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A Unified Mechanism for Hydrogen Trapping at Metal Vacancies

Interaction between hydrogen (H) and metals is central to many materials problems of scientific and technological importance. Chief among them is the development of H storage and H-resistant materials. H segregation or trapping at lattice defects, including vacancies, dislocations, grain boundaries, etc, plays a crucial role in determining the properties of these materials. Here, through first-principles simulations, we propose a unified mechanism involving charge transfer induced strain destabilization to understand H segregation behavior at vacancies. We discover that H prefers to occupy interstitials with high pre-existing charge densities and the availability of such interstitials sets the limit on H trapping capacity at a vacancy. Once the maximum H capacity is reached, the dominant charge donors switch from the nearest-neighbor (NN) to the next-nearest-neighbor (NNN) metal atoms. Accompanying with this long-range charge transfer, a significant reorganization energy would occur, leading to instability of the H-vacancy complex. The physical picture unveiled here appears universal across the BCC series and is believed to be relevant to other metals/defects as well. The insight gained from this study is expected to have important implications for the design of H storage and H-resistant materials.