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Y. Ando

Y. Ando contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2020arXiv

Detection of Ferromagnetic Resonance from 1 nm-thick Co

To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic films.

preprint2020arXiv

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

preprint2020arXiv

Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film

The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilayer film. Considering the absence of spin conversion in Bi/yttrium-iron-garnet bilayers and the enhancement of spin conversion in Bi-doped Cu, the present results indicate the importance of material combinations to generate substantial spin-conversion effects in Bi.

preprint2019arXiv

Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.

preprint2010arXiv

Characteristic electronic structure and its doping evolution in lightly-doped to underdoped YBa2Cu3Oy

We have performed an angle resolved photoemission spectroscopy (ARPES) study of lightly-doped to underdoped YBa2Cu3Oy (YBCO) untwinned single crystals and a core-level x-ray photoemission spectroscopy (XPS) study of YBCO single and polycrystals. In the zone diagonal (nodal) direction, dispersive quasi-particle (QP) features crossing the Fermi level were observed down to the hole concentration of ~ 4%, which explains the metallic transport of the lightly-doped YBCO. The chemical potential shift estimated from XPS was more rapid than in the Bi2212 cuprates. Upon hole doping, very rapid spectral weight transfer from high binding energies to the QP feature, even faster than La2-xSrxCuO4, was observed.

preprint2010arXiv

Polarization-analyzed resonant inelastic x-ray scattering of the orbital excitations in KCuF3

We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of orbital excitations in KCuF3 . By performing the polarization analysis of the scattered photons, we disclose that the excitation between the eg orbitals and the excitations from t2g to eg exhibit distinct polarization dependence. The polarization dependence of the respective excitations is interpreted based on a phenomenological consideration of the symmetry of the RIXS process that yields a necessary condition for observing the excitations. In addition, we show that the orbital excitations are dispersionless within our experimental resolution.

preprint2010arXiv

Unravelling the glue and the competing order in superconducting cuprates

We present Raman scattering experiments in ${\rm La_{2-x}Sr_xCuO_4}$ single crystals at various doping levels x and compare the results with theoretical predictions obtained assuming an interaction mediated by spin and charge fluctuations. The light-scattering selection rules allow us to disentangle their respective contributions. We find that the glue spectral function is spin-dominated at low doping while the contribution of charge fluctuations becomes dominant around optimal doping. This indicates that the fluctuations of a nearly ordered state with coexisting spin and charge order support the superconducting pairing.

preprint2007arXiv

Spin-glass state of vortices in YBa2Cu3Oy and La2-xSrxCuO4 below the metal-to-insulator crossover

Highly disordered magnetism confined to individual weakly interacting vortices is detected by muon spin rotation in two different families of high-transition-temperature superconductors, but only in samples on the low-doping side of the low-temperature normal state metal-to-insulator crossover (MIC). The results support an extended quantum phase transition (QPT) theory of competing magnetic and superconducting orders that incorporates the coupling between CuO2 planes. Contrary to what has been inferred from previous experiments, the static magnetism that coexists with superconductivity near the field-induced QPT is not ordered. Our findings unravel the mystery of the MIC and establish that the normal state of high-temperature superconductors is ubiquitously governed by a magnetic quantum critical point in the superconducting phase.