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Ji-Hui Yang

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Published work

11 published item(s)

preprint2023arXiv

Efficient determination of the Hamiltonian and electronic properties using graph neural network with complete local coordinates

Despite the successes of machine learning methods in physical sciences, prediction of the Hamiltonian, and thus electronic properties, is still unsatisfactory. Here, based on graph neural network architecture, we present an extendable neural network model to determine the Hamiltonian from ab initio data, with only local atomic structures as inputs. Rotational equivariance of the Hamiltonian is achieved by our complete local coordinates. The local coordinates information, encoded using the convolutional neural network and designed to preserve Hermitian symmetry, is used to map hopping parameters onto local structures. We demonstrate the performance of our model using graphene and SiGe random alloys as examples. We show that our neural network model, although trained using small-size systems, can predict the Hamiltonian, as well as electronic properties such as band structures and densities of states (DOS) for large-size systems within the ab initio accuracy, justifying its extensibility. In combination with the high efficiency of our model, which takes only seconds to get the Hamiltonian of a 1728-atom system, present work provides a general framework to predict electronic properties efficiently and accurately, which provides new insights into computational physics and will accelerate the research for large-scale materials.

preprint2022arXiv

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS2. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by less intervalley scattering channels and weaker corresponding electron-phonon couplings compared to the bulk case. We show that, it is the matching between electronic band structure and phonon spectrum rather than their densities of electronic and phonon states that determines scattering channels. We propose, for the first time, the phonon-energy-resolved matching function to identify the intra- and inter-valley scattering channels. Furthermore, we show that multiple valleys do not necessarily lead to strong intervalley scattering if: (1) the scattering channels, which can be explicitly captured by the distribution of the matching function, are few due to the small matching between the corresponding electron and phonon bands; and/or (2) the multiple valleys are far apart in the reciprocal space and composed of out-of-plane orbitals so that the corresponding electron-phonon coupling strengths are weak. Consequently, the searching scope of high-mobility 2D materials can be reasonably enlarged using the matching function as useful guidance with the help of band edge orbital analysis.

preprint2022arXiv

Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4

Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phosphorus is a prominent example. However, it suffers from poor ambient stability. Here, we report the strain-tunable anisotropic infrared response of a layered material Nb2SiTe4, whose lattice structure is similar to the 2H-phase transition metal dichalcogenides (TMDCs) with three different kinds of building units. Strikingly, some of the strain-tunable optical transitions are crystallographic axis-dependent, even showing opposite shift when uniaxial strain is applied along two in-plane principal axes. Moreover, G0W0-BSE calculations show good agreement with the anisotropic extinction spectra. The optical selection rules are obtained via group theory analysis, and the strain induced unusual shift trends are well explained by the orbital coupling analysis. Our comprehensive study suggests that Nb2SiTe4 is a good candidate for tunable polarization-sensitive optoelectronic devices.

preprint2022arXiv

Exceptionally high phonon-limited carrier mobility in BX (X = P, As, Sb) monolayers

Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D devices. Here in this work, using first-principles calculations and considering all the electron-phonon couplings, we show that monolayer BX (X = P, As, Sb) with honeycomb lattices have intrinsic phonon-limited carrier mobility reaching record-high values of 1200-14000 $cm^2V^{-1}s^{-1}$ at room temperature. Despite being polar and the band edges located at the K point with multiple valleys, these three systems unusually have small carrier scattering rates. Detailed analysis shows that, both the intravalley scattering and the intervalley scattering between two equivalent K points are weak, which can be understood from the large mismatch between the electron bands and phonon spectrum and suppressed electron-phonon coupling strength. Furthermore, we reveal the general trend of mobility increase from BP to BAs and to BSb and conclude that: smaller effective masses, larger sound velocities, higher optical phonon energies, heavy atomic masses, and out-of-plane orbitals tend to result in small match between the electron and phonon bands, small electron-phonon coupling strengths, and thus high mobility. Our work demonstrates that 2D semiconductors can achieve comparable carrier mobility to 3D GaAs, thus opening doors to 2D high-performance electronic devices.

preprint2022arXiv

Origin of performance degradation in high-delithiation Li$_x$CoO$_2$: insights from direct atomic simulations using global neural network potentials

Li$_x$CoO$_2$ based batteries have serious capacity degradation and safety issues when cycling at high-delithiation states but full and consistent mechanisms are still poorly understood. Herein, a global neural network potential (GNNP) is developed to provide direct theoretical understandings by performing long-time and large-size atomic simulations. We propose a self-consistent picture as follows: (i) CoO$_2$ layers are easier to glide with longer distances at more highly delithiated states, resulting in structural transitions and structural inhomogeneity; (ii) at regions between different phases with different Li distributions due to gliding, local strains are induced and accumulate during cycling processes; (3) accumulated strains cause the rupture of Li diffusion channels and result in formation of oxygen dimers during cycling especially when Li has inhomogeneous distributions, leading to capacity degradations and safety issues. We find that large tensile strains combined with inhomogeneous distributions of Li ions play critical roles in the formation processes of blocked Li diffusion channels and the oxygen dimers at high-delithiation states, which could be the fundamental origins of capacity degradations and safety issues. Correspondingly, suppressing accumulations of strains by controlling charge and discharge conditions as well as suppressing the gliding will be helpful for improving the performance of lithium-ion batteries (LIBs).

