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Researcher profile

Yanfeng Guo

Yanfeng Guo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallphysics.optics

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Published work

21 published item(s)

preprint2026arXiv

Evolution from three-dimensional charge density wave to one-dimensional stripe order in CsV$_{3-x}$Ti$_x$Sb$_5$

Understanding intertwined phases near quantum criticality is a central challenge in correlated electron systems. The kagome metal CsV$_{3-x}$Ti$_x$Sb$_5$ provides a fertile platform to investigate the interplay between charge-density-wave (CDW) and superconductivity. Here, combining x-ray diffraction (XRD) and scanning tunneling microscopy (STM), we uncover a dimensional evolution of the CDW upon Ti substitution. We find that even infinitesimal Ti doping (x = 0.009) completely suppresses the three-dimensional 2 $\times$ 2 $\times$ 4 CDW present in pristine CsV3Sb5, while reducing the remaining 2 $\times$ 2 $\times$ 2 CDW to a quasi-two-dimensional order. With further Ti substitution, although no CDW transition is discernible in resistivity measurements, our XRD and STM data reveal the emergence of a (quasi-)one-dimensional CDW with a short correlation length of $\sim$ 20 $Å$ at x = 0.2. The stripelike CDW undergoes a continuous second-order phase transition, characterized by a gradual increase in intensity and correlation length below $\sim$ 56 K. Our results elucidate the dimensional evolution of CDW order in CsV$_{3-x}$Ti$_x$Sb$_5$ and provide new insight into understanding the unconventional CDWs and their role in kagome superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4

Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phosphorus is a prominent example. However, it suffers from poor ambient stability. Here, we report the strain-tunable anisotropic infrared response of a layered material Nb2SiTe4, whose lattice structure is similar to the 2H-phase transition metal dichalcogenides (TMDCs) with three different kinds of building units. Strikingly, some of the strain-tunable optical transitions are crystallographic axis-dependent, even showing opposite shift when uniaxial strain is applied along two in-plane principal axes. Moreover, G0W0-BSE calculations show good agreement with the anisotropic extinction spectra. The optical selection rules are obtained via group theory analysis, and the strain induced unusual shift trends are well explained by the orbital coupling analysis. Our comprehensive study suggests that Nb2SiTe4 is a good candidate for tunable polarization-sensitive optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification

The topological electronic structure plays a central role in the non-trivial physical properties in topological quantum materials. A minimal, hydrogen-atom-like topological electronic structure is desired for researches. In this work, we demonstrate an effort towards the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a trivial Rashba-type surface state (RSS), which could be efficiently removed by the in situ surface potassium (K) dosing. By employing multiple experimental methods to characterize K dosed surface, we attribute such a modification to the electrochemical reactions of K clusters on the surface. Our work not only gives a clear band assignment in MnBi2Te4, but also provides possible new routes in accentuating the topological behavior in the magnetic topological quantum materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb2SiTe4. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb2SiTe4 to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nontrivial topological states in BaSn5 superconductor probed by de Haas-van Alphen quantum oscillations

We report herein the nontrivial topological states in an intrinsic type-II superconductor BaSn5 (Tc ~ 4.4 K) probed via measuring the magnetizations, specific heat, de Haas-van Alphen (dHvA) effect and performing first principles calculations. The first principles calculations reveal a topological nodal ring structure centering at the H point in the kz = π plane of the Brillouin zone (BZ), which could be gapped by spin-orbit coupling (SOC), yielding rather small gaps below and above the Fermi level about 0.04 eV and 0.14 eV, respectively. The SOC also results in a pair of Dirac points along the Γ-A direction and located ~ 0.2 eV above the Fermi level. The analysis of the dHvA quantum oscillations supports the calculations by revealing nontrivial Berry phase originated from three hole and one electron pockets related to the bands forming the Dirac cones. Our study thus provides an excellent avenue for investigating the interplay between superconductivity and nontrivial topological states.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of Dimension-Crossover of a Tunable 1D Dirac Fermion in Topological Semimetal NbSi$_x$Te$_2$

