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Researcher profile

Yongsheng Wang

Yongsheng Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.ins-detcond-mat.mes-hallphysics.opticsphysics.plasm-ph

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Published work

5 published item(s)

preprint2016arXiv

Ion cyclotron resonance heating systems upgrade toward high power and CW operations in WEST

The design of the WEST (Tungsten-W Environment in Steady-state Tokamak) Ion cyclotron resonance heating antennas is based on a previously tested conjugate-T Resonant Double Loops prototype equipped with internal vacuum matching capacitors. The design and construction of three new WEST ICRH antennas are being carried out in close collaboration with ASIPP, within the framework of the Associated Laboratory in the fusion field between IRFM and ASIPP. The coupling performance to the plasma and the load-tolerance have been improved, while adding Continuous Wave operation capability by introducing water cooling in the entire antenna. On the generator side, the operation class of the high power tetrodes is changed from AB to B in order to allow high power operation (up to 3 MW per antenna) under higher VSWR (up to 2:1). Reliability of the generators is also improved by increasing the cavity breakdown voltage. The control and data acquisition system is also upgraded in order to resolve and react on fast events, such as ELMs. A new optical arc detection system comes in reinforcement of the V r /V f and SHAD systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A new method of energy calibration of position-sensitive silicon detector

An improved method of energy calibration of position-sensitive silicon detector is presented. Instead of the parabolic function used in traditional method, a new function describing the relation of position and energy is introduced and achieves better energy resolution. For the 8.088 MeV alpha decay of 213Rn calibrated by this new method, the energy resolution is determined to be about 87 keV (FWHM), which is better than the result of the traditional method, 104 keV (FWHM). In addition, different functions can be tried in the new method, which makes the calibration of various detectors with different performances possible.

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preprint2015arXiv

Exceptional and Anisotropic Transport Properties of Photocarriers in Black Phosphorus

We show that black phosphorus has room-temperature charge mobilities on the order of 10$^4$ cm$^2$V$^{-1}$s$^{-1}$, which are about one order of magnitude larger than silicon. We also demonstrate strong anisotropic transport in black phosphorus, where the mobilities along the armchair direction are about one order of magnitude larger than zigzag direction. A photocarrier lifetime as long as 100 ps is also determined. These results illustrate that black phosphorus is a promising candidate for future electronic and optoelectronic applications.

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preprint2013arXiv

Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy

We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection of a time-delayed and spatially scanned 660-nm pulse. We find an intervalley transfer time of about 0.35 ps, an energy relaxation time of hot carriers on the order of 50 ps, and a carrier lifetime of 180 ps. By monitoring the spatiotemporal dynamics of carriers, we obtained a diffusion coefficient of thermalized electrons of 4.2 cm2/s, corresponding to a mobility of 170 cm2/Vs. We also observed a time-varying diffusion coefficient of hot carriers.

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preprint2013arXiv

Exciton-exciton annihilation in MoSe2 monolayers

We investigate the excitonic dynamics in MoSe2 monolayer and bulk samples by femtosecond transient absorption microscopy. Excitons are resonantly injected by a 750-nm and 100-fs laser pulse, and are detected by a probe pulse tuned in the range of 790 - 820 nm. We observe a strong density-dependent initial decay of the exciton population in monolayers, which can be well described by the exciton-exciton annihilation. Such a feature is not observed in the bulk under comparable conditions. We also observe the saturated absorption induced by exciton phase-space filling in both monolayers and the bulk, which indicates their potential applications as saturable absorbers.

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