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David G. Cahill

David G. Cahill appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.med-ph

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Published work

17 published item(s)

preprint2023arXiv

Electron paramagnetic resonance of n-type silicon and germanium for applications in 3D thermometry

While several 2D thermometry techniques exist, there is a lack of 3D thermometry techniques that work for wide range of materials and offer good resolution in time, space and temperature. X-ray diffraction (XRD) and nuclear magnetic resonance (NMR) imaging can provide 3D temperature information. However, XRD is typically limited to crystalline materials while NMR is largely limited to liquids where the resonance lines are narrow. We investigate electron paramagnetic resonance (EPR) of n-type silicon and germanium for 3D thermometry. While in germanium the EPR linewidths are too broad, EPR linewidths in silicon are reasonably narrow and exhibit a strong temperature dependence. The temperature dependence of the spin-lattice relaxation rate (1/T1) of conduction electrons in n-type Si for low dopant concentrations follows a T^3 law due to phonon broadening. For heavily doped Si, which is desirable for good signal to noise ratio (SNR) for application in thermometry, impurity scattering is expected to decrease the temperature dependence of 1/T1. Our results show, in heavily doped n-type Si, spin-lattice relaxation induced by impurity scattering does not drastically decrease the temperature dependence of EPR linewidths. In P-doped Si with donor concentration of 7 x 10^18 /cm^3, the EPR linewidth has a T^(5/2) temperature dependence; the temperature dependence decreases to T^(3/2) when the donor concentration is 7 x 10^19 /cm^3. While the temperature dependence of linewidth decreases for heavier doping, EPR linewidth is still a sensitive thermometer. We define a figure of merit for SNR for thermometry from EPR linewidths of n-type Si and observe that increasing the doping results in a better SNR. Using effective medium theory, we show that EPR linewidth can be a sensitive thermometer for application in 3D thermometry with systems embedding microparticles of heavily doped n-type Si.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Highly sensitive and high throughput magnetic resonance thermometry using superparamagnetic nanoparticles

Magnetic resonance imaging (MRI) enables non-invasive 3D thermometry during thermal ablation of cancerous tumors. While T1 or T2 contrast MRI are relatively insensitive to temperature, techniques with greater temperature sensitivity such as chemical shift or diffusion imaging suffer from motional artifacts and long scan times. We describe an approach for highly sensitive and high throughput MR thermometry that is not susceptible to motional artifacts. We use superparamagnetic iron oxide nanoparticles (SPIONs) to spoil T2 of water protons. Motional narrowing results in proportionality between T2 and the diffusion constant, dependent only on the temperature in a specific environment. Our results show, for pure water, the nuclear magnetic resonance (NMR) linewidth and T2 follow the same temperature dependence as the self-diffusion constant of water. Thus, T2 mapping is a diffusion mapping in the presence of SPIONs, and T2 is a thermometer. For pure water, a T2 mapping of a 64 x 64 image (voxel size = 0.5 mm x 0.5 mm x 3 mm) in a 9.4 T MRI scanner resulted in a temperature resolution of 0.5 K for a scan time of 2 minutes. This indicates a highly sensitive and high throughput MR thermometry technique potentially useful for monitoring of biological tissues during thermal therapies or for diagnosis.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Simultaneous mapping of temperature and hydration in proton exchange membrane of fuel cells using magnetic resonance imaging

The efficiency of a proton exchange membrane (PEM) fuel cell depends on the mobility of protons in the PEM, which is determined by the hydration and temperature of the membrane. While optical techniques or neutron or x-ray scattering techniques may be used to study the inhomogeneities in hydration and temperature in PEMs, these techniques cannot provide 3 dimensional spatial resolution in measuring layered PEMs. Due to their ability to provide non-invasive 3D images, spin-lattice relaxation time (T1) and spin-spin relaxation time (T2) contrast magnetic resonance imaging (MRI) of protons in PEMs have been suggested as methods to map hydration in the fuel cells. We show that while T1 and T2 imaging may be used to map hydration in PEMs under isothermal conditions, proton T1 and T2 are also a function of temperature. For PEM fuel cells, where current densities are large and thermal gradients are expected, T1 and T2 relaxation times cannot be used for mapping hydration. The chemical shift of the mobile proton is, however, a strong function of hydration but not temperature. Therefore, chemical shift imaging (CSI) can be used to map hydration. The diffusion constant of the mobile proton, which can be determined by pulsed field gradient NMR, increases with both temperature and hydration. Therefore, CSI followed by imaging of diffusion via pulsed field gradients can be used for separate mappings of hydration and temperature in PEMs. Here, we demonstrate a 16 x 16 pixel MRI mapping of hydration and temperature in Nafion PEMs with a spatial resolution of 1 mm x 1 mm, a total scan time of 3 minutes, a temperature resolution of 6 K, and an uncertainty in hydration within 15%. The demonstrated mapping can be generalized for imaging exchange membranes of any fuel cells or flow batteries.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological Metal MoP Nanowire for Interconnect