Condensed matter systems in low dimensions exhibit emergent physics that does not exist in three dimensions. When electrons are confined to one dimension (1D), some significant electronic states appear, such as charge density wave, spin-charge separations and Su-Schrieffer-Heeger (SSH) topological state. However, a clear understanding of how the 1D electronic properties connects with topology is currently lacking. Here we systematically investigated the characteristic 1D Dirac fermion electronic structure originated from the metallic NbTe$_2$ chains on the surface of the composition-tunable layered compound NbSi$_x$Te$_2$ ($x$ = 0.40 and 0.43) using angle-resolved photoemission spectroscopy. We found the Dirac fermion forms a Dirac nodal line structure protected by the combined $\widetilde{\mathcal{M}}{\rm_y}$ and time-reversal symmetry T and proves the NbSi$_x$Te$_2$ system as a topological semimetal, in consistent with the ab-initio calculations. As $x$ decreases, the interaction between adjacent NbTe2 chains increases and Dirac fermion goes through a dimension-crossover from 1D to 2D, as evidenced by the variation of its Fermi surface and Fermi velocity across the Brillouin zone in consistence with a Dirac SSH model. Our findings demonstrate a tunable 1D Dirac electron system, which offers a versatile platform for the exploration of intriguing 1D physics and device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Persistent exchange splitting in a chiral helimagnet Cr1/3NbS2

Using high-resolution angle-resolved photoemission spectroscopy (ARPES) and ab-initio calculation, we systematically investigate the electronic structure of the chiral helimagnet Cr1/3NbS2 and its temperature evolution. The comparison with NbS2 suggests that the electronic structure of Cr1/3NbS2 is strongly modified by the intercalation of Cr atoms. Our ab-initio calculation, consistent with experimental result, suggests strong hybridization between Nb- and Cr-derived states near the Fermi level. In the chiral helimagnetic state (below the Curie temperature Tc), we observe exchange splitting of the energy bands crossing EF, which follows the temperature evolution of the magnetic moment, suggesting an important role of the conduction electrons in the long-range magnetic ordering. Interestingly, the exchange splitting persists far above Tc with negligible temperature dependence, in drastic contrast to the itinerant ferromagnetism described by the Stoner model, indicating the existence of short-range magnetic order. Our results provide important insights into the microscopic mechanism of the chiral helimagnetic ordering in Cr1/3NbS2.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures, and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of a Si-containing topological Dirac semimetal CaAl2Si2

There has been an upsurge in the discovery of topological quantum materials, where various topological insulators and semimetals have been theoretically predicted and experimentally observed. However, only very few of them contains silicon, the most widely used element in electronic industry. Recently, ternary compound CaAl2Si2 has been predicted to be a topological Dirac semimetal, hosting Lorentz-symmetry-violating quasiparticles with a strongly tilted conical band dispersion. In this work, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we investigated the comprehensive electronic structure of CaAl2Si2. A pair of topological Dirac crossings is observed along the kz direction, in good agreement with the ab initio calculations, confirming the topological Dirac semimetal nature of the compound. Our study expands the topological material family on Si-containing compounds, which have great application potential in realizing low-cost, nontoxic electronic device with topological quantum states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Pressure Crystal Growth, Superconducting Properties, and Electronic Band Structure of Nb2P5

Orthorhombic (space group: Pnma) Nb2P5 is a high-pressure phase that is quenchable to ambient pressure, which could viewed as the zigzag infinite P chain-inserted NbP2. We report herein the high-pressure crystal growth of Nb2P5 and the discovery of its superconducting transition at Tc ~ 2.6 K. The electrical resistivity, magnetization, and specific heat capacity measurements on the high-quality crystal unveiled a conventional type-II weakly coupled s-wave nature of the superconductivity, with the upper critical field Hc2(0) ~ 0.5 T, the electron-phonon coupling strength λep ~ 0.5 - 0.8, and the Ginzburg-Landau parameter \k{appa} ~ 100. The ab initio calculations on the electronic band structure unveiled nodal-line structures protected by different symmetries. The one caused by band inversion, for example, on the Γ-X and U-R paths of the Brillouin zone, likely could bring nontrivial topology and hence possible nontrivial surface state on the surface. The surface states on the (100), (010) and (110) surfaces were also calculated and discussed. The discovery of the phosphorus-rich Nb2P5 superconductor would be instructive for the design of more metal phosphides superconductors which might host unconventional superconductivity or potential technical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic critical behavior of the van der Waals Fe5GeTe2 crystal with near room temperature ferromagnetism

The van der Waals ferromagnet Fe5GeTe2 has a Curie temperature TC of about 270 K, which can be raised above room temperature by tuning the Fe deficiency content. To achieve insights into its ferromagnetic exchange, we have studied the critical behavior by measuring the magnetization in bulk Fe5GeTe2 crystal around the ferromagnetic to paramagnetic phase transition. The analysis of the magnetization by employing various techniques including the modified Arrott plot, Kouvel-Fisher plot and critical isotherm analysis achieved a set of reliable critical exponents with TC = 273.7 K, beta = 0.3457, gamma = 1.40617, and delta = 5.021, suggesting a three-dimensional magnetic exchange with the distance decaying as J(r) ~ (r)$^-4.916, which is close to that of a three-dimensional Heisenberg model with long-range magnetic coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetically induced metal-insulator transition in Pb2CaOsO6

