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Myung-Ho Bae

Myung-Ho Bae appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

19 published item(s)

preprint2019arXiv

Energy dissipation in van der Waals two-dimensional devices

Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in such materials. We review the microscopic mechanisms that govern Joule heating and energy dissipation processes in 2D materials such as graphene, black phosphorus and semiconducting transition metal dichalcogenides. We discuss the processes through which non-equilibrium charge carriers, created either transiently through photoexcitation or at steady state by a large electric field, undergo energy relaxation with the lattice and the substrate We also discuss how these energy dissipation processes are affected by the device configuration (heterostructure, substrate material including hexagonal boron nitride, etc) as the use of different substrates, encapsulation, disorder, etc can introduce or remove scattering processes that change the energy relaxation pathways. Finally, we discuss how the unique carrier scattering dynamics in graphene-based vdW heterostructures can be exploited for optoelectronic applications in light emission and photodetection.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of remote interfacial phonon (RIP) scattering in heat transport across graphene/SiO2 interfaces

Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique, called voltage-modulated thermoreflectance (VMTR), to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG=0.8 MW m-2 K-1 under electrostatic fields of <0.2 V nm-1 . We propose two possible explanations for the observed ΔG. First, since the applied electrostatic field induces charge carriers in graphene, our VMTR measurements could originate from heat transfer between the charge carriers in graphene and RIPs in SiO2. Second, the increase in heat conduction could be caused by better conformity of graphene interfaces un-der electrostatic pressure exerted by the induced charge carriers. Regardless of the origins of the observed ΔG, our VMTR measurements establish an upper limit for heat transfer from unbiased graphene to SiO2 substrates via RIP scattering; i.e., only <2 % of the interfacial heat transport is facilitated by RIP scattering even at a carrier concentration of 4x10^12 cm-2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum coherence and population transfer in a driven cascade three-level artificial atom

We present an experimental investigation on the spectral characteristics of an artificial atom "transmon qubit" constituting a three-level cascade system (Ξ-system) in the presence of a pair of external driving fields. We observe two different types of Autler-Townes (AT) splitting: type I, where the phenomenon of two-photon resonance tends to diminish as the coupling field strength increases, and type II, where this phenomenon mostly stays constant. We find that the types are determined by the cooperative effect of the decay rates and the field strengths. Theoretically analyzing the density-matrix elements in the weak-field limit where the AT effect is suppressed, we single out events of pure two-photon coherence occurring owing to constructive quantum interference.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Substrate-supported thermometry platform for nanomaterials like graphene, nanotubes, and nanowires

We demonstrate a substrate-supported thermometry platform to measure thermal conduction in nanomaterials like graphene, with no need to suspend them. We use three-dimensional simulations and careful uncertainty analysis to optimize the platform geometry and to obtain the sample thermal conductivity. The lowest thermal sheet conductance that can be sensed with <50% error is ~25 nW/K at room temperature, indicating applicability of this platform to graphene or polymer thin films, nanotube or nanowire arrays, even a single Si nanowire. The platform can also be extended to plastic substrates, and could find wide applicability in circumstances where fabrication challenges and low yield associated with suspended platforms must be avoided.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic to diffusive crossover of heat flow in graphene ribbons

Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, enabled by the relatively large phonon mfp (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons (GNRs) leads to a diffusive heat flow regime that is controlled by ribbon width and edge disorder. In the edge-controlled regime, the GNR thermal conductivity scales with width approximately as ~W^{1.8+/-0.3}, being about 100 W/m/K in 65-nm-wide GNRs, at room temperature. Manipulation of device dimensions on the scale of the phonon mfp can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to 15%. Heating effects are reduced if the supporting insulator is thinned, or in shorter channel devices by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of ~30-300 ns, dominated by the thickness of the supporting insulator and that of device capping layers (a behavior also expected in ultrathin body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm2/V/s, comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ~2 x 10^9 A/cm2, the highest reported for nanoscale CVD graphene interconnects. At temperatures below ~5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Measurement of Andreev Bound States in a Kondo-Correlated Quantum Dot

We report transport measurements of gate-tunable Andreev bound states in a carbon nanotube quantum dot coupled to two superconducting leads. In particular, we observe clear features of two types of Kondo ridges, which can be understood in terms of the interplay between the Kondo effect and superconductivity. In the first type (type I), the coupling is strong and the Kondo effect is dominant. Levels of the Andreev bound states display anti-crossing in the middle of the ridge. On the other hand, crossing of the two Andreev bound states is shown in the second type (type II) together with the 0-$π$ transition of the Josephson junction. Our scenario is well understood in terms of only a single dimensionless parameter, $k_BT_K^{min}/Δ$, where $T_K^{min}$ and $Δ$ are the minimum Kondo temperature of a ridge and the superconducting order parameter, respectively. Our observation is consistent with measurements of the critical current, and is supported by numerical renormalization group calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microwave Enhancement of Phase Slip Rate in Quasi One-Dimensional Superconducting Nanowires

