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Yangyang Wang

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Published work

19 published item(s)

preprint2026arXiv

Dynamical mechanisms of flexible phase-locking in cortical theta oscillators

Oscillatory activity in auditory cortex is thought to play a central role in auditory and speech processing by synchronizing neural rhythms to external acoustic features of the speech stream. To support this function, cortical oscillators must flexibly phase-lock to inputs spanning a wide range of timescales, including rhythms substantially slower than their intrinsic frequency. Here we identify a general dynamical mechanism by which intrinsic inhibitory currents operating on multiple timescales enable such flexible phase-locking. Using tools from dynamical systems theory, we show that interactions between slow and superslow inhibitory processes generate prolonged post-input recovery delays through delayed Hopf phenomena, thereby substantially expanding the frequency range over which entrainment can occur. We demonstrate this mechanisms in a biophysically grounded cortical theta oscillator model for speech segmentation. Specifically, we show that both a theta-timescale (4-8 Hz) inhibitory current $I_m$ and a slower delta-timescale (1-4 Hz) inhibitory potassium current $I_{\rm K_{SS}}$ are crucial for entrainment flexibility. Their interaction creates a three-timescale structure that gives rise to pronounced delay phenomena associated with a delayed Hopf bifurcation (DHB). Interestingly, the superslow $I_{\rm K_{SS}}$ and the associated DHB play little role in the unforced oscillatory dynamics, but are recruited to support phase locking under external forcing. Moreover, the intermediate-timescale current $I_m$, rather than being redundant, further expands the phase-locking range by prolonging delayed recovery along the superslow manifold. Together, these results suggest that coordination among intrinsic inhibitory currents operating on multiple timescales may represent a key mechanism supporting flexible phase locking to rhythmic inputs in the brain.

preprint2024arXiv

PLE-SLAM: A Visual-Inertial SLAM Based on Point-Line Features and Efficient IMU Initialization

Visual-inertial SLAM is crucial in various fields, such as aerial vehicles, industrial robots, and autonomous driving. The fusion of camera and inertial measurement unit (IMU) makes up for the shortcomings of a signal sensor, which significantly improves the accuracy and robustness of localization in challenging environments. This article presents PLE-SLAM, an accurate and real-time visual-inertial SLAM algorithm based on point-line features and efficient IMU initialization. First, we use parallel computing methods to extract features and compute descriptors to ensure real-time performance. Adjacent short line segments are merged into long line segments, and isolated short line segments are directly deleted. Second, a rotation-translation-decoupled initialization method is extended to use both points and lines. Gyroscope bias is optimized by tightly coupling IMU measurements and image observations. Accelerometer bias and gravity direction are solved by an analytical method for efficiency. To improve the system's intelligence in handling complex environments, a scheme of leveraging semantic information and geometric constraints to eliminate dynamic features and A solution for loop detection and closed-loop frame pose estimation using CNN and GNN are integrated into the system. All networks are accelerated to ensure real-time performance. The experiment results on public datasets illustrate that PLE-SLAM is one of the state-of-the-art visual-inertial SLAM systems.

preprint2022arXiv

BGP-Multipath Routing in the Internet

BGP-Multipath (BGP-M) is a multipath routing technique for load balancing. Distinct from other techniques deployed at a router inside an Autonomous System (AS), BGP-M is deployed at a border router that has installed multiple inter-domain border links to a neighbour AS. It uses the equal-cost multi-path (ECMP) function of a border router to share traffic to a destination prefix on different border links. Despite recent research interests in multipath routing, there is little study on BGP-M. Here we provide the first measurement and a comprehensive analysis of BGP-M routing in the Internet. We extracted information on BGP-M from query data collected from Looking Glass (LG) servers. We revealed that BGP-M has already been extensively deployed and used in the Internet. A particular example is Hurricane Electric (AS6939), a Tier-1 network operator, which has implemented >1,000 cases of BGP-M at 69 of its border routers to prefixes in 611 of its neighbour ASes, including many hyper-giant ASes and large content providers, on both IPv4 and IPv6 Internet. We examined the distribution and operation of BGP-M. We also ran traceroute using RIPE Atlas to infer the routing paths, the schemes of traffic allocation, and the delay on border links. This study provided the state-of-the-art knowledge on BGP-M with novel insights into the unique features and the distinct advantages of BGP-M as an effective and readily available technique for load balancing.