We report on the structural, magnetic, and electronic properties of two new double-perovskites synthesized under high pressure; Pb2CaOsO6 and Pb2ZnOsO6. Upon cooling below 80 K, Pb2CaOsO6 simultaneously undergoes a metal--insulator transition and develops antiferromagnetic order. Pb2ZnOsO6, on the other hand, remains a paramagnetic metal down to 2 K. The key difference between the two compounds lies in their crystal structure. The Os atoms in Pb2ZnOsO6 are arranged on an approximately face-centred cubic lattice with strong antiferromagnetic nearest-neighbor exchange couplings. The geometrical frustration inherent to this lattice prevents magnetic order from forming down to the lowest temperatures. In contrast, the unit cell of Pb2CaOsO6 is heavily distorted up to at least 500 K, including antiferroelectric-like displacements of the Pb and O atoms despite metallic conductivity above 80 K. This distortion relieves the magnetic frustration, facilitating magnetic order which in turn drives the metal--insulator transition. Our results suggest that the phase transition in Pb2CaOsO6 is spin-driven, and could be a rare example of a Slater transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetism-induced topological transition in EuAs3

The nature of the interaction between magnetism and topology in magnetic topological semimetals remains mysterious, but may be expected to lead to a variety of novel physics. We present $ab$ $initio$ band calculations, electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements on the magnetic semimetal EuAs$_3$, demonstrating a magnetism-induced topological transition from a topological nodal-line semimetal in the paramagnetic or the spin-polarized state to a topological massive Dirac metal in the antiferromagnetic (AFM) ground state at low temperature, featuring a pair of massive Dirac points, inverted bands and topological surface states on the (010) surface. Shubnikov-de Haas (SdH) oscillations in the AFM state identify nonzero Berry phase and a negative longitudinal magnetoresistance ($n$-LMR) induced by the chiral anomaly, confirming the topological nature predicted by band calculations. When magnetic moments are fully polarized by an external magnetic field, an unsaturated and extremely large magnetoresistance (XMR) of $\sim$ 2$\times10^5$ % at 1.8 K and 28.3 T is observed, likely arising from topological protection. Consistent with band calculations for the spin-polarized state, four new bands in quantum oscillations different from those in the AFM state are discerned, of which two are topologically protected. Nodal-line structures at the $Y$ point in the Brillouin zone (BZ) are proposed in both the spin-polarized and paramagnetic states, and the latter is proven by ARPES. Moreover, a temperature-induced Lifshitz transition accompanied by the emergence of a new band below 3 K is revealed. These results indicate that magnetic EuAs$_3$ provides a rich platform to explore exotic physics arising from the interaction of magnetism with topology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Non-Coulomb strong electron-hole binding in $Ta_2NiSe_5$ revealed by time- and angle-resolved photoemission spectroscopy

We reveal an ultrafast purely electronic phase transition in \TNS, which is a plausible excitonic insulator, after excited by an ultrafast infrared laser pulse. Specifically, the order parameter of the strong electron-hole binding shrinks with enhancing the pump pulse, and above a critical pump fluence, a photo-excited semimetallic state is experimentally identified with the absence of ultrafast structural transition. In addition, the bare valence and conduction bands and also the effective exciton binding energy in \TNS~are determined. These findings and detailed analysis suggest a bare nonequilibrium semimetallic phase in $Ta_2NiSe_5$ and the strong electron-hole binding cannot be exclusively driven by Coulomb interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Terahertz emission in the van der Waals magnet CrSiTe3

The van der Waals magnet CrSiTe3 (CST) has captured immense interest because it is capable of retaining the long-range ferromagnetic order even in its monolayer form, thus offering potential use in spintronic devices. Bulk CST crystal has inversion symmetry that is broken on the crystal surface. Here, by employing ultrafast terahertz (THz) emission spectroscopy and time resolved THz spectroscopy, the THz emission of the CST crystal was investigated, which shows a strong THz emission from the crystal surface under femtosecond (fs) pulse excitation at 800 nm. Theoretical analysis based on space symmetry of CST suggests the dominant role of shift current occurring on the surface with a thickness of a few quintuple layers in producing the THz emission, in consistence with the experimental observation that the emitted THz amplitude strongly depends on the azimuthal and pumping polarization angles. The present study offers a new efficient THz emitter as well as a better understanding of the nonlinear optical response of CST. It hopefully will open a window toward the investigation on the nonlinear optical response in the mono-/few-layer van der Waals crystals with low-dimensional magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The de Hass-van Alphen quantum oscillations in a three-dimensional Dirac semimetal TiSb2