preprint2020arXiv

Accurately Determining Defect Ionization Energy in Low-Dimensional Semiconductors: Charge Corrected Jellium Model

Determination of defect ionization energy in low-dimensional semiconductors has been a long-standing unsolved problem in first-principles defect calculations because the commonly used methods based on jellium model introduce an unphysical charge density uniformly distributed in the material and vacuum regions, causing the well-known divergence issue of charged defect formation energies. Here in this work, by considering the physical process of defect ionization, we propose a charge correction method based on jellium model to replace the unphysical jellium background charge density with the band edge charge density to deal with charged defects. We demonstrate that, our method is physically meaningful, quantitatively accurate and technically simple to determine the defect ionization energies, thus solving the long-standing problem in defect calculations. Our proposed method can be applied to any dimensional semiconductors.

preprint2013arXiv

First-principles Study On The Electronic And Optical Properties Of Cubic ABX3 Halide Perovskites

The electronic properties of ABX3 (A = Cs, CH3NH3, NH2CHNH2; B = Sn, Pb; X = Cl, Br, I) type compounds in the cubic phase are systematically studied using the first-principles calculations. We find that these compounds have direct band gaps at R point where the valance band maximum is an anti-bonding state of B s-X p coupling, while the conduction band minimum is a non-bonding state with B p characters. The chemical trend of their properties as A or B or X varies is fully investigated, which is of great importance to understand and optimize this kind of solar cell materials. We find that: (i) as the size of A increases, the band gap of ABX3 will increase; (ii) as B varies from Sn to Pb, the band gap of ABX3 will increase; and (iii) as X ranges from Cl to Br to I, the band gap will decrease. We explained these trends by analyzing their band structures. Furthermore, optical properties of the ABX3 compounds are investigated. Our calculations show that taking into account the spin-orbit coupling effect is crucial for predicting the accurate band gap of these halide perovskites. We predict that CH3NH3SnBr3 is a promising material for solar cells absorber with a perfect band gap and good optical absorption.

preprint2013arXiv

Prediction of (TiO2)x(Cu2O)y Alloys for Photoelectrochemical Water Splitting

The formation of (TiO2)x(Cu2O)y solid-solutions are investigated using a global optimization evolutionary algorithm. First-principles calculations based on density functional theory are then used to gain insight into the electronic properties of these alloys. We find that: (i) Ti and Cu in (TiO2)x(Cu2O)y alloys have similar local environments as in bulk TiO2 and Cu2O except for (TiO2)(Cu2O) which has some trigonal-planar Cu ions. (ii) The predicted optical band gaps are around 2.1 eV (590 nm), thus having much better performance for the absorption of visible light compared with both binary oxides. (iii) (TiO2)2(Cu2O) has the lowest formation energy amongst all studied alloys and the positions of its band edges are found to be suitable for solar-driven water splitting applications.

preprint2013arXiv

What Is Armchair-Zigzag Grain Boundary Structure in Graphene?

We have developed a new global optimization method for the determination of interface structure based on the differential evolution algorithm. Here, we applied this method to search for the ground state atomic structures of the grain boundary between the armchair and zigzag oriented graphene. We find two new grain boundary structures with considerably lower formation energy of about 1 eV/nm than that of the previously widely used structural models. These newly predicted structures show better mechanical property under external uniaxial strain, and distinguishable scanning tunneling microscope features, compared with the previous structural models. Our results provide important new information for the determination of grain boundary structures and henceforth the electronic properties of defected graphene.

preprint2012arXiv

Origin of the Superior Conductivity of Perovskite Ba(Sr)SnO3

ASnO3 (A=Ba, Sr) are unique perovskite oxides in that they have superior electron conductivity despite their wide optical band gaps. Using first-principles band structure calculations, we show that the small electron effective masses, thus, good electron conductivity of ASnO3 can be attributed to the large size of Sn in this system that gives the conduction band edge with antibonding Sn and O s characters. Moreover, we show that ASnO3 can be easily doped by La with shallow LaA(+/0) donor level. Our results, therefore, explained why the perovskite BaSnO3, SrSnO3, and their alloys are promising candidates for transparent conducting oxides.

preprint2012arXiv

Si3AlP: A new promising material for solar cell absorber

First-principles calculations are performed to study the structural and optoelectronic properties of the newly synthesized nonisovalent and lattice-matched (Si2)0.6(AlP)0.4 alloy [T. Watkins et al., J. Am. Chem. Soc. 2011, 133, 16212.] We find that the ordered CC-Si3AlP with a basic unit of one P atom surrounded by three Si atoms and one Al atom is the most stable one within the experimentally observed unit cell.1 Si3AlP has a larger fundamental band gap and a smaller direct band gap than Si, thus it has much higher absorption in the visible light region. The calculated properties of Si3AlP suggest that it is a promising candidate for improving the performance of the existing Si-based solar cells. The understanding on the stability and band structure engineering obtained in this study is general and can be applied for future study of other nonisovalent and lattice-matched semiconductor alloys.