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Source author record

J. G. Hou

J. G. Hou appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-phcond-mat.dis-nncond-mat.quant-gascond-mat.supr-conphysics.optics

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Published work

13 published item(s)

preprint2019arXiv

Visually Constructing the Chemical Structure of a Single Molecule by Scanning Raman Picoscopy

The strong spatial confinement of a nanocavity plasmonic field has made it possible to visualize the inner structure of a single molecule and even to distinguish its vibrational modes in real space. With such ever-improved spatial resolution, it is anticipated that full vibrational imaging of a molecule could be achieved to reveal molecular structural details. Here we demonstrate full Raman images of individual vibrational modes on the Ångström level for a single Mg-porphine molecule, revealing distinct characteristics of each vibrational mode in real space. Furthermore, by exploiting the underlying interference effect and Raman fingerprint database, we propose a new methodology for structural determination, coined as scanning Raman picoscopy, to show how such ultrahigh-resolution spectromicroscopic vibrational images can be used to visually assemble the chemical structure of a single molecule through a simple Lego-like building process.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials

Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evidence of Photocatalytic Dissociation of Water on TiO2 with Atomic Resolution

Photocatalytic water splitting reaction on TiO2 surface is one of the fundamental issues that bears significant implication in hydrogen energy technology and has been extensively studied. However, the existence of the very first reaction step, the direct photo-dissociation of water, has been disregarded. Here, we provide unambiguously experimental evidence to demonstrate that adsorbed water molecules on reduced rutile TiO2(110)-1\times1 surface can be dissociated under UV irradiation using low temperature scanning tunneling microscopy. It is identified that a water molecule at fivefold coordinated Ti (Ti5c) site can be photocatalytically dissociated, resulting in a hydroxyl at Ti5c and another hydroxyl at bridge oxygen row. Our findings reveal a missing link in the photocatalytic water splitting reaction chain, which greatly contribute to the detailed understanding of underlying mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Vacancy Induced Splitting of Dirac Nodal Point in Graphene

We investigate the vacancy effects on quasiparticle band structure of graphene near the Dirac point. It is found that each Dirac nodal point splits into two new nodal points due to the coherent scattering among vacancies. The splitting energy between the two nodal points is proportional to the square root of vacancy concentration. In addition, an extra dispersionless impurity band of zero energy due to particle-hole symmetry is found. Our theory offers an excellent explanation to the recent experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Accurate evaluation of the Green's function of disordered graphenes

An accurate simulation of Green's function and self-energy function of non-interacting electrons in disordered graphenes are performed. Fundamental physical quantities such as the elastic relaxation time τe, the phase velocity vp, and the group velocity vg are evaluated. New features around the Dirac point are revealed, showing hints that multi-scattering induced hybridization of Bloch states plays an important role in the vicinity of the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nearly Free Electron States in Graphene Nanoribbon Superlattices

Nearly free electron (NFE) state is an important kind of unoccupied state in low dimensional systems. Although it is intensively studied, a clear picture on its physical origin and its response behavior to external perturbations is still not available. Our systematic first-principles study based on graphene nanoribbon superlattices suggests that there are actually two kinds of NFE states, which can be understood by a simple Kronig-Penney potential model. An atom-scattering-free NFE transport channel can be obtained via electron doping, which may be used as a conceptually new field effect transistor.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Topological Transition of Graphene from Quantum Hall Metal to Quantum Hall Insulator at $ν=0$

The puzzle of recently observed insulating phase of graphene at filling factor $ν=0$ in high magnetic field quantum Hall (QH) experiments is investigated. We show that the magnetic field driven Peierls-type lattice distortion (due to the Landau level degeneracy) and random bond fluctuations compete with each other, resulting in a transition from a QH-metal state at relative low field to a QH-insulator state at high enough field at $ν=0$. The critical field that separates QH-metal from QH-insulator depends on the bond fluctuation. The picture explains well why the field required for observing the insulating phase is lower for a cleaner sample.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Universal $\sqrt{2}\times\sqrt{2}$ structure and short-range charge order at the surfaces of BaFe$_{2-x}$Co$_{x}$As$_{2}$ compounds with various Co doping levels

The structure and electronic order at the cleaved (001) surfaces of the newly-discovered pnictide superconductors BaFe$_{2-x}$Co$_{x}$As$_{2}$ with x ranging from 0 to 0.32 are systematically investigated by scanning tunneling microscopy. A $\sqrt{2}\times\sqrt{2}$ surface structure is revealed for all the compounds, and is identified to be Ba layer with half Ba atoms lifted-off by combination with theoretical simulation. A universal short-range charge order is observed at this $\sqrt{2}\times\sqrt{2}$ surface associated with an energy gap of about 30 meV for all the compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Electronic Structure in Gapped Graphene with Coulomb Potential

In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Quantum Dot in Z-shaped Graphene Nanoribbon

Stimulated by recent advances in isolating graphene, we discovered that quantum dot can be trapped in Z-shaped graphene nanoribbon junciton. The topological structure of the junction can confine electronic states completely. By varying junction length, we can alter the spatial confinement and the number of discrete levels within the junction. In addition, quantum dot can be realized regardless of substrate induced static disorder or irregular edges of the junction. This device can be used to easily design quantum dot devices. This platform can also be used to design zero-dimensional functional nanoscale electronic devices using graphene ribbons.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Electronic Structure of Bilayer Graphene: A Real-space Green's Function Study

In this paper, a real-space analytical expression for the free Green's function (propagator) of bilayer graphene is derived based on the effective-mass approximation. Green's function displays highly spatial anisotropy with three-fold rotational symmetry. The calculated local density of states (LDOS) of a perfect bilayer graphene produces the main features of the observed scanning tunneling microscopy (STM) images of graphite at low bias voltage. Some predicted features of the LDOS can be verified by STM measurements. In addition, we also calculate the LDOS of bilayer graphene with vacancies by using the multiple-scattering theory (scatterings are localized around the vacancy of bilayer graphene). We observe that the interference patterns are determined mainly by the intrinsic properties of the propagator and the symmetry of the vacancies.

0 citations0 reviewsNo code linkedOpen access