We have used the de Hass-van Alphen (dHvA) effect to investigate the Fermi surface of high-quality crystalline TiSb2, which unveiled a nontrivial topologic nature by analyzing the dHvA quantum oscillations. Moreover, our analysis on the quantum oscillation frequencies associated with nonzero Berry phase when the magnetic field is parallel to both of the ab-plane and c-axis of TiSb2 finds that the Fermi surface topology has a three-dimensional (3D) feature. The results are supported by the first-principle calculations which revealed a symmetry-protected Dirac point appeared along the Γ-Z high symmetry line near the Fermi level. On the (001) surface, the bulk Dirac points are found to project onto the -Γ point with nontrivial surface states. Our finding will substantially enrich the family of 3D Dirac semimetals which are useful for topological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The de Hass-van Alphen quantum oscillations in BaSn3 superconductor with multiple Dirac fermions

By measuring the de Hass-van Alphen effect and calculating the electronic band structure, we have investigated the bulk Fermi surface of the BaSn3 superconductor with a transition temperature of ~ 4.4 K. Striking de Haas-van Alphen (dHvA) quantum oscillations are observed when the magnetic field B is perpendicular to both (100) and (001) planes. Our analysis unveiled nontrivial Berry phase imposed in the quantum oscillations when B is perpendicular to (100), with two fundamental frequencies at 31.5 T and 306.7 T, which likely arise from two corresponding hole pockets of the bands forming a type-II Dirac point. The results are supported by the ab initio calculations indicating a type-II Dirac point setting and tilting along the high symmetric K-H line of the Brillouin zone, about 0.13 eV above the Fermi level. Moreover, the calculations also revealed other two type-I Dirac points on the high symmetric Γ-A direction, but slightly far below the Fermi level. The results demonstrate BaSn3 as an excellent platform for the study of not only exotic properties of different types of Dirac fermions in a single material, but also the interplay between nontrivial topological states and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Angle-resolved photoemission spectroscopy study of crystal electric field in heavy fermion compound CePt2In7

The three-dimensional electronic structure and Ce 4f electrons of the heavy fermion superconductor CePt2In7 is investigated. Angle-resolved photoemission spectroscopy using variable photon energy establishes the existence of quasi-two and three dimensional Fermi surface topologies. Temperature-dependent 4d-4f on-resonance photoemission spectroscopies reveal that heavy quasiparticle bands begin to form at a temperature well above the characteristic (coherence) temperature T*. T* emergence may be closely related to crystal electric field splitting, particularly the low-lying heavy band formed by crystal electric field splitting.

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preprint2019arXiv

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state

High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontrivial electron Fermi pocket at the B point and a nontrivial hole Fermi pocket at the Γ point respectively in the Brillouin zone. However, calculations revealed one more electron pocket at the B point, which was not detected by the magnetotransport measurements, presumably due to the limited carrier momentum relaxation time. Angle dependent quantum oscillations by rotating the sample with respect to the magnetic field revealed clear changes in the two fundamental frequencies, indicating anisotropic electronic Fermi pockets. The ab initio calculations gave the topological Z2 invariants of (1; 100) and revealed a single Dirac cone on the (1 0 -1) surface at the X point with helical spin texture at a constant-energy contour, suggesting a strong topological insulator state. The results demonstrate TaSe3 an excellent platform to study the interplay between topological phase and superconductivity and a promising system for the exploration of topological superconductivity.

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preprint2019arXiv

Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states

Combination of different nontrivial topological states in a single material is capable of realizing multiple functionalities and exotic physics, but such materials are still very sparse. We report herein the results of magnetotransport measurements and ab initio calculations on single crystalline CaAl2Si2 semimetal. The transport properties could be well understood in connection with the two-band model, agreeing well with the theoretical calculations indicating four main sheets of Fermi surface consisting of three hole pockets centered at the Γ point and one electron pocket centered at the M point in the Brillouin zone. The single fundamental frequency imposed in the quantum oscillations of magnetoresistance corresponds to the electron Fermi pocket. Without spin-orbit coupling (SOC), the ab initio calculations suggest CaAl2Si2 as a system hosting a topological nodal-line setting around the Γ point in the Brillouin zone close to the Fermi level. Once including the SOC, the fragile nodal-line will be gapped and a pair of Dirac points emerge along the high symmetric Γ-A direction, which is about 1.22 eV below the Fermi level. The SOC can also induce a topological insulator state along the Γ-A direction with a gap of about 3 meV. The results demonstrate CaAl2Si2 as an excellent platform for the study of novel topological physics with multiple topological states.

0 citations0 reviewsNo code linkedOpen access