The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermal conductivity of intercalation, conversion, and alloying lithium-ion battery electrode materials as function of their state of charge

Upon insertion and extraction of lithium, materials important for electrochemical energy storage can undergo changes in thermal conductivity ($Λ$) and elastic modulus ($\it M$). These changes are attributed to evolution of the intrinsic thermal carrier lifetime and interatomic bonding strength associated with structural transitions of electrode materials with varying degrees of reversibility. Using in situ time-domain thermoreflectance (TDTR) and picosecond acoustics, we systemically study $Λ$ and $\it M$ of conversion, intercalation and alloying electrode materials during cycling. The intercalation V$_{2}$O$_{5}$ and TiO$_{2}$ exhibit non-monotonic reversible $Λ$ and $\it M$ switching up to a factor of 1.8 ($Λ$) and 1.5 ($\it M$) as a function of lithium content. The conversion Fe$_{2}$O$_{3}$ and NiO undergo irreversible decays in $Λ$ and $\it M$ upon the first lithiation. The alloying Sb shows the largest and partially reversible order of the magnitude switching in $Λ$ between the delithiated (18 W m$^{-1}$ K$^{-1}$) and lithiated states (<1 W m$^{-1}$ K$^{-1}$). The irreversible $Λ$ is attributed to structural degradation and pulverization resulting from substantial volume changes during cycling. These findings provide new understandings of the thermal and mechanical property evolution of electrode materials during cycling of importance for battery design, and also point to pathways for forming materials with thermally switchable properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of isotope disorder on the Raman spectra of cubic boron arsenide

Boron arsenide (c-BAs) is at the forefront of research on ultrahigh thermal conductivity materials. We present a Raman scattering study of isotopically tailored cubic boron arsenide single crystals for 11 isotopic compositions spanning the range from nearly pure c-$^{10}$BAs to nearly pure c-$^{11}$BAs. Our results provide insights on the effects of strong mass disorder on optical phonons and the appearance of two-mode behavior in the Raman spectra of mixed crystals. Strong isotope disorder also relaxes the one-phonon Raman selection rules, resulting in disorder-activated Raman scattering by acoustic phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetocrystalline anisotropy of the easy-plane metallic antiferromagnet Fe$_2$As

Magnetocrystalline anisotropy is a fundamental property of magnetic materials that determines the dynamics of magnetic precession, the frequency of spin waves, the thermal stability of magnetic domains, and the efficiency of spintronic devices. We combine torque magnetometry and density functional theory calculations to determine the magnetocrystalline anisotropy of the metallic antiferromagnet Fe$_2$As. Fe$_2$As has a tetragonal crystal structure with the Néel vector lying in the (001) plane. We report that the four-fold magnetocrystalline anisotropy in the (001)-plane of Fe$_2$As is extremely small, ${K_{22}} = - 150~{\rm{ J/}}{\rm{m}^{\rm{3}}}$ at T = 4 K, much smaller than perpendicular magnetic anisotropy of ferromagnetic structure widely used in spintronics device. ${K_{22}}$ is strongly temperature dependent and close to zero at T > 150 K. The anisotropy ${K_1}$ in the (010) plane is too large to be measured by torque magnetometry and we determine ${K_1} = -830~{\rm{ kJ/}}{\rm{m}^{\rm{3}}}$ using first-principles density functional theory. Our simulations show that the contribution to the anisotropy from classical magnetic dipole-dipole interactions is comparable to the contribution from spin-orbit coupling. The calculated four-fold anisotropy in the (001) plane ${K_{22}}$ ranges from $- 292~{\rm{ J/}}{\rm{m}^{\rm{3}}}$ to $280~{\rm{ J/}}{\rm{m}^{\rm{3}}}$, the same order of magnitude as the measured value. We use ${K_1}$ from theory to predict the frequency and polarization of the lowest frequency antiferromagnetic resonance mode and find that the mode is linearly polarized in the (001)-plane with $f = $ 670 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magneto-optic Response of the Metallic Antiferromagnet Fe$_{2}$As to Ultrafast Temperature Excursions

