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Researcher profile

Xing-Qiu Chen

Xing-Qiu Chen contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

8 published item(s)

preprint2022arXiv

Two-dimensional Obstructed Atomic Insulators with Fractional Corner Charge in MA$_2$Z$_4$ Family

According to topological quantum chemistry, a class of electronic materials have been called obstructed atomic insulators (OAIs), in which a portion of valence electrons necessarily have their centers located on some empty $\textit{Wyckoff}$ positions without atoms occupation in the lattice. The obstruction of centering these electrons coinciding with their host atoms is nontrivial and results in metallic boundary states when the boundary is properly cut. Here, on basis of first-principles calculations in combination with topological quantum chemistry analysis, we propose two dimensional MA$_2$Z$_4$ (M = Cr, Mo and W; A = Si and Ge, Z = N, P and As) monolayer family are all OAIs. A typical case is the recently synthesized MoSi$_2$N$_4$. Although it is a topological trivial insulator with the occupied electronic states being integer combination of elementary band representations, it has valence electrons centering empty $\textit{Wyckoff}$ positions. It exhibits unique OAI-induced metallic edge states along the (1$\bar{1}$0) edge of MoSi$_2$N$_4$ monolayer and the in-gap corner states at three vertices of certain hexagonal nanodisk samples respecting C$_3$ rotation symmetry. The readily synthesized MoSi$_2$N$_4$ is quite stable and has a large bulk band gap of 1.94 eV, which makes the identification of these edge and corner states most possible for experimental clarification.

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preprint2021arXiv

Novel Two-Dimensional Layered MSi$_2$N$_4$ (M = Mo, W): New Promising Thermal Management Materials

With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical flexibility, and precisely controlled growth, two-dimensional (2D) materials are widely accepted as ideal candidates for thermal management materials. In this work, by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations, we comprehensively investigated the thermal conductivity of novel 2D layered MSi$_2$N$_4$ (M = Mo, W). Our results point to competitive thermal conductivities (162 W/mK) of monolayer MoSi$_2$N$_4$, which is around two times larger than that of WSi$_2$N$_4$ and seven times larger than that of silicene despite their similar non-planar structures. It is revealed that the high thermal conductivity arises mainly from its large group velocity and low anharmonicity. Our result suggests that MoSi$_2$N$_4$ could be a potential candidate for 2D thermal management materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

The realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as combination of piezoelectricity with topological insulating phase or ferromagnetism. In this work, a Janus monolayer $\mathrm{SrAlGaSe_4}$ is built from 2D $\mathrm{MA_2Z_4}$ family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to lacking inversion symmetry. The unstrained $\mathrm{SrAlGaSe_4}$ monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by the biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and nontrivial band topology can hold until considered 1.16 tensile strain. Moreover, a Rashba spin splitting in the conduction bands can exit in PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer $\mathrm{SrAlGaSe_4}$, both in-plane and much weak out-of-plane piezoelectric polarizations can be induced with a uniaxial strain applied. The calculated piezoelectric strain coefficients $d_{11}$ and $d_{31}$ of monolayer $\mathrm{SrAlGaSe_4}$ are -1.865 pm/V and -0.068 pm/V at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from 2D $\mathrm{MA_2Z_4}$ family. To confirm that, similar to $\mathrm{SrAlGaSe_4}$, the coexistence of piezoelectricity and topological orders can be realized by strain (about 1.04 tensile strain) in the $\mathrm{CaAlGaSe_4}$ monolayer. Our works suggest that Janus monolayer $\mathrm{SrAlGaSe_4}$ is a pure 2D system for PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological orders, which can lead to novel applications in electronics and spintronics.

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preprint2020arXiv

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer $\mathrm{VSi_2P_4}$

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic properties of $\mathrm{VSi_2P_4}$, and it spans a wide range of properties upon the increasing strain from ferromagnetic metal (FMM) to SGS to ferromagnetic semiconductor (FMS) to SGS to ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS $\mathrm{VSi_2P_4}$ with strain range of 0\% to 4\%. The calculated piezoelectric strain coefficients $d_{11}$ for 1\%, 2\% and 3\% strains are 4.61 pm/V, 4.94 pm/V and 5.27 pm/V, respectively, which are greater than or close to a typical value of 5 pm/V for bulk piezoelectric materials. Finally, similar to $\mathrm{VSi_2P_4}$, the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the $\mathrm{VSi_2N_4}$ monolayer. Our works show that $\mathrm{VSi_2P_4}$ in FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Computation and data driven discovery of topological phononic materials

The discovery of topological quantum states marks a new chapter in both condensed matter physics and materials sciences. By analogy to spin electronic system, topological concepts have been extended into phonons, boosting the birth of topological phononics (TPs). Here, we present a high-throughput screening and data-driven approach to compute and evaluate TPs among over 10,000 materials. We have clarified 5014 TP materials and classified them into single Weyl, high degenerate Weyl, and nodal-line (ring) TPs. Among them, three representative cases of TPs have been discussed in detail. Furthermore, we suggest 322 TP materials with potential clean nontrivial surface states, which are favorable for experimental characterizations. This work significantly increases the current library of TP materials, which enables an in-depth investigation of their structure-property relations and opens new avenues for future device design related to TPs.

