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Yee Kan Koh

Yee Kan Koh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

6 published item(s)

preprint2022arXiv

Non-equilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that in addition to phonon transport, thermal resistance between non-equilibrium phonons in the 2D materials could play a critical role too when the 2D material devices are internally self-heated, either optically or electrically. We accurately measure R of oxide/MoS2/oxide and oxide/graphene/oxide interfaces for three oxides (SiO2, HfO2, Al2O3) by differential time-domain thermoreflectance (TDTR). Our measurements of R across these interfaces with external heating are 2-to-4 times lower than previously reported R of the similar interfaces measured by Raman thermometry with internal self-heating. Using a simple model, we show that the observed discrepancy can be explained by an additional internal thermal resistance (Rint) between non-equilibrium phonons present during Raman measurements. We subsequently estimate that for MoS2 and graphene, Rint is about 31 and 22 m2 K/GW, respectively. The values are comparable to the thermal resistance due to finite phonon transmission across interfaces of 2D materials and thus cannot be ignored in the design of 2D material devices. Moreover, the non-equilibrium phonons also lead to a different temperature dependence than that by phonon transport. As such, our work provides important insights into physical understanding of heat dissipation in 2D material devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of remote interfacial phonon (RIP) scattering in heat transport across graphene/SiO2 interfaces

Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique, called voltage-modulated thermoreflectance (VMTR), to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG=0.8 MW m-2 K-1 under electrostatic fields of <0.2 V nm-1 . We propose two possible explanations for the observed ΔG. First, since the applied electrostatic field induces charge carriers in graphene, our VMTR measurements could originate from heat transfer between the charge carriers in graphene and RIPs in SiO2. Second, the increase in heat conduction could be caused by better conformity of graphene interfaces un-der electrostatic pressure exerted by the induced charge carriers. Regardless of the origins of the observed ΔG, our VMTR measurements establish an upper limit for heat transfer from unbiased graphene to SiO2 substrates via RIP scattering; i.e., only <2 % of the interfacial heat transport is facilitated by RIP scattering even at a carrier concentration of 4x10^12 cm-2.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature dependence of anisotropic thermal conductivity tensor of bulk black phosphorus

To date, the intrinsic thermal conductivity tensor of bulk black phosphorus (BP), an important 2D material, is still unknown, since recent studies focus on BP flakes not on bulk BP. Here we report the anisotropic thermal conductivity tensor of bulk BP, for temperature range 80 - 300 K. Our measurements are similar to prior measurements on submicron BP flakes along zigzag and armchair axes, but are >25% higher in the through-plane axis, suggesting that phonon mean-free-paths are substantially longer in the through-plane direction. We find that despite the anisotropy in thermal conductivity, phonons are predominantly scattered by the same Umklapp processes in all directions. We also find that the phonon relaxation time is rather isotropic in the basal planes, but is highly anisotropic in the through-plane direction. Our work advances fundamental knowledge of anisotropic scattering of phonons in BP and is an important benchmark for future studies on thermal properties of BP nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Improved topological conformity enhances heat conduction across metal contacts on transferred graphene

Thermal conductance of metal contacts on transferred graphene (trG) could be significantly reduced from the intrinsic value of similar contacts on as-grown graphene (grG), due to additional resistance by increased roughness, residues, oxides and voids. In this paper, we compare the thermal conductance (G) of Al/trG/Cu interfaces with that of Al/grG/Cu interfaces to understand heat transfer across metal contacts on transferred graphene. Our samples are polycrystalline graphene grown on Cu foils by chemical vapor deposition (CVD) and CVD-grown graphene transferred to evaporated Cu thin films. We find that for the Al/grG/Cu interfaces of as-grown CVD graphene, G=31 MW m^{-2} K^{-1} at room temperature, two orders of magnitude lower than that of Al/Cu interfaces. For most as-transferred graphene on Cu films, G=20 MW m^{-2} K^{-1}, 35% lower than that of as-grown CVD graphene. We carefully rule out the contributions of residues, native oxides and interfaces roughness, and attribute the difference in the thermal conductance of as-grown and as-transferred CVD graphene to different degrees of conformity of graphene to the Cu substrates. We find that a contact area of 50% only reduces the thermal conductance by 35%, suggesting that a small amount of heat transfer occurs across voids at graphene interfaces. We successfully improve the conformity of the as-transferred graphene to the substrates by annealing the samples at 300°C, and thus enhance the thermal conductance of the transferred graphene to the intrinsic value. From the temperature dependence measurements of G of Al/trG/Cu and Al/grG/Cu interfaces, we also confirm that phonons are the dominant heat carries across the metal/graphene/metal interfaces despite a substantial carrier concentration of 3x10^{12} cm^{-2} induced in the graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Heat Conduction across Monolayer and Few-Layer Graphenes

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)

We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si), and is particularly useful in the range n>4 where few methods exist. We compare our results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Lastly, we apply our method to unambiguously identify n of FLG devices and find that the mobility (~2000 cm2 V-1 s-1) is independent of layer thickness for n>4.

0 citations0 reviewsNo code linkedOpen access