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K. Hamaya

K. Hamaya appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

20 published item(s)

preprint2016arXiv

Direct Evidence for Suppression of the Kondo Effect due to Pure Spin Current

We study the effect of a pure spin current on the Kondo singlet in a diluted magnetic alloy using non-local lateral spin valve structures with highly spin polarized Co2FeSi electrodes. Temperature dependence of the non-local spin signals shows a sharp reduction with decreasing temperature, followed by a plateau corresponding to the low temperature Fermi liquid regime below the Kondo temperature (TK). The spin diffusion length of the Kondo alloy is found to increase with the evolution of spin accumulation. The results are in agreement with the intuitive description that the Kondo singlet cannot survive any more in sufficiently large spin accumulation even below TK.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films

Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature grown Heusler-compound films, the Co-Fe atomic substitution at A and C sites can be confirmed by the conversion electron M"ossbauer spectroscopy measurements. As a result, the magnetic moment and room-temperature spin polarization estimated by nonlocal spin-valve measurements are systematically changed with the Co-Fe substitutions. This study experimentally verified that the Co-Fe substitution in Co_3-xFe_xSi Heusler compounds can directly affect the room-temperature spin polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

Spincurrentronics, which involves the generation, propagation and control of spin currents, has attracted a great deal of attention because of the possibility of realizing dissipation-free information propagation. Whereas electrical generation of spin currents originally made the field of spincurrentronics possible, and significant advances in spin-current devices has been made, novel spin-current-generation approaches such as dynamical methods have also been vigorously investigated. However, the low spin-current generation efficiency associated with dynamical methods has impeded further progress towards practical spin devices. Here we show that by introducing a Heusler-type ferromagnetic material, Fe3Si, pure spin currents can be generated about twenty times more efficiently using a dynamical method. This achievement paves the way to the development of novel spin-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes

We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than that for a device with Fe/MgO tunnel-barrier contacts reported previously. Taking the spin related behavior with temperature evolution into account, we infer that it is necessary to simultaneously demonstrate the high spin generation efficiency and improve the quality of the transport channel for achieving Ge based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide

We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-terminated one causes the three-dimensional epitaxial growth of Ge films. The high-quality Ge grown on the Si-terminated surface has almost no strain, meaning that the Ge films are not grown on the low-temperature-grown Si buffer layer but on the lattice matched metallic Fe3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co$_{2}$FeSi and Fe$_{3}$Si

We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analysis based on the one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing the resistivity, which depends on the structural ordering, for both CFS and FS electrodes, and verify that CFS has relatively large spin polarization compared with FS.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces

We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric-field control of spin accumulation signals in silicon at room temperature

We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Room-temperature generation of giant pure spin currents using Co$_2$FeSi spin injectors

Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power consumptions. Conventional ferromagnetic electrodes such as Co and NiFe have so far been utilized as a spin injector for generating the pure spin currents in nonmagnetic channels. However, the generation efficiency of the pure spin currents is extremely low at room temperature, giving rise to a serious obstacle for device applications. Here, we demonstrate the generation of giant pure spin currents at room temperature in lateral spin valve devices with a highly ordered Heusler-compound Co$_2$FeSi spin injector. The generation efficiency of the pure spin currents for the Co$_2$FeSi spin injectors reaches approximately one hundred times as large as that for NiFe ones, indicating that Heusler-compound spin injectors enable us to materialize a high-performance lateral spin device. The present study is a technological jump in spintronics and indicates the great potential of ferromagnetic Heusler compounds with half metallicity for generating pure spin currents.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature

We study the effect of the shape anisotropy on the magnetic domain configurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxial wire as a function of temperature. Using magnetoresistance measurements, we deduce the magnetic configurations and estimate the relative strength of the shape anisotropy compared with the intrinsic anisotropies. Since the intrinsic anisotropy is found to show a stronger temperature dependence than the shape anisotropy, the effect of the shape anisotropy on the magnetic domain configuration is relatively enhanced with increasing temperature. This information about the shape anisotropy provides a practical means of designing nanostructured spin electronic devices using (Ga,Mn)As.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations

We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of <100> cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.

0 citations0 reviewsNo code linkedOpen access