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Xiaolei Liu

Xiaolei Liu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Poincaré Heterogeneous Graph Neural Networks for Sequential Recommendation

Sequential recommendation (SR) learns users' preferences by capturing the sequential patterns from users' behaviors evolution. As discussed in many works, user-item interactions of SR generally present the intrinsic power-law distribution, which can be ascended to hierarchy-like structures. Previous methods usually handle such hierarchical information by making user-item sectionalization empirically under Euclidean space, which may cause distortion of user-item representation in real online scenarios. In this paper, we propose a Poincaré-based heterogeneous graph neural network named PHGR to model the sequential pattern information as well as hierarchical information contained in the data of SR scenarios simultaneously. Specifically, for the purpose of explicitly capturing the hierarchical information, we first construct a weighted user-item heterogeneous graph by aliening all the user-item interactions to improve the perception domain of each user from a global view. Then the output of the global representation would be used to complement the local directed item-item homogeneous graph convolution. By defining a novel hyperbolic inner product operator, the global and local graph representation learning are directly conducted in Poincaré ball instead of commonly used projection operation between Poincaré ball and Euclidean space, which could alleviate the cumulative error issue of general bidirectional translation process. Moreover, for the purpose of explicitly capturing the sequential dependency information, we design two types of temporal attention operations under Poincaré ball space. Empirical evaluations on datasets from the public and financial industry show that PHGR outperforms several comparison methods.

preprint2021arXiv

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

preprint2020arXiv

High-Pressure Crystal Growth, Superconducting Properties, and Electronic Band Structure of Nb2P5

Orthorhombic (space group: Pnma) Nb2P5 is a high-pressure phase that is quenchable to ambient pressure, which could viewed as the zigzag infinite P chain-inserted NbP2. We report herein the high-pressure crystal growth of Nb2P5 and the discovery of its superconducting transition at Tc ~ 2.6 K. The electrical resistivity, magnetization, and specific heat capacity measurements on the high-quality crystal unveiled a conventional type-II weakly coupled s-wave nature of the superconductivity, with the upper critical field Hc2(0) ~ 0.5 T, the electron-phonon coupling strength λep ~ 0.5 - 0.8, and the Ginzburg-Landau parameter \k{appa} ~ 100. The ab initio calculations on the electronic band structure unveiled nodal-line structures protected by different symmetries. The one caused by band inversion, for example, on the Γ-X and U-R paths of the Brillouin zone, likely could bring nontrivial topology and hence possible nontrivial surface state on the surface. The surface states on the (100), (010) and (110) surfaces were also calculated and discussed. The discovery of the phosphorus-rich Nb2P5 superconductor would be instructive for the design of more metal phosphides superconductors which might host unconventional superconductivity or potential technical applications.

preprint2020arXiv

The de Hass-van Alphen quantum oscillations in BaSn3 superconductor with multiple Dirac fermions

By measuring the de Hass-van Alphen effect and calculating the electronic band structure, we have investigated the bulk Fermi surface of the BaSn3 superconductor with a transition temperature of ~ 4.4 K. Striking de Haas-van Alphen (dHvA) quantum oscillations are observed when the magnetic field B is perpendicular to both (100) and (001) planes. Our analysis unveiled nontrivial Berry phase imposed in the quantum oscillations when B is perpendicular to (100), with two fundamental frequencies at 31.5 T and 306.7 T, which likely arise from two corresponding hole pockets of the bands forming a type-II Dirac point. The results are supported by the ab initio calculations indicating a type-II Dirac point setting and tilting along the high symmetric K-H line of the Brillouin zone, about 0.13 eV above the Fermi level. Moreover, the calculations also revealed other two type-I Dirac points on the high symmetric Γ-A direction, but slightly far below the Fermi level. The results demonstrate BaSn3 as an excellent platform for the study of not only exotic properties of different types of Dirac fermions in a single material, but also the interplay between nontrivial topological states and superconductivity.