preprint2022arXiv

Variational and phase response analysis for limit cycles with hard boundaries, with applications to neuromechanical control problems

Motor systems show an overall robustness, but because they are highly nonlinear, understanding how they achieve robustness is difficult. In many rhythmic systems, robustness against perturbations involves response of both the shape and the timing of the trajectory. This makes the study of robustness even more challenging. To understand how a motor system produces robust behaviors in a variable environment, we consider a neuromechanical model of motor patterns in the feeding apparatus of the marine mollusk \textit{Aplysia californica} \citep{shaw2015,lyttle2017}. We established in \citep{WGCT2021} the tools for studying combined shape and timing responses of limit cycle systems under sustained perturbations and here apply them to study robustness of the neuromechanical model against increased mechanical load during swallowing. Interestingly, we discover that nonlinear biomechanical properties confer resilience by immediately increasing resistance to applied loads. In contrast, the effect of changed sensory feedback signal is significantly delayed by the firing rates' hard boundary properties. Our analysis suggests that sensory feedback contributes to robustness in swallowing primarily by shifting the timing of neural activation involved in the power stroke of the motor cycle (retraction). This effect enables the system to generate stronger retractor muscle forces to compensate for the increased load, and hence achieve strong robustness. The approaches that we are applying to understanding a neuromechanical model in \textit{Aplysia}, and the results that we have obtained, are likely to provide insights into the function of other motor systems that encounter changing mechanical loads and hard boundaries, both due to mechanical and neuronal firing properties.

preprint2015arXiv

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.

preprint2015arXiv

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

preprint2015arXiv

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in the two types of contacts and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

preprint2015arXiv

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

preprint2015arXiv

Silicene Nanomesh

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

preprint2015arXiv

Silicene on Substrates: A Theoretical Perspective

Silicene, as the silicon analog of graphene, has been successfully fabricated by epitaxial growing on various substrates. Similar to free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-cone-shaped energy band, resulting in many fascinating properties such as high carrier mobility, quantum spin Hall effect, quantum anomalous Hall effect, and quantum valley Hall effect. The maintenance of the honeycomb crystal structure and the Dirac cone of silicene is crucial for observation of its intrinsic properties. In this review, we systematically discuss the substrate effects on the atomic structure and electronic properties of silicene from a theoretical point of view, especially focusing on the changes of the Dirac cone.

preprint2015arXiv

Silicene Spintronics

Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate numerous researchers into the studies of spintronics in graphene and other two-dimensional (2D) materials. Silicene, silicon analog of graphene, is considered as a promising material for spintronics. Here, we present a review on the theoretical advances about the spin-dependent properties including the electric field and exchange field tunable topological properties of silicene and the corresponding spintronic device simulations.

preprint2014arXiv

Does the Dirac Cone Exist in Silicene on Metal Substrates?

Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir, Cu, Mg, Au, Pt, Al, and Ag substrates. The destroyed Dirac cone of silicene, however, can be effectively restored with linear or parabolic dispersion by intercalating alkali metal atoms between silicene and the metal substrates, offering an opportunity to study the intriguing properties of silicene without further transfer of silicene from the metal substrates.

preprint2014arXiv

Graphdiyne-metal contacts and graphdiyne transistors

Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we systematically studied for the first time the interfacial properties of graphdiyne contacting with a series of metals (Al, Ag, Cu, Au, Ir, Pt, Ni, and Pd). Graphdiyne is in an n-type Ohmic or quasi-Ohmic contact with Al, Ag, and Cu, while it is in a Schottky contact with Au (at source/drain interface), Pd, Pt, Ni, and Ir (at source/drain-channel interface), with high Schottky barrier heights of 0.39, 0.21 (n-type), 0.30, 0.41, and 0.45 (p-type) eV, respectively. A graphdiyne field effect transistor (FET) with Al electrodes is simulated by using quantum transport calculations. This device exhibits an on-off ratio up to 104 and a very large on-state current of 1.3 * 104 mA/mm in a 10 nm channel length. Thus, a new prospect is opened up for graphdiyne in high performance nanoscale devices.

