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Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

preprint2013arXivOpen access
Yangyang WangJiaxin ZhengZeyuan NiRuixiang FeiQihang LiuRuge QuheChengyong XuJing ZhouZhengxiang GaoJing Lu
cond-mat.mes-hallcond-mat.mtrl-sci
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Yangyang WangJiaxin ZhengZeyuan NiRuixiang FeiQihang LiuRuge QuheChengyong XuJing ZhouZhengxiang GaoJing Lu

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