We study current-voltage (V-I) characteristics of short superconducting nanowires of length ~ 100 nm exposed to microwave radiation of frequencies between 100 MHz and 15 GHz. The radiation causes a decrease of the average switching current of the wire. This suppression of the switching current is modeled assuming that there is one-to-one correspondence between Little's phase slips and the experimentally observed switching events. At some critical power P* of the radiation a dissipative dynamic superconducting state occurs as an extra step on the V-I curve. It is identified as a phase slip center (PSC). With the dependence of the switching currents and the standard deviations observed at the transitions (i) from a constant supercurrent state to a normal state and (ii) from a constant superconducting state to a PSC state, we conclude that both of the two types of the switching events are triggered by the same microscopic event, namely a single Little's phase slip. We show that the Skocpol-Beasely-Tinkham model is not applicable to our microwave-driven phase slip centers, since it leads to an unphysical small estimated value of the size of the dissipative core of the PSC. Through the analysis of the witching current distributions at a sufficiently low temperature, we also present evidence that the quantum phase slip play a role in switching events under microwaves.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Heat Conduction across Monolayer and Few-Layer Graphenes

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Imaging, simulation, and electrostatic control of power dissipation in graphene devices

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs. bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provides a non-invasive approach for more deeply examining transport and energy dissipation in nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies

We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate-dependence of the elastic scattering terms suggests that the effect of trigonal warping, i.e., the non-linearity of the dispersion curves, may be strong at high carrier densities, while intra-valley scattering may dominate close to the Dirac point. In addition, a decrease in UCF amplitude with decreasing carrier density can be explained by a corresponding loss of phase coherence.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mobility and Saturation Velocity in Graphene on SiO2

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10^12 cm^-2. Saturation velocity is >3x10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2x10^13 cm^-2. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity

We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL), universal conductance fluctuations (UCF), and inhomogeneous charge transport. A clear WL signal is evident at all measured gate voltages (in the hole doped regime) and temperature ranges (from 0.25 K to 4.3 K), and the phase coherence length extracted from WL data does not saturate at low temperatures. The WL data is fit to demonstrate that electron-electron Nyquist scattering is the major source of phase decoherence. A decrease in UCF amplitude with increasing gate voltage and temperature is shown to be consistent with a corresponding decrease in the phase coherence length. In addition, a weak positive magnetoresistance at higher magnetic fields is observed, and attributed to inhomogeneous charge transport.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)

We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si), and is particularly useful in the range n>4 where few methods exist. We compare our results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Lastly, we apply our method to unambiguously identify n of FLG devices and find that the mobility (~2000 cm2 V-1 s-1) is independent of layer thickness for n>4.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Coexisting multiple dynamic states generated by magnetic field in Bi-2212 stacked Josephson junctions

Josephson vortices in naturally stacked Bi-2212 tunneling junctions display rich dynamic behavior that derives from the coexistence of three basic states: static Josephson vortex lattice, coherently moving lattice, and incoherent quasiparticle tunneling state. Rich structure of hysteretic branches observed in the current-voltage characteristics can be understood as combinatorial combinations of these three states which are realized in different junctions and evolve separately with magnetic field and bias current. In particular, the multiple Josephson-vortex-flow branches at low bias currents arise from the individual depinning of Josephson vortex rows in each junction.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Current-phase Relationship, Thermal and Quantum Phase Slips in Superconducting Nanowires made on Scaffold Created using Adhesive Tape

Quantum phase slippage (QPS) in a superconducting nanowire is a new candidate for developing a quantum bit. It has also been theoretically predicted that the occurrence of QPS significantly changes the current-phase relationship (CPR) of the wire due to the tunneling between topologically different metastable states. We present studies on the microwave response of the superconducting nanowires to reveal their CPRs. First, we demonstrate a simple nanowire fabrication technique, based on commercially available adhesive tapes, which allows making thin superconducting wire from different metals. We compare the resistance vs. temperature curves of Mo$_{76}$Ge$_{24}$ and Al nanowires to the classical and quantum models of phase slips. In order to describe the experimentally observed microwave responses of these nanowires, we use the McCumber-Stewart model, which is generalized to include either classical or quantum CPR.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Probing individual topological tunnelling events of a quantum field via their macroscopic consequences

Phase slips are topological fluctuation events that carry the superconducting order-parameter field between distinct current carrying states. Owing to these phase slips low-dimensional superconductors acquire electrical resistance. In quasi-one-dimensional nanowires it is well known that at higher temperatures phase slips occur via the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed via quantum tunnelling events, which are known as quantum phase slips (QPS). Here we report strong evidence for individual quantum tunnelling events undergone by the superconducting order-parameter field in homogeneous nanowires.We accomplish this via measurements of the distribution of switching currents-the high-bias currents at which superconductivity gives way to resistive behaviour-whose width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. We outline a stochastic model of phase slip kinetics which relates the basic phase slip rates to switching rates. Comparison with this model indicates that the phase predominantly slips via thermal activation at high temperatures but at sufficiently low temperatures switching is caused by individual topological tunnelling events of the order-parameter field, i.e., QPS. Importantly, measurements on several wires show that quantum fluctuations tend to dominate over thermal fluctuations at larger temperatures in wires having larger critical currents. This fact provides strong supports the view that the anomalously high switching rates observed at low temperatures are indeed due to QPS, and not consequences of extraneous noise or hidden inhomogeneity of the wire.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Josephson-vortex-flow terahertz emission in layered high-$T_c$ superconducting single crystals

We report on the successful terahertz emission (0.6$\sim$1 THz) that is continuous and tunable in its frequency and power, by driving Josephson vortices in resonance with the collective standing Josephson plasma modes excited in stacked Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ intrinsic Josephson junctions. Shapiro-step detection was employed to confirm the terahertz-wave emission. Our results provide a strong feasibility of developing long-sought solid-state terahertz-wave emission devices.

0 citations0 reviewsNo code linkedOpen access