preprint2013arXiv

Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

preprint2013arXiv

Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates

One popular approach to prepare graphene is to grow them on transition metal substrates via chemical vapor deposition. By using the density functional theory with dispersion correction, we systematically investigate for the first time the interfacial properties of bilayer (BLG) and trilayer graphene (TLG) on metal substrates. Three categories of interfacial structures are revealed. The adsorption of B(T)LG on Al, Ag, Cu, Au, and Pt substrates is a weak physisorption, but a band gap can be opened. The adsorption of B(T)LG on Ti, Ni, and Co substrates is a strong chemisorption, and a stacking-insensitive band gap is opened for the two uncontacted layers of TLG. The adsorption of B(T)LG on Pd substrate is a weaker chemisorption, with a band gap opened for the uncontacted layers. This fundamental study also helps for B(T)LG device study due to inevitable graphene/metal contact.

preprint2013arXiv

Strong Band Hybridization between Silicene and Ag(111)Substrate

By using first-principles calculations, we systematically investigated several observed phases of silicene on Ag(111) substrates and their electronic structures. We find that the original Dirac cone of silicene is about 1.5-1.7 eV deeply below the Fermi level and severely destroyed by the band hybridization between silicene and Ag in all the examined phases. Thus, silicene synthesized on Ag(111) substrates could not preserve its excellent electronic property and new method is needed to develop in synthesizing silicene with its Dirac cone surviving.

preprint2013arXiv

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

Structural and electronic properties of silicene adsorbed by five kinds of transition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied by using first-principles calculations. We find that such adsorption can induce a band gap at the Dirac point of doped silicene. Doped silicene can reach a band gap up to 0.23 eV while keeping a relatively small effective mass of around 0.1 me, thus having high carrier mobility estimated to be 50000 cm2/Vs. P-type doping and neutral state is realized in silicene by Ir and Pt adsorption, respectively, while n-type doping is done by Cu, Ag, and Au adsorption. Based on the knowledge above, a silicene p-i-n tunneling field effect transistor (TFET) is proposed and simulated by both first-principles and semi-empirical approaches. Silicene TFET shows high performance with an on-off ratio of 10^3, a sub-threshold swing of 90 mV/dec, and an on-state current of 1 mA/μm. Such an on-state current is even larger than that of most other existing TFETs.

preprint2013arXiv

Tunable band gap in few-layer graphene by surface adsorption

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance individually. Using first principle calculations, we propose an alternative scheme to open a band gap in ABC-stacked FLG namely via single-side adsorption. The band gap is generally proportional to the charge transfer density. The capability to open a band gap of metal adsorption decreases in this order: K/Al > Cu/Ag/Au > Pt. Moreover, we find that even the band gap of ABA-stacked FLG can be opened if the bond symmetry is broken. Finally, a single-gated FET based on Cu-adsorbed ABC-stacked trilayer graphene is simulated. A clear transmission gap is observed, which is comparable with the band gap. This renders metal-adsorbed FLG a promising channel in a single-gated FET device.

preprint2013arXiv

Tunable band gap in germanene by surface adsorption

Opening a sizable band gap in the zero-gap germanene without heavy loss of carrier mobility is a key issue for its application in nanoelectronic devices such as high-performance field effect transistors (FETs) operating at room temperature. Using the first-principles calculations, we find a band gap is opened at the Dirac point in germanene by single-side adsorption of alkali metal (AM) atoms. This band gap is tunable by varying the coverage and the species of AM atoms, ranging from 0.02 to 0.31 eV, and the maximum global band gap is 0.26 eV. Since the effective masses of electrons and holes in germanene near the Dirac point after surface adsorption (ranging from 0.005 to 0.106 me) are small, the carrier mobility is expected not to degrade much. Therefore germanene is a potential candidate of effective FET channel operating at room temperature upon surface adsorption.