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Jiaqi He

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3works
3topics
4close collaborators

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3 publications

preprint2021arXiv

Regularized Recovery by Multi-order Partial Hypergraph Total Variation

Capturing complex high-order interactions among data is an important task in many scenarios. A common way to model high-order interactions is to use hypergraphs whose topology can be mathematically represented by tensors. Existing methods use a fixed-order tensor to describe the topology of the whole hypergraph, which ignores the divergence of different-order interactions. In this work, we take this divergence into consideration, and propose a multi-order hypergraph Laplacian and the corresponding total variation. Taking this total variation as a regularization term, we can utilize the topology information contained by it to smooth the hypergraph signal. This can help distinguish different-order interactions and represent high-order interactions accurately.

preprint2015arXiv

Exceptional and Anisotropic Transport Properties of Photocarriers in Black Phosphorus

We show that black phosphorus has room-temperature charge mobilities on the order of 104^4 cm2^2V−1^{-1}s−1^{-1}, which are about one order of magnitude larger than silicon. We also demonstrate strong anisotropic transport in black phosphorus, where the mobilities along the armchair direction are about one order of magnitude larger than zigzag direction. A photocarrier lifetime as long as 100 ps is also determined. These results illustrate that black phosphorus is a promising candidate for future electronic and optoelectronic applications.

preprint2013arXiv

Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy

We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection of a time-delayed and spatially scanned 660-nm pulse. We find an intervalley transfer time of about 0.35 ps, an energy relaxation time of hot carriers on the order of 50 ps, and a carrier lifetime of 180 ps. By monitoring the spatiotemporal dynamics of carriers, we obtained a diffusion coefficient of thermalized electrons of 4.2 cm2/s, corresponding to a mobility of 170 cm2/Vs. We also observed a time-varying diffusion coefficient of hot carriers.

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