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Researcher profile

Xin-Gao Gong

Xin-Gao Gong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phcond-mat.dis-nn

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Published work

5 published item(s)

preprint2023arXiv

Efficient determination of the Hamiltonian and electronic properties using graph neural network with complete local coordinates

Despite the successes of machine learning methods in physical sciences, prediction of the Hamiltonian, and thus electronic properties, is still unsatisfactory. Here, based on graph neural network architecture, we present an extendable neural network model to determine the Hamiltonian from ab initio data, with only local atomic structures as inputs. Rotational equivariance of the Hamiltonian is achieved by our complete local coordinates. The local coordinates information, encoded using the convolutional neural network and designed to preserve Hermitian symmetry, is used to map hopping parameters onto local structures. We demonstrate the performance of our model using graphene and SiGe random alloys as examples. We show that our neural network model, although trained using small-size systems, can predict the Hamiltonian, as well as electronic properties such as band structures and densities of states (DOS) for large-size systems within the ab initio accuracy, justifying its extensibility. In combination with the high efficiency of our model, which takes only seconds to get the Hamiltonian of a 1728-atom system, present work provides a general framework to predict electronic properties efficiently and accurately, which provides new insights into computational physics and will accelerate the research for large-scale materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS2. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by less intervalley scattering channels and weaker corresponding electron-phonon couplings compared to the bulk case. We show that, it is the matching between electronic band structure and phonon spectrum rather than their densities of electronic and phonon states that determines scattering channels. We propose, for the first time, the phonon-energy-resolved matching function to identify the intra- and inter-valley scattering channels. Furthermore, we show that multiple valleys do not necessarily lead to strong intervalley scattering if: (1) the scattering channels, which can be explicitly captured by the distribution of the matching function, are few due to the small matching between the corresponding electron and phonon bands; and/or (2) the multiple valleys are far apart in the reciprocal space and composed of out-of-plane orbitals so that the corresponding electron-phonon coupling strengths are weak. Consequently, the searching scope of high-mobility 2D materials can be reasonably enlarged using the matching function as useful guidance with the help of band edge orbital analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Exceptionally high phonon-limited carrier mobility in BX (X = P, As, Sb) monolayers

Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D devices. Here in this work, using first-principles calculations and considering all the electron-phonon couplings, we show that monolayer BX (X = P, As, Sb) with honeycomb lattices have intrinsic phonon-limited carrier mobility reaching record-high values of 1200-14000 $cm^2V^{-1}s^{-1}$ at room temperature. Despite being polar and the band edges located at the K point with multiple valleys, these three systems unusually have small carrier scattering rates. Detailed analysis shows that, both the intravalley scattering and the intervalley scattering between two equivalent K points are weak, which can be understood from the large mismatch between the electron bands and phonon spectrum and suppressed electron-phonon coupling strength. Furthermore, we reveal the general trend of mobility increase from BP to BAs and to BSb and conclude that: smaller effective masses, larger sound velocities, higher optical phonon energies, heavy atomic masses, and out-of-plane orbitals tend to result in small match between the electron and phonon bands, small electron-phonon coupling strengths, and thus high mobility. Our work demonstrates that 2D semiconductors can achieve comparable carrier mobility to 3D GaAs, thus opening doors to 2D high-performance electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Origin of performance degradation in high-delithiation Li$_x$CoO$_2$: insights from direct atomic simulations using global neural network potentials

Li$_x$CoO$_2$ based batteries have serious capacity degradation and safety issues when cycling at high-delithiation states but full and consistent mechanisms are still poorly understood. Herein, a global neural network potential (GNNP) is developed to provide direct theoretical understandings by performing long-time and large-size atomic simulations. We propose a self-consistent picture as follows: (i) CoO$_2$ layers are easier to glide with longer distances at more highly delithiated states, resulting in structural transitions and structural inhomogeneity; (ii) at regions between different phases with different Li distributions due to gliding, local strains are induced and accumulate during cycling processes; (3) accumulated strains cause the rupture of Li diffusion channels and result in formation of oxygen dimers during cycling especially when Li has inhomogeneous distributions, leading to capacity degradations and safety issues. We find that large tensile strains combined with inhomogeneous distributions of Li ions play critical roles in the formation processes of blocked Li diffusion channels and the oxygen dimers at high-delithiation states, which could be the fundamental origins of capacity degradations and safety issues. Correspondingly, suppressing accumulations of strains by controlling charge and discharge conditions as well as suppressing the gliding will be helpful for improving the performance of lithium-ion batteries (LIBs).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Accurately Determining Defect Ionization Energy in Low-Dimensional Semiconductors: Charge Corrected Jellium Model

Determination of defect ionization energy in low-dimensional semiconductors has been a long-standing unsolved problem in first-principles defect calculations because the commonly used methods based on jellium model introduce an unphysical charge density uniformly distributed in the material and vacuum regions, causing the well-known divergence issue of charged defect formation energies. Here in this work, by considering the physical process of defect ionization, we propose a charge correction method based on jellium model to replace the unphysical jellium background charge density with the band edge charge density to deal with charged defects. We demonstrate that, our method is physically meaningful, quantitatively accurate and technically simple to determine the defect ionization energies, thus solving the long-standing problem in defect calculations. Our proposed method can be applied to any dimensional semiconductors.

0 citations0 reviewsNo code linkedOpen access