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Researcher profile

A. J. Liang

A. J. Liang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Hybridization and Correlation between f- and d-orbital electrons in a valence fluctuating compound EuNi2P2

The interaction between localized f and itinerant conduction electrons is crucial in the electronic properties of heavy fermion and valence fluctuating compounds. Using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structure of the archetypical valence fluctuating compound EuNi2P2 that hosts multiple f electrons. At low temperatures, we reveal the hybridization between Eu 4f and Ni 3d states, which contributes to the electron mass enhancement, consistent with the periodic Anderson model. With increasing temperature, interestingly, we observe opposite temperature evolution of electron spectral function above and below the Kondo coherence temperature near 110 K, which is in contrast to the monotonic valence change and beyond the expectation of the periodic Anderson model. We argue that both f-d hybridization and correlation are imperative in the electronic properties of EuNi2P2. Our results shed light on the understanding of novel properties, such as heavy fermion behaviors and valence fluctuation, of rare-earth transition-metal intermetallic compounds with multiple f electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of non-trivial topological electronic structure of orthorhombic SnSe

Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.

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preprint2020arXiv

Spectroscopic Signature for Local-moment Magnetism in van der Waals Ferromagnet Fe$_3$GeTe$_2$

The van der Waals ferromagnet Fe$_3$GeTe$_2$ has recently attracted extensive research attention due to its intertwined magnetic, electronic and topological properties. Here, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the temperature evolution of the electronic structure of bulk Fe$_3$GeTe$_2$. We observe largely dispersive energy bands that are narrowed by a factor of 1.6 compared with ab-initio calculation. Upon heating towards the ferromagnetic transition near 225 K, we observe a massive reduction of quasiparticle coherence in a large energy range, which is attributed to the enhanced magnetic fluctuation in the system. Remarkably, the electron bands barely shift with increasing temperature, which deviates from the exchange splitting picture within the itinerant Stoner model. We argue that the local magnetic moments play a crucial role in the ferromagnetism of Fe$_3$GeTe$_2$, despite its strongly itinerant nature. Our results provide important insights into the electronic and magnetic properties of Fe$_3$GeTe$_2$ and shed light on the generic understanding of itinerant magnetism in correlated materials.

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preprint2019arXiv

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states show little temperature dependence and remain gapless across the AFM transition. The detailed electronic structure of MnBi4Te7 and its temperature evolution, together with the results of its sister compound MnBi2Te4, will not only help understand the exotic properties of this family of magnetic TQMs, but also guide the design for possible applications.

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