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Y. S. Ang

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cond-mat.mes-hall cond-mat.other physics.optics

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preprint2020arXiv

Efficient generation of extreme terahertz harmonics in 3D Dirac semimetals

Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations and complementary analytical theory, we show that 3D Dirac semimetals (DSMs) have enormous potential as compact sources of extreme terahertz harmonics, achieving energy conversion efficiencies beyond $10^{-5}$ at the $31^{\rm{st}}$ harmonic with input intensities on the order of $10$ MW/cm $^2$ , over $10^5$ times lower than in conventional THz high harmonic generation systems. Our theory also reveals a fundamental feature in the nonlinear optics of 3D DSMs: a distinctive regime where higher-order optical nonlinearity vanishes, arising as a direct result of the extra dimensionality in 3D DSMs compared to 2D DSMs. Our findings should pave the way to the development of efficient platforms for high-frequency terahertz light sources and optoelectronics based on 3D DSMs.

preprint2016arXiv

Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion

In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of $J\propto \left(T^2 + γk_BT^3 \right)$ , where the non-parabolicty parameter, $γ$ , provides a smooth transition from $T^2$ to $T^3$ scaling. For few-layer graphene, it is found that $N$ -layers graphene with $ABC$ -stacking follows $J\propto T^{2/N+1}$ while $ABA$ -stacking follows a universal form of $J\propto T^3$ regardless of the number of layers. Intriguingly, the Richardson constant extracted from the Arrhenius plot using an incorrect scaling relation disagrees with the actual value by two orders of magnitude, suggesting that correct models must be used in order to extract important properties for many novel Schottky devices.

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