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Xin-Gao Gong

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Published work

17 published item(s)

preprint2023arXiv

Efficient determination of the Hamiltonian and electronic properties using graph neural network with complete local coordinates

Despite the successes of machine learning methods in physical sciences, prediction of the Hamiltonian, and thus electronic properties, is still unsatisfactory. Here, based on graph neural network architecture, we present an extendable neural network model to determine the Hamiltonian from ab initio data, with only local atomic structures as inputs. Rotational equivariance of the Hamiltonian is achieved by our complete local coordinates. The local coordinates information, encoded using the convolutional neural network and designed to preserve Hermitian symmetry, is used to map hopping parameters onto local structures. We demonstrate the performance of our model using graphene and SiGe random alloys as examples. We show that our neural network model, although trained using small-size systems, can predict the Hamiltonian, as well as electronic properties such as band structures and densities of states (DOS) for large-size systems within the ab initio accuracy, justifying its extensibility. In combination with the high efficiency of our model, which takes only seconds to get the Hamiltonian of a 1728-atom system, present work provides a general framework to predict electronic properties efficiently and accurately, which provides new insights into computational physics and will accelerate the research for large-scale materials.

preprint2022arXiv

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS2. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by less intervalley scattering channels and weaker corresponding electron-phonon couplings compared to the bulk case. We show that, it is the matching between electronic band structure and phonon spectrum rather than their densities of electronic and phonon states that determines scattering channels. We propose, for the first time, the phonon-energy-resolved matching function to identify the intra- and inter-valley scattering channels. Furthermore, we show that multiple valleys do not necessarily lead to strong intervalley scattering if: (1) the scattering channels, which can be explicitly captured by the distribution of the matching function, are few due to the small matching between the corresponding electron and phonon bands; and/or (2) the multiple valleys are far apart in the reciprocal space and composed of out-of-plane orbitals so that the corresponding electron-phonon coupling strengths are weak. Consequently, the searching scope of high-mobility 2D materials can be reasonably enlarged using the matching function as useful guidance with the help of band edge orbital analysis.

preprint2022arXiv

Exceptionally high phonon-limited carrier mobility in BX (X = P, As, Sb) monolayers

Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D devices. Here in this work, using first-principles calculations and considering all the electron-phonon couplings, we show that monolayer BX (X = P, As, Sb) with honeycomb lattices have intrinsic phonon-limited carrier mobility reaching record-high values of 1200-14000 $cm^2V^{-1}s^{-1}$ at room temperature. Despite being polar and the band edges located at the K point with multiple valleys, these three systems unusually have small carrier scattering rates. Detailed analysis shows that, both the intravalley scattering and the intervalley scattering between two equivalent K points are weak, which can be understood from the large mismatch between the electron bands and phonon spectrum and suppressed electron-phonon coupling strength. Furthermore, we reveal the general trend of mobility increase from BP to BAs and to BSb and conclude that: smaller effective masses, larger sound velocities, higher optical phonon energies, heavy atomic masses, and out-of-plane orbitals tend to result in small match between the electron and phonon bands, small electron-phonon coupling strengths, and thus high mobility. Our work demonstrates that 2D semiconductors can achieve comparable carrier mobility to 3D GaAs, thus opening doors to 2D high-performance electronic devices.

preprint2022arXiv

Origin of performance degradation in high-delithiation Li$_x$CoO$_2$: insights from direct atomic simulations using global neural network potentials

Li$_x$CoO$_2$ based batteries have serious capacity degradation and safety issues when cycling at high-delithiation states but full and consistent mechanisms are still poorly understood. Herein, a global neural network potential (GNNP) is developed to provide direct theoretical understandings by performing long-time and large-size atomic simulations. We propose a self-consistent picture as follows: (i) CoO$_2$ layers are easier to glide with longer distances at more highly delithiated states, resulting in structural transitions and structural inhomogeneity; (ii) at regions between different phases with different Li distributions due to gliding, local strains are induced and accumulate during cycling processes; (3) accumulated strains cause the rupture of Li diffusion channels and result in formation of oxygen dimers during cycling especially when Li has inhomogeneous distributions, leading to capacity degradations and safety issues. We find that large tensile strains combined with inhomogeneous distributions of Li ions play critical roles in the formation processes of blocked Li diffusion channels and the oxygen dimers at high-delithiation states, which could be the fundamental origins of capacity degradations and safety issues. Correspondingly, suppressing accumulations of strains by controlling charge and discharge conditions as well as suppressing the gliding will be helpful for improving the performance of lithium-ion batteries (LIBs).