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preprint2020arXiv

Structure-driven intercalated architecture of septuple-atomic-layer $MA_2Z_4$ family with diverse properties from semiconductor to topological insulator to Ising superconductor

Motivated by the fact that septuple-atomic-layer MnBi$_2$Te$_4$ can be structurally viewed as the combination of double-atomic-layer MnTe intercalating into quintuple-atomic-layer Bi$_2$Te$_3$, we present a general approach of constructing twelve septuple-atomic-layer $α_i$- and $β_i$-$MA_2Z_4$ monolayer family (\emph{i} = 1 to 6) by intercalating MoS$_2$-type $MZ$$_2$ monolayer into InSe-type A$_2$Z$_2$ monolayer. Besides reproducing the experimentally synthesized $α_1$-MoSi$_2$N$_4$, $α_1$-WSi$_2$N$_4$ and $β_5$-MnBi$_2$Te$_4$ monolayer materials, another 66 thermodynamically and dynamically stable $MA_2Z_4$ were predicted, which span a wide range of properties upon the number of valence electrons (VEC). $MA_2Z_4$ with the rules of 32 or 34 VEC are mostly semiconductors with direct or indirect band gap and, however, with 33 VEC are generally metal, half-metal ferromagnetism, or spin-gapless semiconductor upon whether or not an unpaired electron is spin polarized. Moreover, we propose $α_2$-WSi$_2$P$_4$ for the spin-valley polarization, $α_1$-TaSi$_2$N$_4$ for Ising superconductor and $β_2$-SrGa$_2$Se$_4$ for topological insulator.

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preprint2019arXiv

Two-dimensional topological semimetal states in monolayers Cu$_2$Ge, Fe$_2$Ge, and Fe$_2$Sn

Recent experimental realizations of the topological semimetal states in several monolayer systems are very attractive because of their exotic quantum phenomena and technological applications. Based on first-principles density-functional theory calculations including spin-orbit coupling, we here explore the drastically different two-dimensional (2D) topological semimetal states in three monolayers Cu$_2$Ge, Fe$_2$Ge, and Fe$_2$Sn, which are isostructural with a combination of the honeycomb Cu or Fe lattice and the triangular Ge or Sn lattice. We find that (i) the nonmagnetic (NM) Cu$_{2}$Ge monolayer having a planar geometry exhibits the massive Dirac nodal lines, (ii) the ferromagentic (FM) Fe$_2$Ge monolayer having a buckled geometry exhibits the massive Weyl points, and (iii) the FM Fe$_2$Sn monolayer having a planar geometry and an out-of-plane magnetic easy axis exhibits the massless Weyl nodal lines. It is therefore revealed that mirror symmetry cannot protect the four-fold degenerate Dirac nodal lines in the NM Cu$_{2}$Ge monolayer, but preserves the doubly degenerate Weyl nodal lines in the FM Fe$_{2}$Sn monolayer. Our findings demonstrate that the interplay of crystal symmetry, magnetic easy axis, and band topology is of importance for tailoring various 2D topological states in Cu$_2$Ge, Fe$_2$Ge, and Fe$_2$Sn monlayers.

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preprint2018arXiv

Phononic Weyl Nodal Straight Lines in High-Temperature Superconductor MgB$_2$

Based on first-principles calculations, we predict that the superconducting MgB$_2$ with a AlB$_2$-type centrosymmetric lattice host the so-called phononic topological Weyl nodal lines (PTWNLs) on its bulk phonon spectrum. These PTWNLs can be viewed as countless Weyl points (WPs) closely aligned along the straight lines in the $-$H-K-H direction within the three-dimensional Brillouin zone (BZ). Their topological non-trivial natures are confirmed by the calculated Berry curvature distributions on the planes perpendicular to these lines. These lines are highly unique, because they exactly locate at the high-symmetry boundary of the BZ protected by the mirror symmetry and, simultaneously, straightly transverse the whole BZ, in different from known classifications including nodal rings, nodal chains or nets, and nodal loops. On the (10$\bar{1}$0) crystal surface, the PTWNLs-induced drumhead-like non-trivial surface states appear within the rectangular area confined by the projected lines of the PTWNLs with opposite chirality. Moreover, when the mirror symmetry is broken, the double-degenerate PTWNLs are further lifted to form a pair WPs with opposite chirality. Our results pave the ways for future experimental study on topological phonons on MgB$_2$ and highlights similar results in a series of isostructural AlB$_2$-type metallic diborides.

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