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Changgan Zeng

Changgan Zeng contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Josephson-Coulomb drag effect between graphene and LaAlO3/SrTiO3 interfacial superconductor

Coulomb drag refers to the phenomenon that a charge current in one electronic circuit induces a responsive current in a neighboring circuit solely through Coulomb interactions. For conventional interactions between fermionic particles such as electrons, the as-induced drag current in the passive layer is orders of magnitude weaker than the active current due to strong dielectric screening effect between the two. Here we propose a 'super' Coulomb drag effect between an active normal conductor and a passive superconductor of Josephson junction arrays, whereby the passive current can greatly exceed the active. The drag force originates from the interactions between the substantially enhanced dynamical quantum fluctuations of the superconducting phases in the passive layer and the normal electrons in the active layer. We demonstrate this effect in the devices composed of monolayer graphene and LaAlO3/SrTiO3 heterointerface, an inherently non-uniform superconductor described by Josephson junction arrays. Remarkable drag signal is observed in the superconducting transition regime of the LaAlO3/SrTiO3 interface, with its sign independent of the carrier type in the graphene layer. The estimated passive-to-active ratio can reach about 0.3 at the optimal gate voltage and the temperature dependence follows that of the typical Josephson energy between superconducting puddles. Strikingly, the ratio ought to be as large as 10^5 at zero temperature by theoretical extrapolation. From engineering perspective, our device may work as current or voltage transformers, and the drag mechanism lays the foundation for synchronizing Josephson-junction-array-based terahertz radiators.

preprint2011arXiv

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

preprint2011arXiv

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.