SPM) behavior of nano-scale ferromagnetic domains and a T-linear function representing Curie-Weiss paramagnetism even much above the Curie temperatures. The data at 20 K showed a deviation from the Langevin behavior, suggesting a gradual establishment of macroscopic ferromagnetism on lowering temperature. The existence of nano-scale ferromagnetic domains indicated by the SPM behavior suggests spatial fluctuations of Fe concentration on the nano-scale.

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preprint2014arXiv

Itinerant magnetism in URhGe revealed by angle resolved photoelectron spectroscopy

The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure calculation treating all U 5f electrons as being itinerant, suggesting that an itinerant description of U 5f states is a good starting point for this compound. On the other hand, there are qualitative disagreements especially in the band structure near the Fermi level (E_B < 0.5 eV). The experimentally observed bands are less dispersive than the calculation, and the shape of the Fermi surface is different from the calculation. The changes in spectral functions due to the ferromagnetic transition were observed in bands near the Fermi level, suggesting that the ferromagnetism in this compound has an itinerant origin.

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preprint2014arXiv

Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films studied by x-ray magnetic circular dichroism

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn valence abruptly decreased towards Mn$^{3+}$. These observations suggest that the ferromagnetic phase gradually and most likely inhomogeneously turns into the paramagnetic phase and both phases abruptly become insulating at the critical thickness.

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preprint2013arXiv

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.

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preprint2012arXiv

Itinerant Nature of U 5f States in Uranium Mononitride UN Revealed by Angle Resolved Photoelectron Spectroscopy

The electronic structure of the antiferromagnet uranium nitride (UN) has been studied by angle resolved photoelectron spectroscopy using soft X-rays (hn=420-520 eV). Strongly dispersive bands with large contributions from the U 5f states were observed in ARPES spectra, and form Fermi surfaces. The band structure as well as the Fermi surfaces in the paramagnetic phase are well explained by the band-structure calculation treating all the U 5f electrons as being itinerant, suggesting that itinerant description of the U 5f states is appropriate for this compound. On the other hand, changes in the spectral function due to the antiferromagnetic transition were very small. The shapes of the Fermi surfaces in a paramagnetic phase are highly three-dimensional, and the nesting of Fermi surfaces is unlikely as the origin of the magnetic ordering.

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preprint2012arXiv

Pseudogap, Superconducting Gap, and Fermi Arc in High-Tc Cuprates Revealed by Angle-Resolved Photoemission Spectroscopy

We present an overview of angle-resolved photoemission spectroscopy (ARPES) studies of high-temperature cuprate superconductors aiming at elucidating the relationship between the superconductivity, the pseudogap, and the Fermi arc. ARPES studies of underdoped samples show a momentum dependence of the energy gap below Tc which deviates from a simple d-wave form, suggesting the coexistence of multiple energy scales in the superconducting state. Hence, two distinct energy scales have been introduced, namely, the gap near the node (characterized by Delta_0) and in the anti-nodal region (characterized by Delta^*). Dichotomy between them has been demonstrated from the material, doping, and temperature dependence of the energy gap. While Delta^* at the same doping level is approximately material independent, Delta_0 shows a strong material dependence tracking the magnitude of Tc,max. The anti-nodal gap does not close at Tc in contrast to the gap near the node which follows something closer to a BCS-like temperature dependence. An effective superconducting gap Delta_sc defined at the end point of the Fermi arc is found to be proportional to Tc's in various materials.

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preprint2011arXiv

Electronic Structure of Heavy Fermion Uranium Compounds Studied by Core-Level Photoelectron Spectroscopy

High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and high-binding energy satellite structure recognized in the core-level spectra of uranium compounds, a shoulder structure on the lower binding energy side of the main lines of localized and nearly localized uranium compounds was also found. The spectral line shapes show a systematic variation depending on the U 5f electronic structure. The core-level spectra of UGe2, UCoGe, URhGe, URu2Si2, and UNi2Al3 are rather similar to those of itinerant compounds, suggesting that U 5f electrons in these compounds are well hybridized with ligand states. On the other hand, the core-level spectra of UPd2Al3 and UPt3 show considerably different spectral line shapes from those of the itinerant compounds, suggesting that U 5f electrons in UPd2Al3 and UPt3 are less hybridized with ligand states, leading to the correlated nature of U 5f electrons in these compounds. The dominant final state characters in their core-level spectra suggest that the numbers of 5f electrons in UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, and UPd2Al3 are close to but less than three, while that of UPt3 is close to two rather than to three.

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preprint2011arXiv

Two-Fermi-surface superconducting state and a nodal d-wave gap in the electron-doped Sm(1.85)Ce(0.15)CuO(4-d) cuprate superconductor

We report on laser-excited angle-resolved photoemission spectroscopy (ARPES) in the electron-doped cuprate Sm(1.85)Ce(0.15)CuO(4-d). The data show the existence of a nodal hole-pocket Fermi-surface both in the normal and superconducting states. We prove that its origin is long-range antiferromagnetism by an analysis of the coherence factors in the main and folded bands. This coexistence of long-range antiferromagnetism and superconductivity implies that electron-doped cuprates are two-Fermi-surface superconductors. The measured superconducting gap in the nodal hole-pocket is compatible with a d-wave symmetry.

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preprint2007arXiv

Itinerant to localized transition of f electrons in antiferromagnetic superconductor UPd2Al3

Electrons in solids have been conventionally classified as either band-like itinerant ones or atomic-like localized ones depending on their properties. For heavy Fermion (HF) compounds, however, the f electrons show both itinerant and localized behaviours depending on temperature. Above the characteristic temperature T*, which is typically of the order of few K to few tens K, their magnetic properties are well described by the ionic f-electron models, suggesting that the f-electrons behave as 'localized' electrons. On the other hand, well below T*, their Fermi surfaces (FS's) have been observed by magneto-oscillatory techniques, and generally they can be explained well by the 'itinerant' f-electron model. These two models assume totally different natures of felectrons, and how they transform between localized and itinerant state as a function of temperatures has never been understood on the level of their electronic structures. Here we have studied the band structure of the HF antiferromagnetic superconductor UPd2Al3 well below and above T* by angle-resolved photoelectron spectroscopy (ARPES), and revealed the temperature dependence of the electronic structure. We have found that the f-bands, which form the FS's at low temperatures are excluded from FS's at high temperatures. The present results demonstrate how the same f-electrons show both itinerant and localized behaviours on the level of electronic structure, and provide an important information for the unified description of the localized and itinerant nature of HF compounds.

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