Researcher profile

Yue-Yu Zhang

Yue-Yu Zhang contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2016arXiv

Novel Self-passivation Rule and Structure of CdTe sigma3 (112) Grain Boundary

The theoretical study of grain boundaries (GBs) in polycrystalline semiconductors is currently stalemated by their complicated nature, which is difficult to extract from any direct experimental characterization. Usually, coincidence-site-lattice (CSL) models are constructed simply by aligning two symmetric planes, ignoring various possible reconstructions. Here, we propose a general self-passivation rule to determine the low-energy GB reconstruction, and find new configurations for the CdTe sigma3 (112) GBs. First-principles calculations show that it has lower formation energies than the prototype GBs adopted widely in previous studies. Surprisingly, the reconstructed GBs show self-passivated electronic properties without deep-level states in the band gap. Based on the reconstructed configurations, we revisited the influence of CdCl2 post-treatment on the CdTe GBs, and found that the addition of both Cd and Cl atoms in the GB improves the photovoltaic properties by promoting self-passivation and inducing n-type levels, respectively. The present study provides a new route for further studies of GBs in covalent polycrystalline semiconductors and also highlights that previous studies on the GBs of multinary semiconductors which are based on the unreconstructed prototype GB models, should be revisited.

preprint2015arXiv

Structural Evolution and Optoelectronic Applications of Multilayer Silicene

Despite the recent progress on two-dimensional multilayer materials (2DMM) with weak interlayer interactions, the investigation on 2DMM with strong interlayer interactions is far from its sufficiency. Here we report on first-principles calculations that clarify the structural evolution and optoelectronic properties of such a 2DMM, multilayer silicene. With our newly developed global optimization algorithm, we discover the existence of rich dynamically stable multilayer silicene phases, the stability of which is closely related to the extent of sp3 hybridization that can be evaluated by the average bonds and effective bond angles. The stable Si(111) surface structures are obtained when the silicene thickness gets up to four, showing the critical thickness for the structural evolution. We also find that the multilayer silicene with pi-bonded surfaces present outstanding optoelectronic properties for the solar cells and optical fiber communications due to the incorporation of sp2-type bonds in the sp3-type bonds dominated system. This study is helpful to complete the picture of structure and related property evolution of 2DMM with strong interlayer interactions.

preprint2013arXiv

Prediction of (TiO2)x(Cu2O)y Alloys for Photoelectrochemical Water Splitting

The formation of (TiO2)x(Cu2O)y solid-solutions are investigated using a global optimization evolutionary algorithm. First-principles calculations based on density functional theory are then used to gain insight into the electronic properties of these alloys. We find that: (i) Ti and Cu in (TiO2)x(Cu2O)y alloys have similar local environments as in bulk TiO2 and Cu2O except for (TiO2)(Cu2O) which has some trigonal-planar Cu ions. (ii) The predicted optical band gaps are around 2.1 eV (590 nm), thus having much better performance for the absorption of visible light compared with both binary oxides. (iii) (TiO2)2(Cu2O) has the lowest formation energy amongst all studied alloys and the positions of its band edges are found to be suitable for solar-driven water splitting applications.

preprint2013arXiv

What Is Armchair-Zigzag Grain Boundary Structure in Graphene?

We have developed a new global optimization method for the determination of interface structure based on the differential evolution algorithm. Here, we applied this method to search for the ground state atomic structures of the grain boundary between the armchair and zigzag oriented graphene. We find two new grain boundary structures with considerably lower formation energy of about 1 eV/nm than that of the previously widely used structural models. These newly predicted structures show better mechanical property under external uniaxial strain, and distinguishable scanning tunneling microscope features, compared with the previous structural models. Our results provide important new information for the determination of grain boundary structures and henceforth the electronic properties of defected graphene.