Researcher profile

Jian-Jun Liu

Jian-Jun Liu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2020arXiv

Valley polarization and valleyresistance in monolayer transition metal dichalcogenides superlattice

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and regulate valley-polarized currents by practical ways. Here, we discover a new mechanism of producing valley polarization in a monolayer transition metal dichalcogenides superlattice, in which valley-resolved gaps are formed at the supercell Brillouin zone boundaries and centers due to the intervalley scattering. When the energy of the incident electron is in the gaps, the available states are valley polarized, thus providing a valley-polarized current from the superlattice. We show that the direction and strength of the valley polarization may further be tuned by varying the potential applied the superlattice. The transmission can have a net valley polarization of 55% for a 4-period heterojunction. Moreover, such two valley filters in series may function as an electrostatically controlled giant valleyresistance device, representing a zero magnetic field counterpart to the familiar giant magnetoresistance device.

preprint2012arXiv

Pure spin current in a two-dimensional topological insulator

We predict a mechanism to generate a pure spin current in a two-dimensional topological insulator. As the magnetic impurities exist on one of edges of the two-dimensional topological insulator, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. So the conductance plateaus with the half-integer values $e^2/h$ can be obtained in the gap induced by magnetic impurities, which means that the pure spin current can be induced in the sample. We also find that the pure spin current is insensitive to weak disorder. The mechanism to generate pure spin currents is generalized for two-dimensional topological insulators.

preprint2012arXiv

Quantum spin Hall effect induced by electric field in silicene

We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.

preprint2012arXiv

Spin-polarized current induced by a local exchange field in a silicene nanoribbon

A mechanism to generate a spin-polarized current in a two-terminal zigzag silicene nanoribbon is predicted. As a weak local exchange field that is parallel to the surface of silicene is applied on one of edges of the silicene nanoribbon, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. Hence, a spin-polarized current can be induced in the gap opened by the local exchange field in this two-terminal system. What is important is that the spin-polarized current can be obtained even in the absence of Rashba spin-orbit coupling and in the case of the very weak exchange filed. That is to say, the mechanism to generate the spin-polarized currents can be easily realized experimentally.We also find that the spin-polarized current is insensitive to weak disorder.