Researcher profile

Yongji Gong

Yongji Gong contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Active control of surface plasmon resonance in MoS2-Ag hybrid nanostructures

Molybdenum disulfide (MoS2) monolayers have attracted much attention for their novel optical properties and efficient light-matter interactions. When excited by incident laser, the optical response of MoS2 monolayers was effectively modified by elementary photo-excited excitons owing to their large exciton binding energy, which can be facilitated for the optical-controllable exciton-plasmon interactions. Inspired by this concept, we experimentally investigated active light control of surface plasmon resonance (SPR) in MoS2-Ag hybrid nanostructures. The white light spectra of SPR were gradually red-shifted by increasing laser power, which was distinctly different from the one of bare Ag nanostructure. This spectroscopic tunability can be further controlled by near-field coupling strength and polarization state of light, and selectively applied to the control of plasmonic dark mode. An analytical Lorentz model for photo-excited excitons induced modulation of MoS2 dielectric function was developed to explain the insight physics of this SPR tunability. Our study opens new possibilities to the development of all-optical controlled nanophotonic devices based on 2D materials.

preprint2016arXiv

Valley Trion Dynamics in Monolayer MoSe$_2$

Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different pump fluences show that the trion decay dynamics become slower as the excitation density increases. The observed trion dynamics and the associated density dependence are a result of the trapping by two defect states as being the dominating decay mechanism. The simulation based on a set of rate equations reproduces the experimental data for different pump fluences. Our results reveal the important trion dynamics and identify the trapping by defect states as the primary trion decay mechanism in monolayer MoSe$_2$ under the excitation densities used in our experiment.

preprint2014arXiv

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting.