BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Y. Ando

Y. Ando appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.str-elphysics.app-phcond-mat.otherphysics.opticsquant-ph

Catalog footprint

What is connected

26works
8topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

26 published item(s)

preprint2020arXiv

Detection of Ferromagnetic Resonance from 1 nm-thick Co

To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic films.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film

The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilayer film. Considering the absence of spin conversion in Bi/yttrium-iron-garnet bilayers and the enhancement of spin conversion in Bi-doped Cu, the present results indicate the importance of material combinations to generate substantial spin-conversion effects in Bi.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene

The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in a single-layer graphene. From the gate dependence of the electromotive force we showed dominance of the intrinsic over Rashba spin-orbit interaction: a long-standing question in graphene research.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantification of a propagating spin-wave-packet created by an ultrashort laser pulse in a thin film of magnetic metal

Coherent spin-wave generation by focused ultrashort laser pulse irradiation was investigated for a permalloy thin film at micrometer scale using an all-optical space and time-resolved magneto-optical Kerr effect. The spin-wave packet propagating perpendicular to magnetization direction was clearly observed, however that propagating parallel to the magnetization direction was not observed. The propagation length, group velocity, center frequency, and packet-width of the observed spin-wave packet were evaluated and quantitatively explained in terms of the propagation of a magneto-static spin-wave driven by ultrafast change of an out-of-plane demagnetization field induced by the focused-pulse laser.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Precise determination of two-carrier transport properties in the topological insulator TlBiSe$_2$

We report the electric transport study of the three-dimensional topological insulator TlBiSe$_2$. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda $et~al.$, Phys. Rev. Lett. $\bm{105}$, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Gr{ü}neisen formula and yielded the Debye temperature $\varTheta_{\rm{D}}=113 \pm 14$~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-Rotation Symmetry Breaking in the Superconducting State of CuxBi2Se3

Spontaneous symmetry breaking is an important concept for understanding physics ranging from the elementary particles to states of matter. For example, the superconducting state breaks global gauge symmetry, and unconventional superconductors can break additional symmetries. In particular, spin rotational symmetry is expected to be broken in spin-triplet superconductors. However, experimental evidence for such symmetry breaking has not been conclusively obtained so far in any candidate compounds. Here, by 77Se nuclear magnetic resonance measurements, we show that spin rotation symmetry is spontaneously broken in the hexagonal plane of the electron-doped topological insulator Cu0.3Bi2Se3 below the superconducting transition temperature Tc=3.4 K. Our results not only establish spin-triplet superconductivity in this compound, but may also serve to lay a foundation for the research of topological superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

On infrared pseudogap in cuprate and pnictide high-temperature superconductors

We investigate infrared manifestations of the pseudogap in the prototypical cuprate and pnictide superconductors: YBa2Cu3Oy and BaFe2As2 (Ba122) systems. We find remarkable similarities between the spectroscopic features attributable to the pseudogap in these two classes of superconductors. The hallmarks of the pseudogap state in both systems include a weak absorption feature at about 500 cm-1 followed by a featureless continuum between 500 and 1500 cm-1 in the conductivity data and a significant suppression in the scattering rate below 700 - 900 cm-1. The latter result allows us to identify the energy scale associated with the pseudogap $Δ_{PG}$. We find that in the Ba122-based materials the superconductivity-induced changes of the infrared spectra occur in the frequency region below 100 - 200 cm-1, which is much lower than the energy scale of the pseudogap. We performed theoretical analysis of the scattering rate data of the two compounds using the same model which accounts for the effects of the pseudogap and electron-boson coupling. We find that the scattering rate suppression in Ba122-based compounds below $Δ_{PG}$ is solely due to the pseudogap formation whereas the impact of the electron-boson coupling effects is limited to lower frequencies. The magnetic resonance modes used as inputs in our modeling are found to evolve with the development of the pseudogap, suggesting an intimate correlation between the pseudogap and magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

Spincurrentronics, which involves the generation, propagation and control of spin currents, has attracted a great deal of attention because of the possibility of realizing dissipation-free information propagation. Whereas electrical generation of spin currents originally made the field of spincurrentronics possible, and significant advances in spin-current devices has been made, novel spin-current-generation approaches such as dynamical methods have also been vigorously investigated. However, the low spin-current generation efficiency associated with dynamical methods has impeded further progress towards practical spin devices. Here we show that by introducing a Heusler-type ferromagnetic material, Fe3Si, pure spin currents can be generated about twenty times more efficiently using a dynamical method. This achievement paves the way to the development of novel spin-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces

We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nonlinear emission of spin-wave caustics from an edge mode of a micro-structured Co2Mn0.6Fe0.4Si waveguide

