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Source author record

Xiaofang Zhai

Xiaofang Zhai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conphysics.chem-phphysics.optics

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Published work

6 published item(s)

preprint2022arXiv

Low-frequency Phonon at Perovskite Oxide Interface Studied by Surface-specific Nonlinear Terahertz Spectroscopy

The low-frequency collective excitations, which often occur in the terahertz or multi-terahertz spectral region, play an essential role in many novel emergent phenomena. Despite numerous studies in the bulk, detection of such excitations at interfaces remains challenging owing to the lack of feasible experimental techniques. Here, we show that interfacial low-frequency modes can be characterized using surface-specific nonlinear terahertz spectroscopy. This technique uses intra-pulse difference frequency mixing (DFM) process that can extend the second-order optical spectroscopy to the terahertz range. As a demonstration, the surface phonon of SrTiO3(001) at 2.8 THz was successfully measured. This surface polarization originates from the excess of oxygen vacancies or charge transfer at the interface. We have also developed an analytical procedure for remote measurement of the interfacial potential of complex oxides in a practical environment. Our method offers new opportunities for in situ studies of the low-frequency excitations at interfaces in broad disciplines.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180 degrees spin switching between states. We demonstrate a novel eightfold anisotropy in magnetic SrRuO3 monolayers by inducing a spin reorientation in (SrRuO3)1/(SrTiO3)N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial <001> direction (N = 1 and 2) to eightfold <111> directions (N = 3, 4 and 5). This eightfold anisotropy enables 71 and 109 degrees spin switching in SrRuO3 monolayers, analogous to 71 and 109 degrees polarization switching in ferroelectric BiFeO3. First-principle calculations reveal that increasing the SrTiO3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multi-state device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of pseudogap in SnSe2 atomic layers grown on graphite

Superconducting metal dichalcogenides (MDCs) present several similarities to the other layered superconductors like cuprates. The superconductivity in atomically thin MDCs has been demonstrated by recent experiments, however, the investigation of the superconductivity intertwined with other orders are scarce. Investigating the pseudogap in atomic layers of MDCs may help to understand the superconducting mechanism for these true two-dimensional (2D) superconducting systems. Herein we report a pseudogap opening in the tunneling spectra of thin layers of SnSe2 epitaxially grown on highly oriented pyrolytic graphite (HOPG) with scanning tunneling microscopy/spectroscopy (STM/STS). A significant V-shaped pseudogap was observed to open near the Fermi level (EF) in the STS. And at elevated temperatures, the gap gradually evolves to a shallow dip. Our experimental observations provide direct evidence of a pseudogap state in the electron-doped SnSe2 atomic layers on the HOPG surface, which may stimulate further exploration of the mechanism of superconductivity at 2D limit in MDCs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bilayer Graphene Growth via a Penetration Mechanism

From both fundamental and technical points of view, a precise control of the layer number of graphene samples is very important. To reach this goal, atomic scale mechanisms of multilayer graphene growth on metal surfaces should be understood. Although it is a geometrically favorable pathway to transport carbon species to interface and then form a new graphene layer there, penetration of a graphene overlayer is not a chemically straightforward process. In this study, the possibility of different active species to penetrate a graphene overlayer on Cu(111) surface is investigated based on first principles calculations. It is found that carbon atom penetration can be realized via an atom exchange process, which leads to a new graphene growth mechanism. Based on this result, a bilayer graphene growth protocol is proposed to obtain high quality samples. Such a penetration possibility also provides a great flexibility for designed growth of graphene nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.

0 citations0 reviewsNo code linkedOpen access