preprint2020arXiv

Accurately Determining Defect Ionization Energy in Low-Dimensional Semiconductors: Charge Corrected Jellium Model

Determination of defect ionization energy in low-dimensional semiconductors has been a long-standing unsolved problem in first-principles defect calculations because the commonly used methods based on jellium model introduce an unphysical charge density uniformly distributed in the material and vacuum regions, causing the well-known divergence issue of charged defect formation energies. Here in this work, by considering the physical process of defect ionization, we propose a charge correction method based on jellium model to replace the unphysical jellium background charge density with the band edge charge density to deal with charged defects. We demonstrate that, our method is physically meaningful, quantitatively accurate and technically simple to determine the defect ionization energies, thus solving the long-standing problem in defect calculations. Our proposed method can be applied to any dimensional semiconductors.

preprint2016arXiv

Novel Self-passivation Rule and Structure of CdTe sigma3 (112) Grain Boundary

The theoretical study of grain boundaries (GBs) in polycrystalline semiconductors is currently stalemated by their complicated nature, which is difficult to extract from any direct experimental characterization. Usually, coincidence-site-lattice (CSL) models are constructed simply by aligning two symmetric planes, ignoring various possible reconstructions. Here, we propose a general self-passivation rule to determine the low-energy GB reconstruction, and find new configurations for the CdTe sigma3 (112) GBs. First-principles calculations show that it has lower formation energies than the prototype GBs adopted widely in previous studies. Surprisingly, the reconstructed GBs show self-passivated electronic properties without deep-level states in the band gap. Based on the reconstructed configurations, we revisited the influence of CdCl2 post-treatment on the CdTe GBs, and found that the addition of both Cd and Cl atoms in the GB improves the photovoltaic properties by promoting self-passivation and inducing n-type levels, respectively. The present study provides a new route for further studies of GBs in covalent polycrystalline semiconductors and also highlights that previous studies on the GBs of multinary semiconductors which are based on the unreconstructed prototype GB models, should be revisited.

preprint2015arXiv

Giant biquadratic interaction induced magnetic anisotropy in the iron-based superconductor AxFe2-ySe2

The emergence of the electron-pocket only iron-based superconductor AxFe2-ySe2 (A = alkali metal) challenges the Fermi-surface nesting picture established in iron-pnictides. It was widely believed that magnetism is correlated with the superconductivity in AxFe2-ySe2. Unfortunately, the highly anisotropic exchange parameters and the disagreement between theoretical calculations and experimental results triggered a fierce debate on the nature of magnetism in AxFe2-ySe2. Here we find that the strong magnetic anisotropy is from the anisotropic biquadratic interaction. In order to accurately obtain the magnetic interaction parameters, we propose a universal method, which does not need including other high energy configurations as did in conventional energy mapping method. We show that our model successfully captures the magnetic interactions in AxFe2-ySe2 and correctly predicts the spin wave spectrum, in quantitative agreement with the experimental observation. These results suggest that the local moment picture, including the biquadratic term, can describe accurately the magnetic properties and spin excitations in AxFe2-ySe2, which sheds new light on the future study of the high-Tc iron-based superconductors.

preprint2015arXiv

Oxygen Vacancy Induced Flat Phonon Mode at FeSe /SrTiO3 interface

A high-frequency optical phonon mode of SrTiO3 (STO) was found to assist the high-temperature superconductivity observed recently at the interface between monolayer FeSe and STO substrate. However, the origin of this mode is not clear. Through first-principles calculations, we find that there is a novel polar phonon mode on the surface layers of the STO substrate, which does not exist in the STO crystals. The oxygen vacancies near the FeSe/STO interface drives the dispersion of this phonon mode to be flat and lowers its energy, whereas the charge transfer between STO substrate and FeSe monolayer further reduces its energy to 81 meV. This energy is in good agreement with the experimental value fitted by Lee et al. for the phonon mode responsible for the observed replica band separations and the increased superconducting gap. The oxygen-vacancy-induced flat and polar phonon mode provides clues for understanding the origin of high Tc superconductivity at the FeSe/STO interface.