Magnetic Heusler materials with very low Gilbert damping are expected to show novel magnonic transport phenomena. We report nonlinear generation of higher harmonics leading to the emission of caustic spin-wave beams in a low-damping, micro-structured Co2Mn0.6Fe0.4Si Heusler waveguide. The source for the higher harmonic generation is a localized edge mode formed by the strongly inhomogeneous field distribution at the edges of the spin-wave waveguide. The radiation characteristics of the propagating caustic waves observed at twice and three times the excitation frequency are described by an analytical calculation based on the anisotropic dispersion of spin waves in a magnetic thin film.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric-field control of spin accumulation signals in silicon at room temperature

We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Characteristic electronic structure and its doping evolution in lightly-doped to underdoped YBa2Cu3Oy

We have performed an angle resolved photoemission spectroscopy (ARPES) study of lightly-doped to underdoped YBa2Cu3Oy (YBCO) untwinned single crystals and a core-level x-ray photoemission spectroscopy (XPS) study of YBCO single and polycrystals. In the zone diagonal (nodal) direction, dispersive quasi-particle (QP) features crossing the Fermi level were observed down to the hole concentration of ~ 4%, which explains the metallic transport of the lightly-doped YBCO. The chemical potential shift estimated from XPS was more rapid than in the Bi2212 cuprates. Upon hole doping, very rapid spectral weight transfer from high binding energies to the QP feature, even faster than La2-xSrxCuO4, was observed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Doping dependence of the $(π,π)$ shadow band in La-based cuprates studied by angle-resolved photoemission spectroscopy

The $(π,π)$ shadow band (SB) in La-based cuprate family (La214) was studied by angle-resolved photoemission spectroscopy (ARPES) over a wide doping range from $x=0.01$ to $x=0.25$. Unlike the well-studied case of the Bi-based cuprate family, an overall strong, monotonic doping dependence of the SB intensity at the Fermi level ($E_F$) was observed. In contrast to a previous report for the presence of the SB only close to $x=1/8$, we found it exists in a wide doping range, associated with a doping-independent $(π,π)$ wave vector but strongly doping-dependent intensity: It is the strongest at $x\sim 0.03$ and systematically diminishes as the doping increases until it becomes negligible in the overdoped regime. This SB with the observed doping dependence of intensity can in principle be caused by the antiferromagnetic fluctuations or a particular form of low-temperature orthorhombic lattice distortion known to persist up to $x\sim 0.21$ in the system, with both being weakened with increasing doping. However, a detailed binding energy dependent analysis of the SB at $x=0.07$ does not appear to support the former interpretation, leaving the latter as a more plausible candidate, despite a challenge in quantitatively linking the doping dependences of the SB intensity and the magnitude of the lattice distortion. Our finding highlights the necessity of a careful and global consideration of the inherent structural complications for correctly understanding the cuprate Fermiology and its microscopic implication.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Polarization-analyzed resonant inelastic x-ray scattering of the orbital excitations in KCuF3

We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of orbital excitations in KCuF3 . By performing the polarization analysis of the scattered photons, we disclose that the excitation between the eg orbitals and the excitations from t2g to eg exhibit distinct polarization dependence. The polarization dependence of the respective excitations is interpreted based on a phenomenological consideration of the symmetry of the RIXS process that yields a necessary condition for observing the excitations. In addition, we show that the orbital excitations are dispersionless within our experimental resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Unravelling the glue and the competing order in superconducting cuprates

We present Raman scattering experiments in ${\rm La_{2-x}Sr_xCuO_4}$ single crystals at various doping levels x and compare the results with theoretical predictions obtained assuming an interaction mediated by spin and charge fluctuations. The light-scattering selection rules allow us to disentangle their respective contributions. We find that the glue spectral function is spin-dominated at low doping while the contribution of charge fluctuations becomes dominant around optimal doping. This indicates that the fluctuations of a nearly ordered state with coexisting spin and charge order support the superconducting pairing.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Improvement of structural, electronic, and magnetic properties of Co$_2$MnSi thin films by He$^+$-irradiation

The influence of 30 keV He$^+$ ion irradiation on structural, electronic and magnetic properties of Co$_2$MnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered Co$_2$MnSi Heusler compound with L2$_1$ structure.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spin-glass state of vortices in YBa2Cu3Oy and La2-xSrxCuO4 below the metal-to-insulator crossover

Highly disordered magnetism confined to individual weakly interacting vortices is detected by muon spin rotation in two different families of high-transition-temperature superconductors, but only in samples on the low-doping side of the low-temperature normal state metal-to-insulator crossover (MIC). The results support an extended quantum phase transition (QPT) theory of competing magnetic and superconducting orders that incorporates the coupling between CuO2 planes. Contrary to what has been inferred from previous experiments, the static magnetism that coexists with superconductivity near the field-induced QPT is not ordered. Our findings unravel the mystery of the MIC and establish that the normal state of high-temperature superconductors is ubiquitously governed by a magnetic quantum critical point in the superconducting phase.

0 citations0 reviewsNo code linkedOpen access