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Yaping Dan

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el physics.optics

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preprint2021arXiv

Far-Field Super-Resolution Imaging By Nonlinear Excited Evanescent Waves

Abbe's resolution limit, one of the best-known physical limitations, poses a great challenge for any wave systems in imaging, wave transport, and dynamics. Originally formulated in linear optics, this Abbe's limit can be broken using nonlinear optical interactions. Here we extend the Abbe theory into a nonlinear regime and experimentally demonstrate a far-field, label-free, and scan-free super-resolution imaging technique based on nonlinear four-wave mixing to retrieve near-field scattered evanescent waves, achieving sub-wavelength resolution of $λ/15.6$. This method paves the way for application in biomedical imaging, semiconductor metrology, and photolithography.

preprint2014arXiv

Optoelectronically probing the density of nanowire surface trap states to the single state limit

Due to the large surface-to-volume ratio, surface trap states play a dominant role in the optoelectronic properties of nanoscale devices(1-6). Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques based on metal-insulator-semiconductor (MIS) structures(7) and deep level transient spectroscopy (DLTS)(8-11). Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the limit of a single trap state. Unlike traditional capacitive techniques (Fig1a), in this method we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states (Fig1b). The experimental data show that the energy density of nanowire surface trap states is in a range from 10^9cm^-2/eV at deep levels to 10^12cm^-2/eV in the middle of the upper half bandgap. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

preprint2014arXiv

Self-aligned process for forming microlenses at the tips of vertical silicon nanowires by atomic layer deposition

The microlens is a key enabling technology in optoelectronics, permitting light to be efficiently coupled to and from devices such as image sensors and light-emitting diodes. Their ubiquitous nature motivates the development of new fabrication techniques, since existing methods face challenges as microlenses are scaled to smaller dimensions. Here, we demonstrate the formation of microlenses at the tips of vertically-oriented silicon nanowires via a rapid atomic layer deposition (ALD) process. The nature of the process is such that the microlenses are centered on the nanowires, and there is a self-limiting effect on the final sizes of the microlenses arising from the nanowire spacing. Finite difference time domain electromagnetic simulations are performed of microlens focusing properties, including showing their ability to enhance visible-wavelength absorption in silicon nanostructures.

preprint2011arXiv

Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires

Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude,[9] often resulting in the low efficiency (a few percent or less) of nanowire-based solar cells. [7, 8, 10, 11] Reducing the recombination by surface passivation is crucial for the realization of high performance nanosized optoelectronic devices, but remains largely unexplored. [7, 12-14] Here we show that a thin layer of amorphous silicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW), forming a core-shell structure in-situ in the vapor-liquid-solid (VLS) process, reduces the surface recombination nearly two orders of magnitude. Under illumination of modulated light, we measure a greater than 90-fold improvement in the photosensitivity of individual core-shell nanowires, compared to regular nanowires without shell. Simulations of the optical absorption of the nanowires indicate that the strong absorption of the a-Si shell contributes to this effect, but we conclude that the effect is mainly due to the enhanced carrier lifetime by surface passivation.

preprint2010arXiv

Size-selective nanoparticle growth on few-layer graphene films

We observe that gold atoms deposited by physical vapor deposition onto few layer graphenes condense upon annealing to form nanoparticles with an average diameter that is determined by the graphene film thickness. The data are well described by a theoretical model in which the electrostatic interactions arising from charge transfer between the graphene and the gold particle limit the size of the growing nanoparticles. The model predicts a nanoparticle size distribution characterized by a mean diameter D that follows a scaling law D proportional to m^(1/3), where m is the number of carbon layers in the few layer graphene film.

preprint2008arXiv

Gas Sensing Properties of Single Conducting Polymer Nanowires and the Effect of Temperature

We measured the electronic properties and gas sensing responses of template-grown poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS)-based nanowires. The nanowires have a "striped" structure (gold-PEDOT/PSS-gold), typically 8um long (1um-6um-1um for each section, respectively) and 220 nm in diameter. Single-nanowire devices were contacted by pre-fabricated gold electrodes using dielectrophoretic assembly. A polymer conductivity of 11.5 +/- 0.7 S/cm and a contact resistance of 27.6 +/- 4 kOhm were inferred from measurements of nanowires of varying length and diameter. The nanowire sensors detect a variety of odors, with rapid response and recovery (seconds). The response (R-R0)/R0 varies as a power law with analyte concentration.