preprint2015arXiv

Structural Evolution and Optoelectronic Applications of Multilayer Silicene

Despite the recent progress on two-dimensional multilayer materials (2DMM) with weak interlayer interactions, the investigation on 2DMM with strong interlayer interactions is far from its sufficiency. Here we report on first-principles calculations that clarify the structural evolution and optoelectronic properties of such a 2DMM, multilayer silicene. With our newly developed global optimization algorithm, we discover the existence of rich dynamically stable multilayer silicene phases, the stability of which is closely related to the extent of sp3 hybridization that can be evaluated by the average bonds and effective bond angles. The stable Si(111) surface structures are obtained when the silicene thickness gets up to four, showing the critical thickness for the structural evolution. We also find that the multilayer silicene with pi-bonded surfaces present outstanding optoelectronic properties for the solar cells and optical fiber communications due to the incorporation of sp2-type bonds in the sp3-type bonds dominated system. This study is helpful to complete the picture of structure and related property evolution of 2DMM with strong interlayer interactions.

preprint2015arXiv

Unveiling the Origin of the Basal-plane Antiferromagnetism in the Jeff=1/2 Mott Insulator Ba2IrO4: A Density Functional and Model Hamiltonian Study

Based on the density functional theory and our new model Hamiltonian, we have studied the basal-plane antiferromagnetism in the novel Jeff=1/2 Mott insulator Ba2IrO4. By comparing the magnetic properties of the bulk Ba2IrO4 with those of the single-layer Ba2IrO4, we demonstrate unambiguously that the basal-plane antiferromagnetism is caused by the intralyer magnetic interactions rather than by the previously proposed interlayer ones. In order to reveal the origin of the basal-plane antiferromagnetism, we propose a new model Hamiltonian by adding the single ion anisotropy and pseudo-quadrupole interactions into the general bilinear pseudo-spin Hamiltonian. The obtained magnetic interaction parameters indicate that the single ion anisotropy and pseudo-quadrupole interactions are unexpectedly strong. Systematical Monte Carlo simulations demonstrate that the basal-plane antiferromagnetism is caused by the isotropic Heisenberg, bond-dependent Kitaev and pseudo-quadrupole interactions. Our results show for the first time that the single ion anisotropy and pseudo-quadrupole interaction can play significant roles in establishing the exotic magnetism in the Jeff=1/2 Mott insulator.

preprint2014arXiv

Antiferromagnetic ground state with pair-checkboard order in FeSe

Monolayer FeSe thin film grown on SrTiO_{3}(001) (STO) shows the sign of T_{c}> 77 K, which is higher than the T_{c}-record of 56 K for the bulk FeAs-based superconductors. However, little is known about the magnetic ground state of FeSe, which should be closely related to its unusual superconductivity. Previous studies presume the collinear stripe antiferromagnetic (AFM) state as the ground state of FeSe, same to that in FeAs superconductors. Here we find a novel magnetic order named "pair-checkboard AFM" as the magnetic ground state of tetragonal FeSe. The novel pair-checkboard order results from the interplay between the nearest, the next-nearest and the unnegligible next-next-nearest neighbor magnetic exchange couplings of Fe atoms. The monolayer FeSe in pair-checkbord order shows an unexpected insulating behavior with a Dirac-cone-like band structure related to the specific orbital order of d_{xz} and d_{yz} characters of Fe atoms, which could explain recently observed insulator-superconductor transition. The present results cast new insights on the magnetic ordering in FeSe monolayer and its derived superconductors.

