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Xingao Gong

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Published work

15 published item(s)

preprint2022arXiv

Edge-based Tensor prediction via graph neural networks

Message-passing neural networks (MPNN) have shown extremely high efficiency and accuracy in predicting the physical properties of molecules and crystals, and are expected to become the next-generation material simulation tool after the density functional theory (DFT). However, there is currently a lack of a general MPNN framework for directly predicting the tensor properties of the crystals. In this work, a general framework for the prediction of tensor properties was proposed: the tensor property of a crystal can be decomposed into the average of the tensor contributions of all the atoms in the crystal, and the tensor contribution of each atom can be expanded as the sum of the tensor projections in the directions of the edges connecting the atoms. On this basis, the edge-based expansions of force vectors, Born effective charges (BECs), dielectric (DL) and piezoelectric (PZ) tensors were proposed. These expansions are rotationally equivariant, while the coefficients in these tensor expansions are rotationally invariant scalars which are similar to physical quantities such as formation energy and band gap. The advantage of this tensor prediction framework is that it does not require the network itself to be equivariant. Therefore, in this work, we directly designed the edge-based tensor prediction graph neural network (ETGNN) model on the basis of the invariant graph neural network to predict tensors. The validity and high precision of this tensor prediction framework were shown by the tests of ETGNN on the extended systems, random perturbed structures and JARVIS-DFT datasets. This tensor prediction framework is general for nearly all the GNNs and can achieve higher accuracy with more advanced GNNs in the future.

preprint2021arXiv

Complex Spin Hamiltonian Represented by Artificial Neural Network

The effective spin Hamiltonian method is widely adopted to simulate and understand the behavior of magnetism. However, the magnetic interactions of some systems, such as itinerant magnets, are too complex to be described by any explicit function, which prevents an accurate description of magnetism in such systems. Here, we put forward a machine learning (ML) approach, applying an artificial neural network (ANN) and a local spin descriptor to develop effective spin potentials for any form of interaction. The constructed Hamiltonians include an explicit Heisenberg part and an implicit non-linear ANN part. Such a method successfully reproduces artificially constructed models and also sufficiently describe the itinerant magnetism of bulk Fe3GeTe2. Our work paves a new way for investigating complex magnetic phenomena (e.g., skyrmions) of magnetic materials.

preprint2015arXiv

Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2 and Si6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

preprint2014arXiv

A Parallel Orbital-Updating Approach for Electronic Structure Calculations

In this paper, we propose an orbital iteration based parallel approach for electronic structure calculations. This approach is based on our understanding of the single-particle equations of independent particles that move in an effective potential. With this new approach, the solution of the single-particle equation is reduced to some solutions of independent linear algebraic systems and a small scale algebraic problem. It is demonstrated by our numerical experiments that this new approach is quite efficient for full-potential calculations for a class of molecular systems.

preprint2014arXiv

Self-regulation mechanism for charged point defects in hybrid halide perovskites

Hybrid halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) exhibit unusually low free carrier concentrations despite being processed at low-temperatures from solution. We demonstrate, through quantum mechanical calculations, that the origin of this phenomenon is a prevalence of ionic over electronic disorder in stoichiometric materials. Schottky defect formation provides a mechanism to self-regulate the concentration of charge carriers through ionic compensation of charged point defects. The equilibrium charged vacancy concentration is predicted to exceed 0.4% at room temperature. This behaviour, which goes against established defect conventions for inorganic semiconductors, has implications for photovoltaic performance.

preprint2014arXiv

Understanding the Magnetic Puzzles of Double Perovskites A2FeOsO6 (A=Ca, Sr)

Double perovskites Sr2FeOsO6 and Ca2FeOsO6 show puzzling magnetic properties, the former a low-temperature antiferromagnet while the later a high-temperature insulating ferrimagnet. Here, in order to understand the underlying mechanism, we have investigated the frustrated magnetism of A2FeOsO6 by employing density functional theory and maximally-localized Wannier functions. We find that lattice distortion enhances the antiferromagnetic nearest-neighboring Fe-O-Os interaction but weakens the antiferromagnetic interactions through the Os-O-O-Os and Fe-O-Os-O-Fe paths, which is responsible for the magnetic transition from the low-temperature antiferromagnetism to the high-temperature ferrimagnetism with the decrease of the radius of the A2+ ions. We also discuss the 5d3-3d5 superexchange and propose such superexchange is intrinsically antiferromagnetic instead of the expected ferromagnetic. Our work illustrate that the magnetic frustration can be effectively relieved by lattice distortion, which provides another dimension to tune the complex magnetism in other 3d-5d (4d) double perovskites.

preprint2013arXiv

A New Multiferroic State with Large Electric Polarization in Tensile Strained TbMnO3

By performing first-principles calculations, we systematically explore the effect of epitaxial strain on the structure and properties of multiferroic TbMnO3. We show that, although the unstrained bulk TbMnO3 displays a non-collinear antiferromagnetic spin order, TbMnO3 can be ferromagnetic under compressive strain, in agreement with the experimental results on TbMnO3 grown on SrTiO3. By increasing the tensile strain up to 5%, we predict that TbMnO3 transforms into a new multiferroic state with a large ferroelectric polarization,two orders of magnitude larger than that in the unstrained bulk, and with a relatively high Neel temperature E-type antiferromagnetic order. We also find that the ferroelectric domain and antiferromagnetic domain are interlocked with each other, thus an external electric field can switch the ferroelectric domain and the antiferromagnetic domain simultaneously. Our work demonstrates that strain engineering can be used to improve the multiferroic properties of TbMnO3.

