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Source author record

Changgan Zeng

Changgan Zeng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

8 published item(s)

preprint2022arXiv

Josephson-Coulomb drag effect between graphene and LaAlO3/SrTiO3 interfacial superconductor

Coulomb drag refers to the phenomenon that a charge current in one electronic circuit induces a responsive current in a neighboring circuit solely through Coulomb interactions. For conventional interactions between fermionic particles such as electrons, the as-induced drag current in the passive layer is orders of magnitude weaker than the active current due to strong dielectric screening effect between the two. Here we propose a 'super' Coulomb drag effect between an active normal conductor and a passive superconductor of Josephson junction arrays, whereby the passive current can greatly exceed the active. The drag force originates from the interactions between the substantially enhanced dynamical quantum fluctuations of the superconducting phases in the passive layer and the normal electrons in the active layer. We demonstrate this effect in the devices composed of monolayer graphene and LaAlO3/SrTiO3 heterointerface, an inherently non-uniform superconductor described by Josephson junction arrays. Remarkable drag signal is observed in the superconducting transition regime of the LaAlO3/SrTiO3 interface, with its sign independent of the carrier type in the graphene layer. The estimated passive-to-active ratio can reach about 0.3 at the optimal gate voltage and the temperature dependence follows that of the typical Josephson energy between superconducting puddles. Strikingly, the ratio ought to be as large as 10^5 at zero temperature by theoretical extrapolation. From engineering perspective, our device may work as current or voltage transformers, and the drag mechanism lays the foundation for synchronizing Josephson-junction-array-based terahertz radiators.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moiré pattern that replicates the Moiré pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ab-initio Studies of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe Superconductors: Revealing the Dual Roles of Fe$_{0.2}$ in Structural Stability and Charge Transfer

The recently discovered (Li$_{0.8}$Fe$_{0.2}$)OHFeSe superconductor provides a new platform for exploiting the microscopic mechanisms of high-$T_c$ superconductivity in FeSe-derived systems. Using density functional theory calculations, we first show that substitution of Li by Fe not only significantly strengthens the attraction between the (Li$_{0.8}$Fe$_{0.2}$)OH spacing layers and the FeSe superconducting layers along the \emph{c} axis, but also minimizes the lattice mismatch between the two in the \emph{ab} plane, both favorable for stabilizing the overall structure. Next we explore the electron injection into FeSe from the spacing layers, and unambiguously identify the Fe$_{0.2}$ components to be the dominant atomic origin of the dramatically enhanced interlayer charge transfer. We further reveal that the system strongly favors collinear antiferromagnetic ordering in the FeSe layers, but the spacing layers can be either antiferromagnetic or ferromagnetic depending on the Fe$_{0.2}$ spatial distribution. Based on these understandings, we also predict (Li$_{0.8}$Co$_{0.2}$)OHFeSe to be structurally stable with even larger electron injection and potentially higher $T_c$.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)

It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4x1 structure is only slightly compressive, while that of the low-temperature insulating 8x2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications in understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single-Valley Engineering in Graphene Superlattices

The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator phases. Here we propose a way to engineer a chiral single-valley metallic phase with quadratic crossover in a honeycomb lattice through tailored \sqrt{3}N *\sqrt{3}N or 3N *3N superlattices. The possibility of tuning valley-polarization via pseudo-Zeeman field and the emergence of Dresselhaus-type valley-orbit coupling are proposed in adatom decorated graphene superlattices. Such valley manipulation mechanisms and metallic phase can also find applications in honeycomb photonic crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Universal $\sqrt{2}\times\sqrt{2}$ structure and short-range charge order at the surfaces of BaFe$_{2-x}$Co$_{x}$As$_{2}$ compounds with various Co doping levels

The structure and electronic order at the cleaved (001) surfaces of the newly-discovered pnictide superconductors BaFe$_{2-x}$Co$_{x}$As$_{2}$ with x ranging from 0 to 0.32 are systematically investigated by scanning tunneling microscopy. A $\sqrt{2}\times\sqrt{2}$ surface structure is revealed for all the compounds, and is identified to be Ba layer with half Ba atoms lifted-off by combination with theoretical simulation. A universal short-range charge order is observed at this $\sqrt{2}\times\sqrt{2}$ surface associated with an energy gap of about 30 meV for all the compounds.

0 citations0 reviewsNo code linkedOpen access