preprint2013arXiv

The interfacial effects on the spin density wave in FeSe/SrTiO3 thin film

Recently, the signs of both superconducting transition temperature (Tc) beyond 60 K and spin density wave (SDW) have been observed in FeSe thin film on SrTiO3 (STO) substrate, which suggests a strong interplay between superconductivity and magnetism. With the first-principles calculations, we find that the substrate-induced tensile strain tends to stabilize the SDW state in FeSe thin film by enhancing of the next-nearest-neighbor superexchange antiferromagnetic interaction bridged through Se atoms. On the other hand, we find that when there are oxygen vacancies in the substrate, the significant charge transfer from the substrate to the first FeSe layer would suppress the magnetic order there, and thus the high-temperature superconductivity could occur. In addition, the stability of the SDW is lowered when FeSe is on a defect-free STO substrate due to the redistribution of charges among the Fe 3d-orbitals. Our results provide a comprehensive microscopic explanation for the recent experimental findings, and build a foundation for the further exploration of the superconductivity and magnetism in this novel superconducting interface.

preprint2012arXiv

Thermal conductivity of epitaxial graphene nanoribbons on SiC: effect of substrate

We study the effect of SiC substrate on thermal conductivity of epitaxial graphene nanoribbons (GNRs) using the nonequilibrium molecular dynamics method. We show that the substrate has strong interaction with single-layer GNRs during the thermal transport, which largely reduces the thermal conductivity. The thermal conductivity characteristics of suspended GNRs are well preserved in the second GNR layers of bilayer GNR, which has a weak van der Waals interaction with the underlying structures. The out-of-plane phonon mode is found to play a critical role on the thermal conductivity variation of the second GNR layer induced by the underlying structures.

preprint2012arXiv

Unexpected large thermal rectification in asymmetric grain boundary of graphene

We have investigated the lattice thermal transport across the asymmetric tilt grain boundary between armchair and zigzag graphene by nonequilibrium molecular dynamics (NEMD). We have observed significant temperature drop and ultra-low temperature-dependent thermal boundary resistance. More importantly, we find an unexpected thermal rectification phenomenon. The thermal conductivity and Kapitza conductance is direction-dependent. The effect of thermal rectification could be amplified by increasing the difference of temperature imposed on two sides. Our results propose a promising kind of thermal rectifier and phonon diodes based on polycrystalline graphene without delicate manipulation of the atomic structure.

preprint2011arXiv

Finite temperature properties of clusters by replica exchange metadynamics: the water nonamer

We introduce an approach for the accurate calculation of thermal properties of classical nanoclusters. Based on a recently developed enhanced sampling technique, replica exchange metadynamics, the method yields the true free energy of each relevant cluster structure, directly sampling its basin and measuring its occupancy in full equilibrium. All entropy sources, whether vibrational, rotational anharmonic and especially configurational -- the latter often forgotten in many cluster studies -- are automatically included. For the present demonstration we choose the water nonamer (H2O)9, an extremely simple cluster which nonetheless displays a sufficient complexity and interesting physics in its relevant structure spectrum. Within a standard TIP4P potential description of water, we find that the nonamer second relevant structure possesses a higher configurational entropy than the first, so that the two free energies surprisingly cross for increasing temperature.

preprint2011arXiv

Layer and size dependence of thermal conductivity in multilayer graphene nanoribbons

Using non-equilibrium molecular dynamics method(NEMD), we have found that the thermal conductivity of multilayer graphene nanoribbons monotonously decreases with the increase of the number of layers, such behavior can be attributed to the phonon resonance effect of out-of-plane phonon modes. The reduction of thermal conductivity is found to be proportional to the layer size, which is caused by the increase of phonon resonance. Our results are in agreement with recent experiment on dimensional evolution of thermal conductivity in few layer graphene.

preprint2010arXiv

Manipulating thermal conductivity through substrate coupling

We report a new approach to the thermal conductivity manipulation -- substrate coupling. Generally, the phonon scattering with substrates can decrease the thermal conductivity, as observed in recent experiments. However, we find that at certain regions, the coupling to substrates can increase the thermal conductivity due to a reduction of anharmonic phonon scattering induced by shift of the phonon band to the low wave vector. In this way, the thermal conductivity can be efficiently manipulated via coupling to different substrates, without changing or destroying the material structures. This idea is demonstrated by calculating the thermal conductivity of modified double-walled carbon nanotubes and also by the ice nanotubes coupled within carbon nanotubes.