preprint2013arXiv

Adaptive Finite Element Approximations for Kohn-Sham Models

The Kohn-Sham equation is a powerful, widely used approach for computation of ground state electronic energies and densities in chemistry, materials science, biology, and nanosciences. In this paper, we study the adaptive finite element approximations for the Kohn-Sham model. Based on the residual type a posteriori error estimators proposed in this paper, we introduce an adaptive finite element algorithm with a quite general marking strategy and prove the convergence of the adaptive finite element approximations. Using D{\" o}rfler's marking strategy, we then get the convergence rate and quasi-optimal complexity. We also carry out several typical numerical experiments that not only support our theory,but also show the robustness and efficiency of the adaptive finite element computations in electronic structure calculations.

preprint2013arXiv

Prediction of (TiO2)x(Cu2O)y Alloys for Photoelectrochemical Water Splitting

The formation of (TiO2)x(Cu2O)y solid-solutions are investigated using a global optimization evolutionary algorithm. First-principles calculations based on density functional theory are then used to gain insight into the electronic properties of these alloys. We find that: (i) Ti and Cu in (TiO2)x(Cu2O)y alloys have similar local environments as in bulk TiO2 and Cu2O except for (TiO2)(Cu2O) which has some trigonal-planar Cu ions. (ii) The predicted optical band gaps are around 2.1 eV (590 nm), thus having much better performance for the absorption of visible light compared with both binary oxides. (iii) (TiO2)2(Cu2O) has the lowest formation energy amongst all studied alloys and the positions of its band edges are found to be suitable for solar-driven water splitting applications.

preprint2013arXiv

Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film

By combining genetic algorithm optimizations, first-principles calculations and the double-exchange model studies, we have unveiled that the exotic insulating ferromagnetism in LaMnO3 thin film originates from the previously unreported G-type d_{3z^2-r^2}/d_{x^2-y^2} orbital ordering. An insulating gap opens as a result of both the orbital ordering and the strong electron-phonon coupling. Therefore, there exist two strain induced phase transitions in the LaMnO3 thin film, from the insulating A-type antiferromagnetic phase to the insulating ferromagnetic phase and then to the metallic ferromagnetic phase. These phase transitions may be exploited in tunneling magnetoresistance and tunneling electroresistance related devices.

preprint2013arXiv

What Is Armchair-Zigzag Grain Boundary Structure in Graphene?

We have developed a new global optimization method for the determination of interface structure based on the differential evolution algorithm. Here, we applied this method to search for the ground state atomic structures of the grain boundary between the armchair and zigzag oriented graphene. We find two new grain boundary structures with considerably lower formation energy of about 1 eV/nm than that of the previously widely used structural models. These newly predicted structures show better mechanical property under external uniaxial strain, and distinguishable scanning tunneling microscope features, compared with the previous structural models. Our results provide important new information for the determination of grain boundary structures and henceforth the electronic properties of defected graphene.

preprint2012arXiv

Ordered Semiconducting Nitrogen-Graphene Alloys

The interaction between substitutional nitrogen atoms in graphene is studied by performing first principles calculations. The nearest neighbor interaction between nitrogen dopants is highly repulsive because of the strong electrostatic repulsion between nitrogen atoms, which prevents the full phase separation in nitrogen doped graphene. Interestingly, there are two relatively stable nitrogen-nitrogen pairs due to the anisotropy charge redistribution induced by nitrogen doping. We reveal two stable semiconducting ordered N doped graphene structures C3N and C12N through the cluster expansion technique and particle swarm optimization method. In particular, C12N has a direct band gap of 0.98 eV. The heterojunctions between C12N and graphene nanoribbons might be promising organic solar cells.

preprint2012arXiv

Si3AlP: A new promising material for solar cell absorber

First-principles calculations are performed to study the structural and optoelectronic properties of the newly synthesized nonisovalent and lattice-matched (Si2)0.6(AlP)0.4 alloy [T. Watkins et al., J. Am. Chem. Soc. 2011, 133, 16212.] We find that the ordered CC-Si3AlP with a basic unit of one P atom surrounded by three Si atoms and one Al atom is the most stable one within the experimentally observed unit cell.1 Si3AlP has a larger fundamental band gap and a smaller direct band gap than Si, thus it has much higher absorption in the visible light region. The calculated properties of Si3AlP suggest that it is a promising candidate for improving the performance of the existing Si-based solar cells. The understanding on the stability and band structure engineering obtained in this study is general and can be applied for future study of other nonisovalent and lattice-matched semiconductor alloys.

preprint2011arXiv

Numerical Analysis of Finite Dimensional Approximations of Kohn-Sham Models

In this paper, we study finite dimensional approximations of Kohn-Sham models, which are widely used in electronic structure calculations. We prove the convergence of the finite dimensional approximations and derive the a priori error estimates for ground state energies and solutions. We also provide numerical simulations for several molecular systems that support our theory.

preprint2011arXiv

Predicting Two-Dimensional Boron-Carbon Compounds by the Global Optimization Method

We adopt a global optimization method to predict two-dimensional (2D) nanostructures through the particle-swarm optimization (PSO) algorithm. By performing PSO simulations, we predict new stable structures of 2D boron-carbon (B-C) compounds for a wide range of boron concentrations. Our calculations show that: (1) All 2D B-C compounds are metallic except for BC3 which is a magic case where the isolation of carbon six-membered ring by boron atoms results in a semiconducting behavior. (2) For C-rich B-C compounds, the most stable 2D structures can be viewed as boron doped graphene structures, where boron atoms typically form 1D zigzag chains except for BC3 in which boron atoms are uniformly distributed. (3) The most stable 2D structure of BC has alternative carbon and boron ribbons with strong in-between B-C bonds, which possesses a high thermal stability above 2000K. (4) For B-rich 2D B-C compounds, there is a novel planar-tetracoordinate carbon motif with an approximate C2v symmetry.