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Y. L. Chen

Y. L. Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.othercond-mat.supr-connucl-ex

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Published work

15 published item(s)

preprint2024arXiv

Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10

The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Hybridization and Correlation between f- and d-orbital electrons in a valence fluctuating compound EuNi2P2

The interaction between localized f and itinerant conduction electrons is crucial in the electronic properties of heavy fermion and valence fluctuating compounds. Using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structure of the archetypical valence fluctuating compound EuNi2P2 that hosts multiple f electrons. At low temperatures, we reveal the hybridization between Eu 4f and Ni 3d states, which contributes to the electron mass enhancement, consistent with the periodic Anderson model. With increasing temperature, interestingly, we observe opposite temperature evolution of electron spectral function above and below the Kondo coherence temperature near 110 K, which is in contrast to the monotonic valence change and beyond the expectation of the periodic Anderson model. We argue that both f-d hybridization and correlation are imperative in the electronic properties of EuNi2P2. Our results shed light on the understanding of novel properties, such as heavy fermion behaviors and valence fluctuation, of rare-earth transition-metal intermetallic compounds with multiple f electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of non-trivial topological electronic structure of orthorhombic SnSe

Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.

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preprint2022arXiv

Robust Kagome Electronic Structure in Topological Quantum Magnets XMn6Sn6 (X = Dy, Tb, Gd, Y)

Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6 (X = Dy, Tb, Gd, Y) family compounds. We observe the Dirac fermion and the flat band arising from the magnetic kagome lattice of Mn atoms. Interestingly, the flat band locates in the same energy region in all compounds studied, regardless of their different magnetic ground states and 4f electronic configurations. These observations suggest a robust Mn magnetic kagome lattice across the XMn6Sn6 family, thus providing an ideal platform for the search and investigation on new emergent phenomena in magnetic topological materials.

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preprint2020arXiv

Spectroscopic Signature for Local-moment Magnetism in van der Waals Ferromagnet Fe$_3$GeTe$_2$

The van der Waals ferromagnet Fe$_3$GeTe$_2$ has recently attracted extensive research attention due to its intertwined magnetic, electronic and topological properties. Here, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the temperature evolution of the electronic structure of bulk Fe$_3$GeTe$_2$. We observe largely dispersive energy bands that are narrowed by a factor of 1.6 compared with ab-initio calculation. Upon heating towards the ferromagnetic transition near 225 K, we observe a massive reduction of quasiparticle coherence in a large energy range, which is attributed to the enhanced magnetic fluctuation in the system. Remarkably, the electron bands barely shift with increasing temperature, which deviates from the exchange splitting picture within the itinerant Stoner model. We argue that the local magnetic moments play a crucial role in the ferromagnetism of Fe$_3$GeTe$_2$, despite its strongly itinerant nature. Our results provide important insights into the electronic and magnetic properties of Fe$_3$GeTe$_2$ and shed light on the generic understanding of itinerant magnetism in correlated materials.

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preprint2019arXiv

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states show little temperature dependence and remain gapless across the AFM transition. The detailed electronic structure of MnBi4Te7 and its temperature evolution, together with the results of its sister compound MnBi2Te4, will not only help understand the exotic properties of this family of magnetic TQMs, but also guide the design for possible applications.

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preprint2019arXiv

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

In the newly discovered magnetic topological insulator MnBi$_2$Te$_4$, both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure. The related (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states. Here, we report angle-resolved photoemission spectroscopy (ARPES) studies on a series of the heterostructures (MnBi$_2$Te$_4$, MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$). A universal gapless Dirac cone is observed at the MnBi$_2$Te$_4$ terminated (0001) surfaces in all systems. This is in sharp contrast to the expected gap from the original antiferromagnetic ground state, indicating an altered magnetic structure near the surface, possibly due to the surface termination. In the meantime, the electron band dispersion of the surface states, presumably dominated by the top surface, is found to be sensitive to different stackings of the underlying MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ layers. Our results suggest the high tunability of both magnetic and electronic structures of the topological surface states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures, which is essential in realizing various novel topological states.

