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Yogesh S. Chauhan

Yogesh S. Chauhan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci Cryptography and Security physics.app-ph

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preprint2022arXiv

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

preprint2020arXiv

Power Side-Channel Attacks in Negative Capacitance Transistor (NCFET)

Side-channel attacks have empowered bypassing of cryptographic components in circuits. Power side-channel (PSC) attacks have received particular traction, owing to their non-invasiveness and proven effectiveness. Aside from prior art focused on conventional technologies, this is the first work to investigate the emerging Negative Capacitance Transistor (NCFET) technology in the context of PSC attacks. We implement a CAD flow for PSC evaluation at design-time. It leverages industry-standard design tools, while also employing the widely-accepted correlation power analysis (CPA) attack. Using standard-cell libraries based on the 7nm FinFET technology for NCFET and its counterpart CMOS setup, our evaluation reveals that NCFET-based circuits are more resilient to the classical CPA attack, due to the considerable effect of negative capacitance on the switching power. We also demonstrate that the thicker the ferroelectric layer, the higher the resiliency of the NCFET-based circuit, which opens new doors for optimization and trade-offs.