The linear magneto-optical Kerr effect (MOKE) is often used to probe magnetism of ferromagnetic materials, but MOKE cannot be applied to collinear antiferromagnets (AFs) due to the cancellation of sub-lattice magnetization. Magneto-optical constants that are quadratic in magnetization, however, provide an approach for studying AFs on picosecond time scales. Here, we combine transient measurements of optical reflectivity and birefringence to study the linear optical response of Fe$_{2}$As to small ultrafast temperature excursions. We performed temperature dependent pump-probe measurements on crystallographically isotropic (001) and anisotropic (010) faces of Fe$_{2}$As bulk crystals. We find the largest optical signals arise from changes in the index of refraction along the $z$-axis, i.e. perpendicular to the Néel vector. Both real and imaginary parts of the time-resolved optical birefringence rotation signal approximately follow the temperature dependence of the magnetic heat capacity, as expected if the changes in dielectric constants are dominated by contributions of exchange interactions to the dielectric constant. We conclude that under our experimental conditions, changes in the exchange interaction contribute more strongly to the temperature dependence of the magneto-optic constants than the Voigt effect.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Non-Equilibrium Heat Transport in Pt and Ru Probed by an Ultrathin Co Thermometer

Non-equilibrium of electrons, phonons, and magnons in metals is a fundamental phenomenon in condensed matter physics and serves as an important driver in the field of ultrafast magnetism. In this work, we demonstrate that the magnetization of a sub-nm-thick Co layer with perpendicular magnetic anisotropy can effectively serve as a thermometer to monitor non-equilibrium dynamics in adjacent metals, Pt and Ru, via time-resolved magneto-optic Kerr effect. The temperature evolutions of the Co thermometer embedded in Pt layers of different thicknesses, 6-46 nm, are adequately described by a phenomenological three temperature model with a consistent set of materials parameters. We do not observe any systematic deviations between the model and the data that can be caused by a non-thermal distribution of electronic excitations. We attribute the consistently good agreement between the model and the data to strong electron-electron interaction in Pt. By using Pt/Co/Pt and Pt/Co/Pt/Ru structures, we determine the electron-phonon coupling parameters of Pt and Ru, g_ep(Pt)=(6+/-1)x10^17 W m-3 K-1 and g_ep(Ru)=(9+/-2)x10^17 W m-3 K-1. We also find that the length scales of non-equilibrium between electrons and phonons are l_ep=(Λ_e/g_ep)^1/2 =9 nm for Pt and 7 nm for Ru, shorter than their optical absorption depths, 11 and 13 nm, respectively. Therefore, the optically thick Pt and Ru layers show two steps of temperature rise: The initial jump of electron temperature that occurs within 1 ps is caused by direct optical excitation and electronic heat transport within a distance l_ep for the Co layer. The second temperature rise is caused by heat transport by electrons and phonons that are near thermal equilibrium. We contrast two-temperature modeling of heat transport in Pt an Ru films to calculations for Cu, which has a much longer non-equilibrium length scale, l_ep=63 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thermal Conductivity of Oxide Tunnel Barriers in Magnetic Tunnel Junctions Measured by Ultrafast Thermoreflectance and Magneto-optic Kerr Effect Thermometry