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preprint2016arXiv

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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preprint2015arXiv

Emergence of the nematic electronic state in FeSe

We present a comprehensive study of the evolution of the nematic electronic structure of FeSe using high resolution angle-resolved photoemission spectroscopy (ARPES), quantum oscillations in the normal state and elastoresistance measurements. Our high resolution ARPES allows us to track the Fermi surface deformation from four-fold to two-fold symmetry across the structural transition at ~87 K which is stabilized as a result of the dramatic splitting of bands associated with dxz and dyz character. The low temperature Fermi surface is that a compensated metal consisting of one hole and two electron bands and is fully determined by combining the knowledge from ARPES and quantum oscillations. A manifestation of the nematic state is the significant increase in the nematic susceptibility as approaching the structural transition that we detect from our elastoresistance measurements on FeSe. The dramatic changes in electronic structure cannot be explained by the small lattice effects and, in the absence of magnetic fluctuations above the structural transition, points clearly towards an electronically driven transition in FeSe stabilized by orbital-charge ordering.

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preprint2014arXiv

Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

Cd3As2 is a candidate three-dimensional Dirac semi-metal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5K to 300K. We find the non-saturating linear magnetoresistance persist up to 65T and it is likely caused by disorder effects as it scales with the high mobility, rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behaviour with non-trivial Berry's phase shift, very light effective quasiparticle masses and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin-splitting (g~16).

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preprint2013arXiv

Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi

Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as '3D graphene'. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. The TDS is also an important boundary state mediating numerous novel quantum states, such as topological insulators, Weyl semi-metals, Axion insulators and topological superconductors. By investigating the electronic structure of Na3Bi with angle resolved photoemission spectroscopy, we discovered 3D Dirac fermions with linear dispersions along all momentum directions for the first time. Furthermore, we demonstrated that the 3D Dirac fermions in Na3Bi were protected by the bulk crystal symmetry. Our results establish that Na3Bi is the first model system of 3D TDSs, which can also serve as an ideal platform for the systematic study of quantum phase transitions between rich novel topological quantum states.

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preprint2013arXiv

Multiplicity fluctuation analysis of target residues in nucleus-emulsion collisions at a few hundred MeV/nucleon

Multiplicity fluctuation of the target evaporated fragments emitted in 290 A MeV 12C-AgBr, 400 A MeV 12C-AgBr, 400 A MeV 20Ne-AgBr and 500 A MeV 56Fe-AgBr interactions is investigated using scaled factorial moment method in two-dimensional normal phase space and cumulative variable space, respectively. It is found that in normal phase space the scaled factorial moment (ln<Fq>) increases linearly with increase of the divided number of phase space (lnM) for lower q-value and increases linearly with the increase of lnM and then becomes saturated or decreased for higher q-value, in cumulative variable space ln<Fq> decreases linearly with increase of lnM, which indicates that no evidence of non-statistical multiplicity fluctuation is observed in our data sets. So any fluctuation indicated in the results of normal variable space analysis is totally caused by non-uniformity of single-particle density distribution.

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preprint2011arXiv

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

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preprint2009arXiv

STM imaging of electronic waves on the surface of Bi$_2$Te$_3$: topologically protected surface states and hexagonal warping effects

Scanning tunneling spectroscopy studies on high-quality Bi$_2$Te$_3$ crystals exhibit perfect correspondence to ARPES data, hence enabling identification of different regimes measured in the local density of states (LDOS). Oscillations of LDOS near a step are analyzed. Within the main part of the surface band oscillations are strongly damped, supporting the hypothesis of topological protection. At higher energies, as the surface band becomes concave, oscillations appear which disperse with a particular wave-vector that may result from an unconventional hexagonal warping term.

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preprint2006arXiv

Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 for the second subband. The persistent photoconductivity effect (~13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density n1 = 9.40 x 1012 cm-2. We calculate the energy separation between the first and second subbands to be 105 meV.

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