Spin-dependent charge transport in magnetic tunnel junctions (MTJs) can be manipulated by a temperature gradient, which can be utilized for spintronic and spin caloritronic applications. Evaluation of the thermally induced phenomena requires knowledge of the temperature differences across the oxide tunnel barrier adjacent to the ferromagnetic (FM) leads. However, it is challenging to accurately measure thermal properties of an oxide tunnel barrier consisting of only a few atomic layers. In this work, we experimentally interrogate the temperature evolutions in Ru/oxide/FM/seed/MgO (oxide=MgO, MgAl2O4; FM=Co, CoFeB; seed=Pt, Ta) structures having perpendicular magnetic anisotropy using ultrafast thermometry. The Ru layer is optically thick and heated by ultrafast laser pulses; the subsequent temperature changes are monitored using thermoreflectance of Ru and magneto-optic Kerr effect (MOKE) of the FM layers. We independently measure the response times of Co and CoFeB magnetism using quadratic MOKE and obtain τem=0.2 ps for Co and 2 ps for CoFeB. These time scales are much shorter than the time scale of heat transport through the oxide tunnel barrier, which occurs at 10-3000 ps. We determine effective thermal conductivities of MgO and MgAl2O4 tunnel barriers in the range of 0.4-0.6 W m-1 K-1, comparable to an estimate of the series conductance of the Ru/oxide and oxide/FM interfaces and an order of magnitude smaller than the thermal conductivity of MgO thin films. We find that the electron-phonon thermal conductance near the tunnel barrier is only a factor of 5-12 larger than the thermal conductance of the oxide tunnel barrier. Therefore, the drop in the electronic temperature is approximately 20-30% larger than the drop in the phonon temperature across the tunnel barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of remote interfacial phonon (RIP) scattering in heat transport across graphene/SiO2 interfaces

Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique, called voltage-modulated thermoreflectance (VMTR), to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG=0.8 MW m-2 K-1 under electrostatic fields of <0.2 V nm-1 . We propose two possible explanations for the observed ΔG. First, since the applied electrostatic field induces charge carriers in graphene, our VMTR measurements could originate from heat transfer between the charge carriers in graphene and RIPs in SiO2. Second, the increase in heat conduction could be caused by better conformity of graphene interfaces un-der electrostatic pressure exerted by the induced charge carriers. Regardless of the origins of the observed ΔG, our VMTR measurements establish an upper limit for heat transfer from unbiased graphene to SiO2 substrates via RIP scattering; i.e., only <2 % of the interfacial heat transport is facilitated by RIP scattering even at a carrier concentration of 4x10^12 cm-2.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus

We ascertain the anisotropic thermal conductivity of alumina passivated black phosphorus (BP), a reactive 2D nanomaterial with strong in-plane anisotropy. We measure the room temperature thermal conductivity by time-domain thermoreflectance for the three crystalline axes of exfoliated BP. The thermal conductivity along the zigzag direction (86 +/- 8 W/(m*K)) is ~2.5 times higher than that of the armchair direction (34 +/- 4 W/(m*K)).

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Micro- and Nano-scale Measurement Methods for Phase Change Heat Transfer on Planar and Structured Surfaces

In this opinion piece, we discuss recent advances in experimental methods for characterizing phase change heat transfer. We begin with a survey of techniques for high-resolution measurements of temperature and heat flux at the solid surface and in the working fluid. Next, we focus on diagnostic tools for boiling heat transfer and describe techniques for visualizing the temperature and velocity fields, as well as measurements at the single bubble level. Finally, we discuss techniques to probe the kinetics of vapor formation within a few molecular layers of the interface. We conclude with our outlook for future progress in experimental methods for phase change heat transfer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit

We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally results from Ge segregation during growth, plays a determinant role, lowering the thermal conductivity below what could be achieved without interdiffusion (perfect superlattice), or with total interdiffusion (alloy limit). This phenomenon is similar to the one previously observed in alloys with embedded nanoparticles, and it stresses the importance of combining alloy and nanosized scatterers simultaneously to minimize thermal conductivity. Our calculations thus suggest that superlattices with sharp interfaces, which are commonly sought but difficult to realize, are worse than compositionally-modulated Si1-xGex multilayers in the search for materials with ultralow thermal conductivities.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Heat Conduction across Monolayer and Few-Layer Graphenes

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films

SrTiO$_3$ is a promising $n$-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO$_3$ doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition (PLD). The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 K to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit ($ZT$) was measured to be 0.28 at 873 K at a carrier concentration of $2.5\times10^{21}$ cm$^{-3}$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)

We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si), and is particularly useful in the range n>4 where few methods exist. We compare our results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Lastly, we apply our method to unambiguously identify n of FLG devices and find that the mobility (~2000 cm2 V-1 s-1) is independent of layer thickness for n>4.

0 citations0 reviewsNo code linkedOpen access